公开(公告)号：US06576484B1

公开(公告)日：2003-06-10

申请号：US09864668

申请日：2001-05-23

申请人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

发明人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone

IPC分类号： H01L2100

CPC分类号： H01L23/3735 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor analysis is enhanced using a system and method for improving the heat-dissipation characteristics of a semiconductor die. According to an example embodiment of the present invention, a flip-chip integrated circuit die having circuitry in a circuit side opposite a back side is formed having a back side including a thermal conductivity enhancing material. The thermal conductivity enhancing material improves the heat dissipating characteristics of the die during operation and testing and helps to reduce or prevent overheating. An epitaxial layer of silicon is formed in the back side, and circuitry is constructed in the epitaxial layer. Pre-existing circuitry on the circuit side and the newly formed circuitry in the back side are electrically coupled. The back side circuitry is operated in conjunction with the circuit side circuitry during testing and operation, and is useful, for example, for replacing defective circuitry, modifying circuit operation, and/or providing stimuli to the circuit side circuitry. The thermal conductivity enhancing material dissipates the heat generated by the circuitry and reduces the risk of a thermal related breakdown of the die. This improves the ability to analyze the die under normal and above normal operating temperatures without necessarily causing a failure in the die.

摘要翻译： 使用用于提高半导体管芯的散热特性的系统和方法来增强半导体分析。 根据本发明的示例性实施例，形成具有在后侧相反的电路侧中的电路的倒装芯片集成电路管芯，其背面包括导热性增强材料。 导热性提高材料提高了操作和测试期间模具的散热特性，有助于减少或防止过热。 在外侧形成硅的外延层，在外延层中构成电路。 电路侧的预先存在的电路和后侧的新形成的电路电耦合。 在测试和操作期间，背面电路与电路侧电路一起操作，并且例如用于替换有缺陷的电路，修改电路操作和/或向电路侧电路提供刺激是有用的。 热导率增强材料消散了电路产生的热量，并降低了模具的热相关破坏的风险。 这提高了在正常和高于正常操作温度下分析模具的能力，而不一定导致模具故障。

公开(公告)号：US06549022B1

公开(公告)日：2003-04-15

申请号：US09586505

申请日：2000-06-02

申请人： Edward I. Cole, Jr. ,  Paiboon Tangyunyong ,  Charles F. Hawkins ,  Michael R. Bruce ,  Victoria J. Bruce ,  Rosalinda M. Ring

发明人： Edward I. Cole, Jr. ,  Paiboon Tangyunyong ,  Charles F. Hawkins ,  Michael R. Bruce ,  Victoria J. Bruce ,  Rosalinda M. Ring

IPC分类号： G01R3102

CPC分类号： G01R31/308

摘要： An apparatus and method are presented for identifying and mapping functional failures in an integrated circuit (IC) due to timing errors therein based on the generation of functional failures in the IC. This is done by providing a set of input test vectors to the IC and adjusting one or more: of the IC voltage, temperature or clock frequency; the rate at which the test vectors are provided to the IC; or the power level of a focused laser beam used to probe the IC and produce localized heating which changes the incidence of the functional failures in the IC which can be sensed for locating the IC circuit elements responsible for the functional failures. The present invention has applications for optimizing the design and fabrication of ICs, for failure analysis, and for qualification or validation testing of ICs.

摘要翻译： 提出了一种基于IC中的功能故障的产生由于其中的定时误差来识别和映射集成电路（IC）中的功能故障的装置和方法。 这通过向IC提供一组输入测试向量并且调整IC电压，温度或时钟频率的一个或多个来完成; 将测试向量提供给IC的速率; 或用于探测IC并产生局部加热的聚焦激光束的功率电平，其改变IC中的功能故障的发生率，其可被感测用于定位负责功能故障的IC电路元件。 本发明具有优化IC的设计和制造，故障分析以及IC的鉴定或验证测试的应用。

公开(公告)号：US06375347B1

公开(公告)日：2002-04-23

申请号：US09654823

申请日：2000-09-05

申请人： Victoria J. Bruce ,  Michael R. Bruce

发明人： Victoria J. Bruce ,  Michael R. Bruce

IPC分类号： G01N2572

CPC分类号： G01N25/72 ,  G01J5/0003 ,  G01K11/00

摘要： Methods for analyzing temperature characteristics of an integrated circuit. In one embodiment, a beam of laser light is directed at the back side of an integrated circuit. The intensity level of laser light reflected from the integrated circuit is measured and compared to a reference intensity level. The magnitude of the difference between the reference intensity level and the intensity level of the reflected laser light is indicative of a temperature characteristic of the integrated circuit.

摘要翻译： 分析集成电路温度特性的方法。 在一个实施例中，激光束指向集成电路的背面。 测量从集成电路反射的激光的强度水平，并将其与基准亮度水平进行比较。 基准亮度电平与反射激光的强度电平之差的大小表示集成电路的温度特性。

公开(公告)号：US06350982B1

公开(公告)日：2002-02-26

申请号：US09383725

申请日：1999-08-26

申请人： Victoria J. Bruce ,  Michael R. Bruce

发明人： Victoria J. Bruce ,  Michael R. Bruce

IPC分类号： H01L3100

CPC分类号： H01L31/03046 ,  H01L31/0304 ,  H01L31/108 ,  Y02E10/544

摘要： According to one example embodiment, a latch-up condition in a semiconductor device is detected using a method involving use of a laser beam to scan through the backside of the semiconductor device and to ascertain an intensity threshold that is known to cause latch-up conditions. The intensity of the beam is altered and applied to designated regions within the semiconductor device to create latch-up at certain regions but not other regions. A latch-up condition present at a designated region is then detected using conventional microscopy equipment.

摘要翻译： 根据一个示例性实施例，使用包括使用激光束扫描穿过半导体器件的背面并且确定已知导致闩锁状态的强度阈值的方法来检测半导体器件中的闩锁状态 。 改变光束的强度并将其施加到半导体器件内的指定区域，以在某些区域而不是其它区域产生闩锁。 然后使用传统的显微镜设备检测存在于指定区域的闭锁状态。