Multilevel semiconductor device and structure with image sensors and wafer bonding

    公开(公告)号:US11605663B2

    公开(公告)日:2023-03-14

    申请号:US17951545

    申请日:2022-09-23

    Abstract: An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the first level includes a plurality of landing pads, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

    3D micro display semiconductor device and structure

    公开(公告)号:US11374042B1

    公开(公告)日:2022-06-28

    申请号:US17699099

    申请日:2022-03-19

    Abstract: A 3D micro display, the 3D micro display including: a first level including a first single crystal layer, the first single crystal layer includes at least one LED driving circuit; a second level including a first plurality of light emitting diodes (LEDs), the first plurality of LEDs including a second single crystal layer, where the second level is disposed on top of the first level, where the second level includes at least ten individual first LED pixels; and a bonding structure, where the bonding structure includes oxide to oxide bonding.

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