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    DEVICES INCLUDING AT LEAST ONE MULTILAYER ADHESION LAYER
    71.
    发明申请
    DEVICES INCLUDING AT LEAST ONE MULTILAYER ADHESION LAYER 审中-公开
    设备包括至少一个多层粘合层

    公开(公告)号：US20160284365A1

    公开(公告)日：2016-09-29

    申请号：US15073396

    申请日：2016-03-17

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Justin Brons ,  Tong Zhao ,  Yuhang Cheng ,  Dimitar V. Dimitrov

    IPC: G11B5/147

    CPC classification number: G11B5/314 ,  G11B5/3133 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT), the NFT having at least one external surface; and at least one multilayer adhesion layer positioned on at least a portion of the at least one external surface, the multilayer adhesion layer including a first layer and a second layer, with the second layer being in contact with the portion of the at least one external surface of the NFT, the first layer including: yttrium (Y), scandium (Sc), zirconium (Zr), hafnium (Hf), silicon (Si), boron (B), tantalum (Ta), barium (Ba), aluminum (Al), titanium (Ti), niobium (Nb), calcium (Ca), beryllium (Be), strontium (Sr), magnesium (Mg), lithium (Li), or combinations thereof; and the second layer including: lanthanum (La), boron (B), lutetium (Lu), aluminum (Al), deuterium (D), cerium (Ce), uranium (U), praseodymium (Pr), yttrium (Y), silicon (Si), iridium (Ir), carbon (C), thorium (Th), scandium (Sc), titanium (Ti), vanadium (V), phosphorus (P), barium (Ba), europium (Eu), or combinations thereof.

    Abstract translation: 包括近场换能器（NFT）的装置，所述NFT具有至少一个外表面; 以及位于所述至少一个外表面的至少一部分上的至少一个多层粘合层，所述多层粘合层包括第一层和第二层，所述第二层与所述至少一个外部表面的所述部分接触 第一层包括：钇（Y），钪（Sc），锆（Zr），铪（Hf），硅（Si），硼（B），钽（Ta），钡（Ba） 铝（Al），钛（Ti），铌（Nb），钙（Ca），铍（Be），锶（Sr），镁（Mg），锂（Li） 第二层包括：镧（La），硼（B），镥（Lu），铝（Al），氘（D），铈（Ce），铀（U），镨（Pr） ，硅（Si），铱（Ir），碳（C），钍（Th），钪（Sc），钛（Ti），钒（V），磷（P），钡（Ba） ，或其组合。

    DEVICES INCLUDING A GAS BARRIER LAYER
    73.
    发明申请
    DEVICES INCLUDING A GAS BARRIER LAYER 审中-公开

    公开(公告)号：US20160035379A1

    公开(公告)日：2016-02-04

    申请号：US14879107

    申请日：2015-10-09

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Yuhang Cheng ,  Scott Franzen ,  Ed F. Rejda ,  Kurt W. Wierman ,  Michael Allen Seigler

    IPC: G11B5/40 ,  G11B5/31

    CPC classification number: G11B5/40 ,  G11B5/3106 ,  G11B5/3136 ,  G11B5/314 ,  G11B5/3163 ,  G11B5/486 ,  G11B5/4866 ,  G11B2005/0021

    Abstract: Devices that include a near field transducer (NFT); a gas barrier layer positioned on at least a portion of the NFT; and a wear resistance layer positioned on at least a portion of the gas barrier layer wherein the gas barrier layer includes tantalum oxide (TaO), titanium oxide (TiO), chromium oxide (CrO), silicon oxide (SiO), aluminum oxide (AlO), titanium oxide (TiO), zirconium oxide (ZrO), yttrium oxide (YO), magnesium oxide (MgO), beryllium oxide (BeO), niobium oxide (NbO), hafnium oxide (HfO), vanadium oxide (VO), strontium oxide (SrO), or combinations thereof; silicon nitride (SiN), aluminum nitride (Al), boron nitride (BN), titanium nitride (TiN), zirconium nitride (ZrN), niobioum nitride (NbN), hafnium nitride (HfN), chromium nitride (CrN), or combinations thereof silicon carbide (SiC), titanium carbide (TiC), zirconium carbide (ZrC), niobioum carbide (NbC), chromium carbide (CrC), vanadium carbide (VC), boron carbide (BC), or combinations thereof or combinations thereof.

    PEG HEIGHT OF NEAR-FIELD TRANSDUCERS
    74.
    发明申请
    PEG HEIGHT OF NEAR-FIELD TRANSDUCERS 有权
    近场传感器的PEG高度

    公开(公告)号：US20150063087A1

    公开(公告)日：2015-03-05

    申请号：US14016441

    申请日：2013-09-03

    Applicant: Seagate Technology LLC

    Inventor： Chubing Peng ,  Nils Gokemeijer ,  Yuhang Cheng ,  Kaspar Ko ,  Amit Sharma

    IPC: G11B5/48

    CPC classification number: G11B5/4866 ,  G11B5/314 ,  G11B5/6088 ,  G11B13/08 ,  G11B2005/0021

    Abstract: A method is provided for characterizing the peg region of a near-field transducer incorporated into a write head of a HAMR magnetic recorder. The method includes providing excitation radiation to one or more near-field transducers. The near-field transducers include an enlarged disk region and a peg region at least partially in contact with the enlarged disk region. The method further includes filtering output radiation from the near-field transducers by passing a portion of photoluminescent radiation emitted by the near-field transducers in response to the excitation radiation and substantially blocking the excitation radiation transmitted by the near-field transducers. The method also includes detecting the portion of photoluminescent radiation and characterizing the peg region of at least one of the plurality of near-field transducers.

    Abstract translation: 提供了一种用于表征并入到HAMR磁记录器的写入头中的近场换能器的钉区的方法。 该方法包括向一个或多个近场换能器提供激发辐射。 近场换能器包括放大的盘区域和至少部分地与放大的盘区域接触的钉区域。 该方法还包括通过使由近场换能器发射的光致发光辐射的一部分响应于激发辐射而过滤来自近场换能器的输出辐射并且基本上阻挡由近场换能器传输的激发辐射。 该方法还包括检测光致发光辐射的部分并表征多个近场换能器中的至少一个的束区。

    Peg height of near-field transducers
    76.
    发明授权
    Peg height of near-field transducers 有权
    近场传感器的高度

    公开(公告)号：US08958271B1

    公开(公告)日：2015-02-17

    申请号：US14016441

    申请日：2013-09-03

    Applicant: Seagate Technology LLC

    Inventor： Chubing Peng ,  Nils Gokemeijer ,  Yuhang Cheng ,  Kaspar Ko ,  Amit Sharma

    IPC: G11B11/00 ,  G11B5/48 ,  G11B5/00

    CPC classification number: G11B5/4866 ,  G11B5/314 ,  G11B5/6088 ,  G11B13/08 ,  G11B2005/0021

    Abstract: A method is provided for characterizing the peg region of a near-field transducer incorporated into a write head of a HAMR magnetic recorder. The method includes providing excitation radiation to one or more near-field transducers. The near-field transducers include an enlarged disk region and a peg region at least partially in contact with the enlarged disk region. The method further includes filtering output radiation from the near-field transducers by passing a portion of photoluminescent radiation emitted by the near-field transducers in response to the excitation radiation and substantially blocking the excitation radiation transmitted by the near-field transducers. The method also includes detecting the portion of photoluminescent radiation and characterizing the peg region of at least one of the plurality of near-field transducers.

    Abstract translation: 提供了一种用于表征并入到HAMR磁记录器的写入头中的近场换能器的钉区的方法。 该方法包括向一个或多个近场换能器提供激发辐射。 近场换能器包括放大的盘区域和至少部分地与放大的盘区域接触的钉区域。 该方法还包括通过使由近场换能器发射的光致发光辐射的一部分响应于激发辐射而过滤来自近场换能器的输出辐射并且基本上阻挡由近场换能器传输的激发辐射。 该方法还包括检测光致发光辐射的部分并表征多个近场换能器中的至少一个的束区。

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