公开(公告)号：US08837232B2

公开(公告)日：2014-09-16

申请号：US13940493

申请日：2013-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue ,  Kiyoshi Kato

IPC: G11C7/00

CPC classification number: G11C7/00 ,  G11C11/403 ,  G11C11/4087 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225

Abstract: An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.

Abstract translation: 目的是提供具有新颖结构的半导体器件，其即使在不提供电力且具有无限数量的写周期的情况下也可以保存存储的数据。 使用包括诸如氧化物半导体的宽带隙半导体的存储单元形成半导体器件。 半导体器件包括具有输出低于用于从存储单元读取数据的参考电位的电位的功能的电位变化电路。 当使用允许充分降低包含在存储单元中的晶体管的截止电流的宽带隙半导体时，可以提供能够长期保存数据的半导体器件。

公开(公告)号：US20130301367A1

公开(公告)日：2013-11-14

申请号：US13940493

申请日：2013-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue ,  Kiyoshi Kato

IPC: G11C7/00

CPC classification number: G11C7/00 ,  G11C11/403 ,  G11C11/4087 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225

Abstract: An object is to provide a semiconductor device with a novel structure, which can hold stored data even when power is not supplied and which has an unlimited number of write cycles. The semiconductor device is formed using a memory cell including a wide band gap semiconductor such as an oxide semiconductor. The semiconductor device includes a potential change circuit having a function of outputting a potential lower than a reference potential for reading data from the memory cell. When the wide band gap semiconductor which allows a sufficient reduction in off-state current of a transistor included in the memory cell is used, a semiconductor device which can hold data for a long period can be provided.

Abstract translation: 目的是提供具有新颖结构的半导体器件，其即使在不提供电力且具有无限数量的写周期的情况下也可以保存存储的数据。 使用包括诸如氧化物半导体的宽带隙半导体的存储单元形成半导体器件。 半导体器件包括具有输出低于用于从存储单元读取数据的参考电位的电位的功能的电位变化电路。 当使用允许充分降低包含在存储单元中的晶体管的截止电流的宽带隙半导体时，可以提供能够长期保存数据的半导体器件。