公开(公告)号：US20190019689A1

公开(公告)日：2019-01-17

申请号：US16135178

申请日：2018-09-19

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide KIHARA ,  Toru HISAMATSU ,  Masanobu HONDA

IPC分类号： H01L21/311 ,  H01L21/033 ,  H01L21/66 ,  H01L21/324

摘要： In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.

公开(公告)号：US20180158684A1

公开(公告)日：2018-06-07

申请号：US15873189

申请日：2018-01-17

申请人： TOKYO ELECTRON LIMITED

发明人： Yoshihide KIHARA ,  Toru HISAMATSU

IPC分类号： H01L21/033 ,  H01L21/3213 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L21/311

摘要： A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched.