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公开(公告)号：US20240355589A1
公开(公告)日：2024-10-24
申请号：US18757575
申请日：2024-06-28
发明人： Koki MUKAIYAMA , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J2237/334
摘要： An etching method includes: (a) providing a substrate including an organic film and a mask on the organic film, (b) etching the organic film by a first plasma generated from a first processing gas containing an oxygen-containing gas to form a recess in the organic film, and (c) after (b), exposing the recess to a second plasma generated from a second processing gas containing a tungsten-containing gas.
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公开(公告)号：US20240203698A1
公开(公告)日：2024-06-20
申请号：US18390221
申请日：2023-12-20
发明人： Ryo MATSUBARA , Koki MUKAIYAMA , Maju TOMURA , Yoshihide KIHARA , Satoshi OHUCHIDA , Takuto KIKUCHI
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J2237/334
摘要： Provided is an etching method that includes: (a) preparing a substrate, the substrate including a first region and a second region below the first region, the first region containing a first material and having at least one opening, the second region containing a second material that is different from the first material and contains silicon; and (b) etching the second region through the at least one opening by using a plasma generated from a processing gas containing a fluorine containing gas and a CxHyClz (x and y are each an integer of 0 or more, x+y≥1, and z is an integer of 1 or more) gas.
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3.发明公开公开(公告)号：US20240006168A1
公开(公告)日：2024-01-04
申请号：US18369219
申请日：2023-09-18
发明人： Satoshi OHUCHIDA , Koki MUKAIYAMA , Yusuke WAKO , Maju TOMURA , Yoshihide KIHARA
CPC分类号： H01J37/32724 , H01L21/0206 , H01L21/31138 , B08B5/00 , B08B13/00 , B08B3/08 , H01L21/31144 , H01J2237/334
摘要： A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
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公开(公告)号：US20230307243A1
公开(公告)日：2023-09-28
申请号：US18124593
申请日：2023-03-22
发明人： Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/3065 , H01L21/311 , H01J37/32
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/31144 , H01J37/32449 , H01J2237/334
摘要： An etching method includes: (a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film in a chamber of a plasma processing apparatus, and (b) etching the silicon-containing film by generating plasma from a processing gas containing HF gas, and PClaFb gas (each of a and b is an integer of 1 or more) or PCcHdFe gas (c is an integer of 0 or more, and each of d and e is an integer of 1 or more), in the chamber.
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公开(公告)号：US20230215700A1
公开(公告)日：2023-07-06
申请号：US18121611
申请日：2023-03-15
发明人： Kae KUMAGAI , Motoi TAKAHASHI , Ryutaro SUDA , Maju TOMURA , Yoshihide KIHARA , Takatoshi ORUI
CPC分类号： H01J37/32449 , H01J37/32715 , H01J37/32798 , H01L21/02164 , H01L21/0217 , H01J37/32082 , H01J37/32458 , H01J2237/334
摘要： A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.
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公开(公告)号：US20230135998A1
公开(公告)日：2023-05-04
申请号：US17978558
申请日：2022-11-01
IPC分类号： H01J37/32 , H01L21/311
摘要： A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CxFy gas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.
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公开(公告)号：US20210202233A1
公开(公告)日：2021-07-01
申请号：US17128215
申请日：2020-12-21
发明人： Tomohiko NIIZEKI , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/02 , H01L21/3065 , C23C16/455 , C23C16/50 , C23C16/52 , H01L21/67
摘要： A substrate processing method suppresses a shape abnormality of a pattern formed on a substrate. The substrate processing method executed by a substrate processing apparatus includes step a), step b), and step c). The step a) is a step of providing a substrate including an etching target film and a mask layer formed on the etching target film in which the mask layer has an opening. The step b) is a step of forming a protective film on an upper portion of an opening of the mask. The step c) is a step of etching the mask while suppressing a variation of an opening dimension of the upper portion of the opening by the protective film, and varying a dimension of a lower portion of the opening not covered by the protective film.
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公开(公告)号：US20200279757A1
公开(公告)日：2020-09-03
申请号：US16804807
申请日：2020-02-28
发明人： Sho KUMAKURA , Hironari SASAGAWA , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/67 , H01L21/033 , H01L21/027 , C23C16/46 , C23C16/02 , C23C16/50
摘要： A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
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公开(公告)号：US20200176265A1
公开(公告)日：2020-06-04
申请号：US16564851
申请日：2019-09-09
发明人： Takayuki KATSUNUMA , Toru HISAMATSU , Shinya ISHIKAWA , Yoshihide KIHARA , Masanobu HONDA , Maju TOMURA , Sho KUMAKURA
IPC分类号： H01L21/311 , H01L21/02
摘要： A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
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公开(公告)号：US20190259627A1
公开(公告)日：2019-08-22
申请号：US16347697
申请日：2017-11-02
IPC分类号： H01L21/311 , H01J37/32
摘要： In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.
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