公开(公告)号：US20070019432A1

公开(公告)日：2007-01-25

申请号：US11428865

申请日：2006-07-06

申请人： Takeshi Shimada

发明人： Takeshi Shimada

IPC分类号： F21S8/10

CPC分类号： B60Q1/115 ,  B60Q1/124 ,  F21S41/143 ,  F21S41/147 ,  F21S41/675 ,  F21Y2115/10

摘要： An LED light source vehicular lamp can include a plurality of LED modules each having respective appropriate light distributions. The modules can be attached to a housing to form a light distribution characteristic through combination of the light emitted from the LED modules. At least part of the LED modules can include an illumination axis that is substantially at a right angle to the optical axis of the lamp such that light reflected at a reflector provided in the housing travels in the illumination direction of the LED light source vehicular lamp. The LED modules can also include a rear end that protrudes from an outer surface of the housing to improve the heat radiation efficiency, which enables the use of LED chips that can use higher permissible current values.

摘要翻译： LED光源车载灯可以包括各自具有适当的光分布的多个LED模块。 模块可以通过组合从LED模块发射的光而附接到壳体以形成配光特性。 LED模块的至少一部分可以包括基本上与灯的光轴成直角的照明轴，使得在设置在壳体中的反射器处反射的光在LED光源车辆灯的照明方向上行进。 LED模块还可以包括从外壳的外表面突出的后端，以提高热辐射效率，这使得能够使用可以使用更高允许电流值的LED芯片。

公开(公告)号：US20060086692A1

公开(公告)日：2006-04-27

申请号：US11063180

申请日：2005-02-23

申请人： Kotaro Fujimoto ,  Takeshi Shimada

发明人： Kotaro Fujimoto ,  Takeshi Shimada

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： C23F4/00

摘要： The present invention provides a plasma etching method that can etch a metal film as a material to be etched selectively against anorganic film underlying the material. The etching method comprising the steps of introducing an etching gas in an etching chamber wherein a material to be etched is placed, and exciting the etching gas to a plasma state to etch that material to be etched, wherein the material to be etched is a metal film 3 consisting of Au, Pt, Ag, Ti, TiN, TiO, Al, an aluminum alloy, or a laminated film of these films laminated on an organic film 5; and the etching gas is a mixed gas containing at least a gas selected from a group consisting of Cl2, BCl3, and HBr; and at least a gas selected from a group consisting of CH2Cl2, CH2Br2, CH3Cl, CH3Br, CH3F, and CH4.

摘要翻译： 本发明提供了一种等离子体蚀刻方法，其可以将金属膜作为要被选择性蚀刻的材料蚀刻到材料下面的有机膜上。 蚀刻方法包括以下步骤：在蚀刻室中引入蚀刻气体，其中放置待蚀刻的材料，并将蚀刻气体激发到等离子体状态以蚀刻待蚀刻的材料，其中待蚀刻的材料是金属 由Au，Pt，Ag，Ti，TiN，TiO，Al，铝合金构成的薄膜3或层叠在有机薄膜5上的这些薄膜的层压薄膜; 并且所述蚀刻气体是至少含有选自由Cl 2 3，BCl 3 N和HBr组成的组的气体的混合气体; 和至少一种选自CH 2 2 CH 2，CH 2 Br 2 CH，CH 2，CH 2， 3，Cl 3，CH 3 Br，CH 3 F和CH 4。

公开(公告)号：US20050218337A1

公开(公告)日：2005-10-06

申请号：US10875231

申请日：2004-06-25

申请人： Yoshitaka Kai ,  Kenichi Kuwabara ,  Takeo Uchino ,  Yasuhiro Nishimori ,  Takeshi Oono ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Kenichi Kuwabara ,  Takeo Uchino ,  Yasuhiro Nishimori ,  Takeshi Oono ,  Takeshi Shimada

IPC分类号： H01L21/66 ,  H01J37/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/677 ,  H01L21/68

CPC分类号： H01L21/67207 ,  H01L21/67167

摘要： The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers 3, 4 for subjecting a sample 8 to vacuum processing; a vacuum carriage means 2 for carrying the sample into and out of the vacuum processing chamber; a switchable chamber 5 capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette supporting means 9 for supporting a plurality of cassettes 7 capable of housing samples; a carriage means 6 capable of moving vertically for taking out a sample from a given cassette on the cassette supporting means; and a control means performing carriage control for carrying the sample taken out of the given cassette via the carriage means, the switchable chamber and the vacuum carriage means into the vacuum processing chamber, and for carrying the processed sample out of the vacuum processing chamber; wherein the vacuum processing chamber is equipped with an etching chamber 3 and a defect inspection chamber or CD measurement chamber 4 for inspecting the sample for defects.

摘要翻译： 本发明提供一种半导体制造装置，其能够防止样品的携带时间增加，样品输出的劣化，占地面积的增加和投资成本的增加。 真空处理装置包括用于对样品8进行真空处理的多个真空处理室3,4; 用于将样品进出真空处理室的真空托架装置2; 能够在大气和真空之间切换的可切换室5，用于将样品进出真空处理室; 用于支撑能够容纳样品的多个盒带7的盒支撑装置9; 能够垂直移动以从盒支撑装置上的给定盒带取出样品的托架装置6; 以及控制装置，执行托架控制，用于将从所述给定盒中取出的样品经由所述滑架装置，所述可切换室和所述真空托架装置运送到所述真空处理室中，并将所述经处理的样品运送出所述真空处理室; 其中真空处理室配备有用于检查样品缺陷的蚀刻室3和缺陷检查室或CD测量室4。

公开(公告)号：US20050014380A1

公开(公告)日：2005-01-20

申请号：US10650841

申请日：2003-08-29

申请人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

发明人： Yoshitaka Kai ,  Ken Yoshioka ,  Tadamitsu Kanekiyo ,  Takeshi Shimada

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/31122 ,  H01L21/31116

摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of sidewalls of the Poly-Si gate portion 33 during plasma etching of HfO2.

摘要翻译： 使用选自Ar气体，He气体，Ar + He混合气体的气体和通过将CH 4与前述气体混合形成的混合气体，使用气体等离子体来蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，同时保持温度 40℃以上，因此确保HfO 2膜32与Poly-Si层33，基板Si层31和SiO 2掩模34之间的高蚀刻选择比，减少基板Si层31和侧面的损耗量 在HfO 2的等离子体蚀刻期间蚀刻多晶硅栅极部分33的侧壁。

公开(公告)号：US06546580B2

公开(公告)日：2003-04-15

申请号：US09983196

申请日：2001-10-23

申请人： Takeshi Shimada

发明人： Takeshi Shimada

IPC分类号： A47C2710

CPC分类号： A61G7/05776

摘要： An air mattress includes a first through a fourth sheets (6, 7, 8, and 9), respectively, which are bonded together along the peripheries thereof and at a multiplicity of bonding spots, creating a triple-layer air cell structure consisting of a first, a second, and a third air cells (13, 15, and 17), respectively. A multiplicity of first bonding spots (10) bonding the first and second sheets together are spaced apart at regular intervals along longitudinal and transverse lines such that four neighboring spots occupy four corners of a tetragon. On the other hand, a multiplicity of second bonding spots (14) bonding the second and the third sheets together are arranged at positions which correspond to the centers of the tetragons. The third air cell has the same structure as the first air cell. These air cells are inflated such that the third air cell maintains high a pressure, while the first and second air cells maintain a low pressure. The low pressure air mattress may effectively prevent bedsores.

公开(公告)号：US06413896B1

公开(公告)日：2002-07-02

申请号：US09701931

申请日：2000-12-06

申请人： Takeshi Shimada ,  Kazuhiro Nishikawa ,  Kazuya Toji

发明人： Takeshi Shimada ,  Kazuhiro Nishikawa ,  Kazuya Toji

IPC分类号： C04B3500

CPC分类号： H01L21/31691 ,  C04B35/453 ,  C04B35/495 ,  H01B3/12

摘要： A method for producing X(BaZ.Sr1-Z)(Zn⅓.(TaM.Nb1-M)⅔)O3—Y(BaZ′.Sr1-Z′)(Ga½.Ta½)O3 solid solution system, characterized in that sintering is carried out at a temperature of 1400° C. to 1550° C. in an atmosphere of N2 containing oxygen in a concentration of 6% to 40% or sintering is carried out at a temperature of 1400° C. to 1550° C. after presintering at a temperature of 900° C. to 1300° C. This method is suitably used in order to constantly produce a dielectric porcelain composition for an electronic device which has a reduced temperature coefficient of resonance frequency and an excellent specific dielectric constant, and is uniform with respect to the quality distribution in one composition, by suppressing the evaporation of the Zn contained in a conventional porcelain composition of a perovskite type compound and adjusting the oxygen concentration in an atmosphere for sintering to a specific value without controlling a composition.

摘要翻译： 制备X（BaZ.Sr1-Z）（Zn 1/3。（TaM.Nb1-M）⅔）O3-Y（BaZ'.Sr1-Z'）（Ga½.Ta½）O3固溶体系的方法，其特征在于烧结 在含氧浓度为6〜40％的N 2的气氛中，在1400〜1550℃的温度下进行烧结，或在1400〜1550℃的温度下进行烧结。 在900℃至1300℃的预烧结后，适当地使用该方法，以便不断地制造具有降低的共振频率的温度系数和优异的比介电常数的用于电子器件的电介质瓷组合物，以及 通过抑制钙钛矿型化合物的常规陶瓷组合物中所含的Zn的蒸发，并且将烧结气氛中的氧浓度调节至特定值而不控制组成，相对于一种组合物中的质量分布是均匀的。