公开(公告)号：US20050116182A1

公开(公告)日：2005-06-02

申请号：US10986910

申请日：2004-11-15

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01B15/00 ,  G01B11/14 ,  G01N23/225 ,  H01J37/28 ,  H01J37/304 ,  H01L21/66

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

摘要翻译： 本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸 根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差， 从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。

公开(公告)号：US20050048780A1

公开(公告)日：2005-03-03

申请号：US10918381

申请日：2004-08-16

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N23/225 ,  G06T7/00 ,  H01L21/302 ,  H01L21/461 ,  H01L21/66

CPC分类号： G06T7/0004 ,  G01N23/225 ,  G01N2223/6116 ,  G06T2207/30148 ,  H01J2237/2814 ,  H01L22/12

摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.

摘要翻译： 用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。 检测信号波形根据信号量的变化被分成多个区域。 分割区域的大小用于样本的三维形状的定量评估。 该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个 一个组件变化，以及组件在所有形状变化中的变化。 通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

公开(公告)号：US09671223B2

公开(公告)日：2017-06-06

申请号：US13807281

申请日：2011-05-20

申请人： Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

发明人： Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

IPC分类号： G01B15/04 ,  G01Q40/00 ,  H01J37/26 ,  H01J37/28

CPC分类号： G01B15/04 ,  G01Q40/00 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/22 ,  H01J2237/24514 ,  H01J2237/24578 ,  H01J2237/2823 ,  H01J2237/2826

摘要： Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

公开(公告)号：US08502145B2

公开(公告)日：2013-08-06

申请号：US13541939

申请日：2012-07-05

申请人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US20120267529A1

公开(公告)日：2012-10-25

申请号：US13541939

申请日：2012-07-05

申请人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

IPC分类号： H01J37/26

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US08217348B2

公开(公告)日：2012-07-10

申请号：US12354823

申请日：2009-01-16

申请人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka Iwasaki ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US07732761B2

公开(公告)日：2010-06-08

申请号：US11673057

申请日：2007-02-09

申请人： Maki Tanaka ,  Chie Shishido

发明人： Maki Tanaka ,  Chie Shishido

IPC分类号： G06F7/60 ,  G06F17/10 ,  G06F17/50 ,  G06G7/48 ,  G01N23/00 ,  G21K7/00 ,  G06G7/62

CPC分类号： G01N23/2251 ,  G01N2223/6116 ,  H01J2237/24578

摘要： To provide a consistent, high-speed, high-precision measurement method based on an electron beam simulation by reflecting the apparatus characteristics of a CD-SEM in an electron beam simulation, the present invention discloses a method for measuring a measurement target pattern with a CD-SEM, the method comprising the steps of performing an electron beam simulation on various target pattern shapes, which is reflected apparatus characteristic and image acquisition conditions; creating SEM simulated waveforms; storing a combination of the created SEM simulated waveforms and pattern shape information corresponding to the created SEM simulated waveforms as a library; comparing an acquired actual electron microscope image with the SEM simulated waveforms; selecting the SEM simulated waveform that is most similar to the actual electron microscope image; and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform.

摘要翻译： 为了通过在电子束模拟中反映CD-SEM的装置特性，基于电子束模拟提供一致的，高速，高精度的测量方法，本发明公开了一种测量目标图案的方法， CD-SEM，该方法包括以下步骤：对各种目标图案形状进行电子束模拟，反射装置特性和图像采集条件; 创建SEM模拟波形; 存储所创建的SEM模拟波形的组合和对应于所创建的SEM模拟波形的图案形状信息作为库; 将获得的实际电子显微镜图像与SEM模拟波形进行比较; 选择与实际电子显微镜图像最相似的SEM模拟波形; 以及根据与选择的SEM模拟波形对应的图案形状信息来估计测量对象图案的形状。

公开(公告)号：US07633061B2

公开(公告)日：2009-12-15

申请号：US12034696

申请日：2008-02-21

申请人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

发明人： Maki Tanaka ,  Chie Shishido ,  Wataru Nagatomo

IPC分类号： H01J37/256 ,  G01B15/00 ,  G03F9/00

CPC分类号： G01B15/04 ,  G01N23/225 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.

摘要翻译： 对电子束照射的电阻低的材料难以得到S / N比高的电子显微镜像。 常规的图像平滑处理可以提高测量的稳定性，但是该过程存在绝对值的测量误差，灵敏度的降低，立方体信息的质量劣化等的问题。 在本发明中，考虑到测定对象图案的尺寸偏差，通过进行图像平均化处理而不劣化信号波形的立方体信息，测量稳定性与精度和灵敏度的提高相一致。 因此，可以高精度地实现图案尺寸和形状的测量，并且可以使用该测量来控制高灵敏度的半导体制造工艺。

公开(公告)号：US20090212211A1

公开(公告)日：2009-08-27

申请号：US12354823

申请日：2009-01-16

申请人： Mayuka IWASAKI ,  Chie Shishido ,  Maki Tanaka

发明人： Mayuka IWASAKI ,  Chie Shishido ,  Maki Tanaka

IPC分类号： G01N23/00

CPC分类号： G03F7/70608 ,  H01J2237/221 ,  H01J2237/2817

摘要： The invention provides a system for achieving detection and measurement of film thickness reduction of a resist pattern with high throughput which can be applied to part of in-line process management. By taking into consideration the fact that film thickness reduction of the resist pattern leads to some surface roughness of the upper surface of the resist, a film thickness reduction index value is calculated by quantifying the degree of roughness of the part corresponding to the upper surface of the resist on an electron microscope image of the resist pattern which has been used in the conventional line width measurement. The amount of film thickness reduction of the resist pattern is estimated by applying the calculated index value to a database previously made for relating a film thickness reduction index value to an amount of film thickness reduction of the resist pattern.

摘要翻译： 本发明提供了一种用于实现高生产率的抗蚀剂图案的膜厚减少的检测和测量的系统，其可以应用于部分在线过程管理。 通过考虑抗蚀剂图案的膜厚度降低导致抗蚀剂的上表面的一些表面粗糙度的事实，通过对与上述表面的上表面对应的部分的粗糙度进行定量来计算膜厚减小指标值 抗蚀剂图案的电子显微镜图像已被用于传统的线宽测量。 通过将计算的指标值应用于先前将膜厚减小指标值与抗蚀剂图案的膜厚度降低量相关联的数据库来估计抗蚀剂图案的膜厚度减少量。

公开(公告)号：US07230243B2

公开(公告)日：2007-06-12

申请号：US11156478

申请日：2005-06-21

申请人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

发明人： Maki Tanaka ,  Atsushi Miyamoto ,  Hidetoshi Morokuma ,  Chie Shishido ,  Mitsuji Ikeda ,  Yasutaka Toyoda

IPC分类号： H01J37/28 ,  G01N23/00 ,  G21K7/00 ,  G06K9/00

CPC分类号： H01J37/28 ,  H01J2237/2814

摘要： The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction φ(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

摘要翻译： 本发明涉及一种用于使用SEM测量三维轮廓的方法和装置，其能够基于二次侧的量的倾斜角度依赖性精确地测量均匀的平面或几乎垂直的表面的三维轮廓 电子图像信号由SEM检测。 具体地说，倾斜图像获取单元通过使用从观察方向phi入射到图案上的电子束来获得待测图案上的平坦区域a和c 1的倾斜图像（倾斜二次电子图像）I（2） 2）。 然后，轮廓测量单元基于所获得的倾斜图像来假设在图案上的每个点处的斜率（或表面倾斜角），并且连续地积分每个假设的斜率值（或表面倾斜角值），以测量三维轮廓S 2a和 S 2 c。 这种布置允许精确地测量三维轮廓。