公开(公告)号：US20130166240A1

公开(公告)日：2013-06-27

申请号：US13807281

申请日：2011-05-20

Applicant: Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

Inventor： Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

IPC: G01Q40/00

CPC classification number: G01B15/04 ,  G01Q40/00 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/22 ,  H01J2237/24514 ,  H01J2237/24578 ,  H01J2237/2823 ,  H01J2237/2826

Abstract: Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

Abstract translation: 之前，测量每个临界尺寸SEM的器件特征图案，通过模型基本库（MBL）匹配系统推测进行尺寸测量的物体的截面形状，通过SEM模拟产生信号波形来进行尺寸测量 输入推定的截面形状和装置特性参数，将尺寸测量结果的差异作为机器差异进行登记。 在实际测量中，从每个临界尺寸SEM的尺寸测量结果可以看出，通过减去注册的机器差异来校正机器差异。 此外，通过周期性地测量上述器件特性参数并预测上述尺寸测量结果来监测临界尺寸SEM随时间变化的变化。 根据本发明，需要相当多的时间和精力的机器差异的实际测量是不必要的。 另外，随着时间的推移，随着时间的推移，随着时间的推移，随着时间的推移，样品随着时间变化的变化也受到影响。

公开(公告)号：US09671223B2

公开(公告)日：2017-06-06

申请号：US13807281

申请日：2011-05-20

Applicant: Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

Inventor： Chie Shishido ,  Maki Tanaka ,  Katsuhiro Sasada

IPC: G01B15/04 ,  G01Q40/00 ,  H01J37/26 ,  H01J37/28

CPC classification number: G01B15/04 ,  G01Q40/00 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/22 ,  H01J2237/24514 ,  H01J2237/24578 ,  H01J2237/2823 ,  H01J2237/2826

Abstract: Beforehand, the device characteristic patterns of each critical dimension SEM are measured, a sectional shape of an object to undergo dimension measurement is presumed by a model base library (MBL) matching system, dimension measurements are carried out by generating signal waveforms through SEM simulation by inputting the presumed sectional shapes and the device characteristic parameters, and differences in the dimension measurement results are registered as machine differences. In actual measurements, from the dimension measurement results in each critical dimension SEM, machine differences are corrected by subtracting the registered machine differences. Furthermore, changes in critical dimension SEM's over time are monitored by periodically measuring the above-mentioned device characteristic parameters and predicting the above-mentioned dimension measurement results. According to the present invention, actual measurements of machine differences, which require considerable time and effort, are unnecessary. In addition, the influence of changes in samples over time, which is problematic in monitoring changes in devices over time, can be eliminated.

公开(公告)号：US20100258739A1

公开(公告)日：2010-10-14

申请号：US11802452

申请日：2007-05-23

Applicant: Hiroaki Mito ,  Katsuhiro Sasada ,  Kazuo Kato ,  Tomohiro Kudo ,  Tomonori Saeki

Inventor： Hiroaki Mito ,  Katsuhiro Sasada ,  Kazuo Kato ,  Tomohiro Kudo ,  Tomonori Saeki

IPC: H01J37/20 ,  H01J37/18

CPC classification number: H01J37/185 ,  H01J37/20 ,  H01J2237/18 ,  H01J2237/2001 ,  H01J2237/204 ,  H01J2237/2817 ,  H01L21/67028 ,  H01L21/67213 ,  H01L21/67248

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract translation: 提供了样品测量方法和带电粒子束装置，其去除了附着在电子显微镜的样品室中的样品的污染物，以消除对后续制造工艺的不利影响。 为了达到这个目标，在通过使用带电粒子束进行样品测量或检查之后，在下一个半导体制造过程之前去除样品上的污染物。 这允许去除样品室中附着在样品上的污染物，因此可以使在测量和检查之后的半导体制造过程中可能发生的故障或缺陷被最小化。

公开(公告)号：US07745782B2

公开(公告)日：2010-06-29

申请号：US12038641

申请日：2008-02-27

Applicant: Tatsuaki Ishijima ,  Katsuhiro Sasada ,  Ritsuo Fukaya

Inventor： Tatsuaki Ishijima ,  Katsuhiro Sasada ,  Ritsuo Fukaya

IPC: G01N23/00 ,  G21K7/00 ,  H01J37/26

CPC classification number: G01N23/225 ,  H01J2237/004 ,  H01J2237/216 ,  H01J2237/24564 ,  H01J2237/28

Abstract: A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.

Abstract translation: 公开了一种方法和装置，用于当通过扫描电子束测量样品的静电电荷量或通过扫描电子束时，基于电子束扫描，基于静电电荷存储来抑制静电电荷量或散焦的误差。 静电电荷测量方法，焦点调节方法或用于测量静电电荷量或控制对样品的施加电压的扫描电子显微镜，在将电子束的扫描位置移动到样品上的同时，将能量过滤器的施加电压改变 。

公开(公告)号：US07435958B2

公开(公告)日：2008-10-14

申请号：US11356438

申请日：2006-02-17

Applicant: Tsuyoshi Inanobe ,  Sho Takami ,  Yoichi Ose ,  Katsuhiro Sasada

Inventor： Tsuyoshi Inanobe ,  Sho Takami ,  Yoichi Ose ,  Katsuhiro Sasada

IPC: H01J37/10

CPC classification number: H01J37/09 ,  H01J37/16 ,  H01J2237/1405 ,  H01J2237/16 ,  H01J2237/2614 ,  H01J2237/2617 ,  H01J2237/28

Abstract: A structure of an electron beam apparatus having shielding properties for shielding against an environmental magnetic field is provided. The electron beam apparatus comprises a mirror barrel for housing a magnetic lens for converging an electron beam onto a specimen and a specimen chamber for housing the specimen, wherein a non-magnetic material having conductivity is used as a material for at least one of the mirror barrel and a main body of the specimen chamber. The material for the mirror barrel or the main body of the specimen chamber is an aluminum alloy and a thickness of a sidewall of the mirror barrel or the main body of the specimen chamber is 10 mm or more. A magnetic plate having a thickness smaller than that of the sidewall of the mirror barrel or the main body of the specimen chamber is provided on an inner sidewall of the mirror barrel or the main body of the specimen chamber.

Abstract translation: 提供了具有屏蔽性能以防止环境磁场的电子束装置的结构。 电子束装置包括用于容纳用于将电子束会聚在试样上的磁性透镜的反射镜筒和用于容纳样本的试样室，其中具有导电性的非磁性材料用作至少一个反射镜的材料 桶和样品室的主体。 用于镜筒的材料或试样室的主体是铝合金，镜筒的侧壁或试样室的主体的厚度为10mm以上。 厚度小于镜筒侧壁或试样室主体的磁性板设置在镜筒的内侧壁或试样室的主体上。

公开(公告)号：US07205550B2

公开(公告)日：2007-04-17

申请号：US11450382

申请日：2006-06-12

Applicant: Tsuyoshi Inanobe ,  Sho Takami ,  Yoichi Ose ,  Katsuhiro Sasada

Inventor： Tsuyoshi Inanobe ,  Sho Takami ,  Yoichi Ose ,  Katsuhiro Sasada

IPC: H03M1/22

CPC classification number: H01J37/09 ,  H01J37/16 ,  H01J2237/1405 ,  H01J2237/16 ,  H01J2237/2614 ,  H01J2237/2617 ,  H01J2237/28

Abstract: A structure of an electron beam apparatus having shielding properties for shielding against an environmental magnetic field is provided. The electron beam apparatus comprises a mirror barrel for housing a magnetic lens for converging an electron beam onto a specimen and a specimen chamber for housing the specimen, wherein a non-magnetic material having conductivity is used as a material for at least one of the mirror barrel and a main body of the specimen chamber. The material for the mirror barrel or the main body of the specimen chamber is an aluminum alloy and a thickness of a sidewall of the mirror barrel or the main body of the specimen chamber is 10 mm or more. A magnetic plate having a thickness smaller than that of the sidewall of the mirror barrel or the main body of the specimen chamber is provided on an inner sidewall of the mirror barrel or the main body of the specimen chamber.

Abstract translation: 提供了具有屏蔽性能以防止环境磁场的电子束装置的结构。 电子束装置包括用于容纳用于将电子束会聚在试样上的磁性透镜的反射镜筒和用于容纳样本的试样室，其中具有导电性的非磁性材料用作至少一个反射镜的材料 桶和样品室的主体。 用于镜筒的材料或试样室的主体是铝合金，镜筒的侧壁或试样室的主体的厚度为10mm以上。 厚度小于镜筒侧壁或试样室主体的磁性板设置在镜筒的内侧壁或试样室的主体上。

公开(公告)号：US5692061A

公开(公告)日：1997-11-25

申请号：US391006

申请日：1995-02-21

Applicant: Katsuhiro Sasada ,  Tomoharu Nakahara ,  Hidekazu Araki

Inventor： Katsuhiro Sasada ,  Tomoharu Nakahara ,  Hidekazu Araki

IPC: G06T1/00 ,  G06K9/00 ,  G06T7/00

CPC classification number: G06T7/0046 ,  G06K9/00201 ,  G06T7/0051

Abstract: A method for recognizing a three-dimensional objective in which a two-dimensional image is obtained from the same viewing point as a distance image obtained by picking up the objective in a three-dimensional space and the two-dimensional image is utilized to previously limit an existence zone of the objective under detection for the distance image and to perform objective detecting operation over the partial distance image in the limited zone, thereby realizing a sufficiently high speed detection of, in particular, the three-dimensional objective.

Abstract translation: 一种用于识别三维物镜的方法，其中从与通过拾取三维空间中的物镜获得的距离图像相同的视点获得二维图像，并且二维图像被用于预先限定 对距离图像进行检测的目标的存在区域，并且在受限区域中对部分距离图像执行目标检测操作，从而实现特别是三维目标的足够高的速度检测。

公开(公告)号：US20090032693A1

公开(公告)日：2009-02-05

申请号：US12182704

申请日：2008-07-30

Applicant: Junichi Kakuta ,  Kazuhiro Ueda ,  Tatsuya Maeda ,  Hiroyuki Saito ,  Katsuhiro Sasada

Inventor： Junichi Kakuta ,  Kazuhiro Ueda ,  Tatsuya Maeda ,  Hiroyuki Saito ,  Katsuhiro Sasada

IPC: G01D18/00 ,  G01N23/00

CPC classification number: G01N23/225 ,  H01J37/1471 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/1501 ,  H01J2237/1532

Abstract: The present invention aims to provide an axis alignment method, astigmatism correction method and SEM for implementing these methods, which can prevent an alignment or correction error attributable to conditions of a specimen. A first aspect is to obtain the difference between the optimal values acquired from an automatic axis alignment result on a standard sample and from each of automatic axis alignment results on a observation target sample, and to correct an optimal value adjusted using the standard sample by use of the difference thus obtained. A second aspect is to acquire an optimal stigmator value (astigmatism correction signal) by using the standard sample, to store the optimal stigmator value as a default value, to add the optimal stigmator value and the default value depending on the height of an observation target sample pattern, and to perform an astigmatism correction on the basis of the resultant stigmator value.

Abstract translation: 本发明旨在提供一种用于实现这些方法的轴对准方法，像散校正方法和SEM，其可以防止由于样品的条件引起的对准或校正误差。 第一方面是获得从标准样品的自动轴对准结果获取的最佳值与观察目标样品上的自动轴对准结果中的每一种之间的差异，并且通过使用校正使用标准样品调整的最佳值 的差异。 第二方面是通过使用标准样本来获取最佳标称值（像散校正信号），以将最佳标称值作为默认值来存储，以根据观察目标的高度添加最优标示符值和默认值 样本图案，并且基于得到的标记值进行散光校正。

公开(公告)号：US20070235646A1

公开(公告)日：2007-10-11

申请号：US11655275

申请日：2007-01-19

Applicant: Kazuma Tanii ,  Yuji Kasai ,  Katsuhiro Sasada ,  Eiichi Seya

Inventor： Kazuma Tanii ,  Yuji Kasai ,  Katsuhiro Sasada ,  Eiichi Seya

IPC: G01N23/00

CPC classification number: G01N23/2251 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/216 ,  H01J2237/24564

Abstract: Disclosed is a scanning electron microscope capable of performing speedy focusing by automatically measuring an electrostatic voltage of a surface of a wafer inside a specimen chamber in an accurate, and easy speedy manner, the wafer assuming different electrostatic voltages inside and outside the specimen chamber. The scanning electron microscope that controls optical systems measures an electrostatic voltage of the specimen according to an electrostatic capacitance between the both parts of the divided electrode plate, by dividing an electrode plate into two parts and switching potentials of electrodes obtained by the division with each other, an electrostatic voltage of the specimen based on an electrostatic capacitance between the both parts of the divided electrode plate. The electrode plate is used for applying a retarding voltage and arranged over a specimen.

Abstract translation: 公开了一种扫描电子显微镜，其能够以准确且容易的方式自动测量样品室内的晶片表面的静电电压，从而在晶片内部和外部具有不同的静电电压来进行快速聚焦。 控制光学系统的扫描电子显微镜通过将电极板分成两部分并通过彼此分割获得的电极的切换电位来测量根据分隔电极板的两个部分之间的静电电容的样品的静电电压 基于分割电极板的两个部分之间的静电电容的试样的静电电压。 电极板用于施加延迟电压并且布置在试样上。

公开(公告)号：US07247864B2

公开(公告)日：2007-07-24

申请号：US11305109

申请日：2005-12-19

Applicant: Hiroaki Mito ,  Katsuhiro Sasada ,  Kazuo Kato ,  Tomohiro Kudo ,  Tomonori Saeki

Inventor： Hiroaki Mito ,  Katsuhiro Sasada ,  Kazuo Kato ,  Tomohiro Kudo ,  Tomonori Saeki

IPC: H01J37/18

CPC classification number: H01J37/185 ,  H01J37/20 ,  H01J2237/18 ,  H01J2237/2001 ,  H01J2237/204 ,  H01J2237/2817 ,  H01L21/67028 ,  H01L21/67213 ,  H01L21/67248

Abstract: A sample measuring method and a charged particle beam apparatus are provided which remove contaminants, that have adhered to a sample in a sample chamber of an electron microscope, to eliminate adverse effects on the subsequent manufacturing processes. To achieve this objective, after the sample measurement or inspection is made by using a charged particle beam, contaminants on the sample are removed before the next semiconductor manufacturing process. This allows the contaminants adhering to the sample in the sample chamber to be removed and therefore failures or defects that may occur in a semiconductor fabrication process following the measurement and inspection can be minimized.

Abstract translation: 提供了样品测量方法和带电粒子束装置，其去除了附着在电子显微镜的样品室中的样品的污染物，以消除对后续制造工艺的不利影响。 为了达到这个目标，在通过使用带电粒子束进行样品测量或检查之后，在下一个半导体制造过程之前去除样品上的污染物。 这允许去除样品室中附着在样品上的污染物，因此可以使在测量和检查之后的半导体制造过程中可能发生的故障或缺陷被最小化。