摘要:
A magnetic thin film head includes a soft magnetic alloy thin film having in a composition expressed by the formula Fe.sub.X N.sub.Y O.sub.Z, wherein each of X, Y and Z represents an atomic composition ratio, and preferably having four phases including an iron oxide expressed as Fe.sub.2 O.sub.3, iron nitrides expressed as Fe.sub.4 N and Fe.sub.3 N respectively, and .alpha.-Fe. X, Y and Z appearing in the composition formula are preferably in the following relations:0.005.ltoreq.Y.ltoreq.0.120.005.ltoreq.Z.ltoreq.0.12X+Y+Z=1
摘要翻译:磁性薄膜头包括具有式FeXNYOZ表示的组成的软磁性合金薄膜,其中X,Y和Z各自表示原子组成比,优选具有包含以Fe 2 O 3表示的氧化铁,铁 分别以Fe4N和Fe3N表示的氮化物和α-Fe。 组合式中出现的X,Y和Z优选为以下关系:0.005≤Y≤0.120.005 = Z <= 0.12X + Y + Z = 1
摘要:
With a view to solving the problem of "pseudo-gap" in a parallel type MIG head and to improving its reproduction output, effective combinations of the principal magnetic path forming face and the gap-forming face were determined empirically for the case of using a single-crystal ferrite core material. The improved magnetic head comprises a pair of magnetic core halves made of a single-crystal ferrite, at least one of said magnetic core halves having a thin ferromagnetic metal film formed on the gap-forming face, and said thin ferromagnetic metal film abutting against the other magnetic core half with a non-magnetic material being interposed to form a magnetic gap, the improvement wherein the principal magnetic path forming face of the magnetic core half provided with said thin ferromagnetic metal film has a crystal plane generally designated {211} whereas a vector A that is parallel to the crystal axis in said principal magnetic path forming face and that is directed away from the gap-forming face forms an angle .theta. of the range 0.degree.-60.degree. or 150.degree.-180.degree. with a vector B that is parallel to the intersection of the principal magnetic path forming face and the gap-forming face and that approaches the face opposite to a recording medium.
摘要:
The present invention provides a thin film EL device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer interposed between the three layers, the emitting layer containing atoms of a rare-earth element and fluorine atoms in its host material, the atom ratio (F/RE) of the fluorine atoms (F) to the rare-earth atoms (RE) being adjusted to the range of 0.5 to 2.5, and a process for producing the EL device being characterized in that the emitting layer is prepared by forming a film under a condition substantially free from oxygen gas and/or moisture and subjecting the film to a heat treatment at a temperature of 200.degree. C. to 700.degree. C. so that the host material of the emitting layer contains atoms of a rare-earth element (RE) and fluorine atoms (F) in an adjusted atom ratio (F/RE) in the range of 0.5 to 2.5.The present invention affords a thin film EL device which emits, for example, a green luminescence with a high brightness.
摘要:
To enable stable collision avoidance operation without the need to install an infrastructure or the like even in a dangerous area where running out is likely to occur. An autonomous moving body according to the present invention includes: a distance measuring sensor that measures a distance to an object existing in an environment; a distance information acquisition unit that acquires a distance measurement value of the distance measuring sensor as distance information on a measurement point; and a dangerous area extraction unit that categorizes adjacent measurement points as an identical object according to a distance difference between the measurement points, and extracts an endpoint of the object as a dangerous area when the categorized object itself has a size equal to or larger than a predetermined threshold and when an opening formed between endpoints of the objects has a width equal to or larger than a predetermined threshold, in which the autonomous moving body travels so as to avoid a collision in the extracted dangerous area.
摘要:
A concentration distribution in an active material of a battery unit is calculated by using a diffusion equation, and a first polarization elimination time taken for the concentration distribution in the active material to fall within an allowable range is calculated assuming that charge and discharge of the battery unit is not performed. A concentration distribution in an electrolyte of the battery unit is calculated by using a diffusion equation, and a second polarization elimination time taken for the concentration distribution in the electrolyte to fall within an allowable range is calculated assuming that the charge and the discharge of the battery unit is not performed. It is determined that polarization of the battery unit is eliminated when a time for which the charge and the discharge of the battery unit is not performed is longer than the longer one of the first polarization elimination time and the second polarization elimination time.
摘要:
An estimation apparatus of estimating a deterioration state of a secondary battery has a current sensor measuring an electric current of the secondary battery, a current estimating section estimating the electric current of the secondary battery by using a battery model, and a deterioration estimating section estimating a second deterioration component produced in association with a salt concentration imbalance in the secondary battery. The deterioration estimating section estimates the second deterioration component by using the measured current obtained from the current sensor, the estimated current obtained from the current estimating section, and a first deterioration component produced in association with wear of the secondary battery. The deterioration estimating section corrects the estimated current by using a ratio between a resistance change rate of the secondary battery when the second deterioration component is eliminated and a resistance change rate during charge and discharge of the secondary battery.
摘要:
An X-ray imaging apparatus is provided with a multi X-ray source and a collimator in which a plurality of slits for X-rays to pass through are two-dimensionally formed, the size and position of the slits being adjustable. A control unit, as a first control mode, controls the size and position of the slits to move an examination region in parallel, when an X-ray source is changed to a different X-ray source, such that the examination directions are parallel before and after the change. Also, the control unit, as a second control mode, controls the size and position of the slits to rotate the examination direction, when an X-ray source is changed to a different X-ray source, such that the center of the examination regions is the same before and after the change.
摘要:
In an X-ray generator which includes an electron beam generating unit which has a plurality of electron emitters and generates an electron beam corresponding to driven electron emitters, and a target electrode which generates X-rays with the irradiation position of an electron beam generated by the electron beam generating unit being an X-ray focus, the X-ray focus shape formed by a set of X-ray focuses on the target electrode is controlled by individually controlling driving of the plurality of electron emitters.
摘要:
A radiation detection panel including a photoelectric conversion element that detects fluorescence by a phosphor layer, the radiation detection panel comprising: a base material for supporting the phosphor layer, including the photoelectric conversion element; and a protective film for covering the phosphor layer, wherein the phosphor layer is formed on a surface and at least one lateral face of the base material, and an angle between the surface and the at least one lateral face is less than 90 degrees.
摘要:
In a conventional semiconductor device, protection of a to-be-protected element from a surge voltage is difficult because the to-be-protected element is turned on before a protection element due to variations in manufacturing conditions. In a semiconductor device of the present invention, a protection element and a MOS transistor have part of their structures formed under common conditions. N type diffusion layers of the protection element and the MOS transistor are formed in the same process, while the N type diffusion layer of the protection element has a larger diffusion width than the N type diffusion layer of the MOS transistor. With this structure, when a surge voltage is applied to an output terminal, the protection element is turned on before the MOS transistor, and thereby the MOS transistor is protected from an avalanche current.