公开(公告)号：US20080043370A1

公开(公告)日：2008-02-21

申请号：US11826290

申请日：2007-07-13

申请人： Kei Hirata ,  Shinji Hara ,  Takayasu Kanaya ,  Takeo Kagami

发明人： Kei Hirata ,  Shinji Hara ,  Takayasu Kanaya ,  Takeo Kagami

IPC分类号： G11B5/127

CPC分类号： G11B5/39

摘要： An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.

摘要翻译： MR元件包括其磁化方向响应于外部磁场而变化的自由层。 两个偏置磁场施加层邻近MR元件的两个侧表面设置。 每个偏置磁场施加层包括非磁性中间层以及设置成夹持中间层的第一磁性层和第二磁性层。 第一和第二磁性层通过RKKY相互作用彼此反铁磁交换耦合。

公开(公告)号：US20080024934A1

公开(公告)日：2008-01-31

申请号：US11790396

申请日：2007-04-25

申请人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01L27/222 ,  H01L43/08

摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.

摘要翻译： MR元件结合了分层结构。 层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。 间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

公开(公告)号：US20070279801A1

公开(公告)日：2007-12-06

申请号：US11806224

申请日：2007-05-30

申请人： Naoki Ohta ,  Takeo Kagami

发明人： Naoki Ohta ,  Takeo Kagami

IPC分类号： G11B5/187

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/3967 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes a step of forming on a lower electrode layer an MR multi-layered film having a cap layer at a top thereof, a step of forming a mask on the cap layer of the MR multi-layered film, a step of patterning the MR multi-layered film by milling through the mask to form an MR multi-layered structure, a step of forming a magnetic domain control bias layer by using a lift off method using the mask, a step of, after forming the magnetic domain control bias layer, forming an additional cap layer on the cap layer and a part of the magnetic domain control bias layer, a step of planarizing a top surface of the additional cap layer and the magnetic domain control bias layer, and a step of forming an upper electrode layer on the planarized top surface.

摘要翻译： 电流在与层面垂直的方向上流动的MR元件的制造方法包括：在下部电极层上形成具有在顶部具有盖层的MR多层膜的步骤，形成掩模 在MR多层膜的盖层上，通过铣削通过掩模形成MR多层膜以形成MR多层结构的步骤，通过使用电梯形成磁畴控制偏置层的步骤 在形成磁畴控制偏压层之后，在盖层和磁畴控制偏置层的一部分上形成附加的盖层的步骤，平面化附加盖的顶表面的步骤 层和磁畴控制偏置层，以及在平坦化的顶表面上形成上电极层的步骤。

公开(公告)号：US07231705B2

公开(公告)日：2007-06-19

申请号：US10773234

申请日：2004-02-09

申请人： Takeo Kagami ,  Kazuki Sato

发明人： Takeo Kagami ,  Kazuki Sato

IPC分类号： G11B5/127 ,  G11B5/33 ,  B44C1/22

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052 ,  Y10T29/4906

摘要： A pattern forming method includes forming a resist pattern for lift off of a first film disposed on a surface side of a base, patterning the first film by dry etching using the resist pattern as a mask, depositing a second film after patterning, removing the resist pattern to remove a portion of the second film on the resist pattern, and etching the surface side of the base after removing the resist pattern. The etching includes dry-etching the surface side of the base using etching particles with a main incident angle of the etching particles to the surface side of the base being set in a range of 60° to 90° relative to a normal direction of the one surface of the base. The dry etching is performed while rotating the base about an axis substantially parallel with the normal direction.

摘要翻译： 图案形成方法包括形成用于剥离设置在基底的表面侧上的第一膜的抗蚀剂图案，使用抗蚀剂图案作为掩模将干燥蚀刻图案化第一膜，在图案化之后沉积第二膜，除去抗蚀剂 去除抗蚀剂图案上的第二膜的一部分的图案，并且在去除抗蚀剂图案之后蚀刻基底的表面侧。 蚀刻包括使用蚀刻颗粒的基底的表面侧的蚀刻粒子的主入射角相对于一个的法线方向设定在60°〜90°的范围内的基底的表面侧的干法蚀刻 底座表面。 在使基部围绕基本上与法线方向平行的轴线旋转的同时进行干法蚀刻。

公开(公告)号：US20070053114A1

公开(公告)日：2007-03-08

申请号：US11500379

申请日：2006-08-08

申请人： Takumi Uesugi ,  Satoshi Miura ,  Takeo Kagami

发明人： Takumi Uesugi ,  Satoshi Miura ,  Takeo Kagami

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  G11C11/16 ,  H01F10/3254 ,  H01F41/307 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

摘要： A magneto-resistive element has a lower layer, a tunnel barrier layer, and an upper layer. The lower layer, the tunnel barrier layer, and the upper layer are disposed adjacent to each other and are stacked in this order. A magnetization direction of either of the lower layer and the upper layer is fixed relative to an external magnetic field, and a magnetization direction of the other layer is variable in accordance with the external magnetic field. A crystalline portion and a non-crystalline portion co-exist in a plane that is parallel with a surface of the tunnel barrier layer.

摘要翻译： 磁阻元件具有下层，隧道势垒层和上层。 下层，隧道势垒层和上层相邻配置并依次层叠。 下层和上层之一的磁化方向相对于外部磁场固定，另一层的磁化方向根据外部磁场而变化。 结晶部分和非结晶部分共存于与隧道势垒层的表面平行的平面中。

公开(公告)号：US06992870B2

公开(公告)日：2006-01-31

申请号：US10215022

申请日：2002-08-09

申请人： Takeo Kagami ,  Kazuki Sato ,  Shunji Saruki ,  Takumi Uesugi

发明人： Takeo Kagami ,  Kazuki Sato ,  Shunji Saruki ,  Takumi Uesugi

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01L43/08

摘要： An upper metal layer made of a non-magnetic metal is formed as a protection layer on the top surface of a free layer positioned topmost of a magneto-resistive layer constituting a TMR device. An upper electrode, serving additionally as an upper magnetic shield layer, is electrically connected to the free layer through an underlying layer of the upper electrode, and the upper metal layer. The thickness of the upper metal layer is chosen to be 10 nm or more.

公开(公告)号：US07916430B2

公开(公告)日：2011-03-29

申请号：US11836529

申请日：2007-08-09

申请人： Takeo Kagami ,  Takayasu Kanaya

发明人： Takeo Kagami ,  Takayasu Kanaya

IPC分类号： G11B5/39

CPC分类号： G11B5/3163 ,  G11B5/3912

摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an upper magnetic shield layer formed on the MR multi-layered structure, and an additional lower magnetic shield layer directly laminated on the lower magnetic shield layer outside both side ends in a track-width direction of the MR multi-layered structure. The additional lower magnetic shield layer is directly contacted with both side surfaces in a track-width direction of the MR multi-layered structure. A top surface of the additional lower magnetic shield layer is positioned higher in height than a top surface of the lower magnetic shield layer in a region where the MR multi-layered structure is formed.

摘要翻译： 薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流在垂直于层压层表面的方向上流动，形成在MR多层上的上磁屏蔽层 并且在MR多层结构的轨道宽度方向上的两个侧端外侧直接层压在下磁屏蔽层上的另外的下磁屏蔽层。 附加的下磁屏蔽层在MR多层结构的轨道宽度方向上与两个侧表面直接接触。 在形成MR多层结构的区域中，附加下磁屏蔽层的顶表面的高度位于比下磁屏蔽层的顶表面高。

公开(公告)号：US07876537B2

公开(公告)日：2011-01-25

申请号：US11790396

申请日：2007-04-25

申请人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

发明人： Takumi Uesugi ,  Tetsuro Sasaki ,  Takeo Kagami ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  H01L27/222 ,  H01L43/08

摘要： An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the second surface of the spacer layer and having a fixed direction of magnetization. The spacer layer is a layer at least part of which is made of a material other than a conductor, and the spacer layer intercepts the passage of currents or limits the passage of currents as compared with a layer entirely made of a conductor. The MR element further incorporates a conductive film that is disposed on the peripheral surface of the layered structure and allows conduction between the free layer and the pinned layer.

摘要翻译： MR元件结合了分层结构。 层状结构包括：具有朝向相反方向的第一表面和第二表面的间隔层; 邻近所述间隔层的第一表面设置并具有响应于信号磁场而变化的磁化方向的自由层; 以及与所述间隔层的第二表面相邻并且具有固定的磁化方向的被钉扎层。 间隔层是其至少一部分由导体以外的材料制成的层，并且与完全由导体制成的层相比，间隔层拦截电流的流动或限制电流的流动。 MR元件还包括设置在层状结构的外围表面上的导电膜，并允许自由层和钉扎层之间的导电。

公开(公告)号：US07770284B2

公开(公告)日：2010-08-10

申请号：US11806224

申请日：2007-05-30

申请人： Naoki Ohta ,  Takeo Kagami

发明人： Naoki Ohta ,  Takeo Kagami

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/3967 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes forming on a lower electrode layer an MR multi-layered film having a cap layer at a top thereof, forming a mask on the cap layer of the MR multi-layered film, patterning the MR multi-layered film by milling through the mask to form an MR multi-layered structure, forming a magnetic domain control bias layer by using a lift off method using the mask, after forming the magnetic domain control bias layer, forming an additional cap layer on the cap layer and a part of the magnetic domain control bias layer, planarizing a top surface of the additional cap layer and the magnetic domain control bias layer, and forming an upper electrode layer on the planarized top surface.

摘要翻译： 电流在垂直于层平面的方向流动的MR元件的制造方法包括在下电极层上形成在其顶部具有盖层的MR多层膜，在其上形成掩模 MR多层膜，通过铣削通过掩模来形成MR多层膜以形成MR多层结构，在形成磁畴控制之后，通过使用使用掩模的剥离方法形成磁畴控制偏置层 偏置层，在盖层上形成附加的盖层和磁畴控制偏置层的一部分，平坦化附加盖层的顶表面和磁畴控制偏置层，以及在平坦化的顶部上形成上电极层 表面。

公开(公告)号：US20090237839A1

公开(公告)日：2009-09-24

申请号：US12052633

申请日：2008-03-20

申请人： Kei Hirata ,  Satoshi Miura ,  Tomohito Mizuno ,  Takeo Kagami

发明人： Kei Hirata ,  Satoshi Miura ,  Tomohito Mizuno ,  Takeo Kagami

IPC分类号： G11B5/60 ,  G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/08

摘要： A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first magnetic layer and the third magnetic layer; a first non-magnetic intermediate layer sandwiched between said first and second magnetic layers, said first non-magnetic intermediate layer allowing said first magnetic layer and said second magnetic layer to be exchange-coupled such that the magnetization directions thereof are anti-parallel to each other when no magnetic field is applied; and a second non-magnetic intermediate layer sandwiched between said second and third magnetic layers, said second non-magnetic intermediate layer producing a magnetoresistance effect between said second magnetic layer and said third magnetic layer; wherein sense current is adapted to flow in a direction perpendicular to a film plane; a bias magnetic layer provided on an opposite side of said magnetoresistive stack from an air bearing surface, said bias magnetic layer applying a bias magnetic field to said magnetoresistive stack in a direction perpendicular to the air bearing surface.

摘要翻译： 磁阻效应元件包括：磁阻堆叠，其包括：其磁化方向根据外部磁场而变化的第一，第二和第三磁性层，所述第二磁性层位于所述第一磁性层和所述第三磁性层之间; 夹在所述第一和第二磁性层之间的第一非磁性中间层，所述第一非磁性中间层允许所述第一磁性层和所述第二磁性层交换耦合，使得其磁化方向与每个磁性层反平行 另外当不施加磁场时; 以及夹在所述第二和第三磁性层之间的第二非磁性中间层，所述第二非磁性中间层在所述第二磁性层和所述第三磁性层之间产生磁阻效应; 其中感测电流适于在垂直于膜平面的方向上流动; 偏置磁性层，其设置在所述磁阻堆叠的与空气支承表面相反的一侧上，所述偏磁层在与所述空气轴承表面垂直的方向上向所述磁阻堆叠施加偏置磁场。