摘要:
To store image data scanned by an image scanning unit in a way that corresponds to each page group, an image processing system scans an original and generates image data, and stores the image data in a storage unit separately from image data previously stored in the storage unit if a scan command is given via a first command input unit, and stores the image data in the storage unit by associating the image data with image data previously stored in the storage unit if a scan command is given via a second command input unit.
摘要:
In this invention, when a printer driver uses data obtained by referring to a table, the printer driver searches a first table of two, first and second tables to obtain a search condition of the second table. The printer driver searches the second table using the obtained search condition to obtain required data. When another search condition is added, the search condition is added to the first able, and data corresponding to the added search condition is added to the second table.
摘要:
The present invention relates to the compound represented by formula (I) A—X—Y-Z-B (I) (wherein A is a cyclic group which may have a substituent(s); X is a single bond or a spacer; Y is a single bond or a spacer; Z is a single bond or a spacer; B is a hydrocarbon group which may have a substituent(s) or a cyclic group which may have a substituent(s)), a salt thereof, a solvate thereof or a prodrug thereof. The compound represented by formula (I), a salt thereof, a solvate thereof or a prodrug thereof is useful for preventive and/or therapeutic agent for a disease caused by stress.
摘要:
A Faraday rotator of multilayer film type is provided in which satisfactory optical characteristics are obtained with a small number of layers. In the Faraday rotator, a first periodic dielectric multilayer film made of silicon dioxide SiO2 and tantalum pentaoxide Ta2O5 is formed on a substrate, then a magneto-optical thin film, and a second periodic dielectric multilayer film made of tantalum pentaoxide Ta2O5 and silicon dioxide SiO2 are formed sequentially. The first and second periodic dielectric multilayer films sandwich the magneto-optical thin film such that their respective higher refractive dielectric thin films are in contact with the magneto-optical thin film. The number of layers of the first periodic dielectric multilayer film is larger than that of the second periodic dielectric multilayer film.
摘要翻译:提供了一种多层膜法拉第旋转器,其中获得了令人满意的光学特性,具有少量层。 在法拉第旋转器中,在衬底上形成由二氧化硅SiO 2和五氧化钽Ta 2 O 5制成的第一周期性电介质多层膜,然后形成磁光薄膜和由五氧化钽Ta 2 O 5和二氧化硅SiO 2制成的第二周期性电介质多层膜 顺序地形成。 第一和第二周期性电介质多层膜夹着磁光薄膜使它们各自的高折射率电介质薄膜与磁光薄膜接触。 第一周期性电介质多层膜的层数大于第二周期性电介质多层膜的层数。
摘要:
The present invention provides a magneto-optical member capable of ensuring an excellent light transmittance and an optical isolator using the same. A first one-dimensional magnetic photonic crystal having a magneto-optical thin film, and a second one-dimensional magnetic photonic crystal having another magneto-optical thin film are laminated so as to sandwich a dielectric thin film with a small refractive index having an optical length of &lgr;/4+m&lgr;/2 where &lgr; is a wavelength of light and m is 0 or a positive integer. Since a plurality of magneto-optical thin films are present as magnetic thin films and hence the total thickness of the magnetic thin films is increased, the Faraday rotation angle is increased. Also, a large light transmittance can be obtained because of the presence of the dielectric thin film with a small refractive index having (&lgr;/4+m&lgr;/2) thickness where the first and second one-dimensional magnetic photonic crystals are laminated.
摘要:
Disclosed herein is a solar cell which is composed basically of a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a third semiconductor layer formed between them. The third semiconductor layer has a band gap narrower than that of the first and second semiconductor layers. The third semiconductor layer also has a pn junction therein. The semiconductor layers are each separated by a buffer layer in which the composition changes gradually across the thickness so that the lattice mismatch between the semiconductor layers is relieved.
摘要:
A semiconductor memory cell, or a semiconductor memory cell for ASICs, of the structure is provided which ensures stable transistor operation, which does not require a large-capacitance capacitor as required in conventional DRAMs, which ensures reliable reading and writing of information, that permits short-channel design, and that allows the cell area to be reduced. The semiconductor memory cell includes: an information storage transistor TR.sub.1 comprising a semiconductor channel layer Ch.sub.1, first and second conductive gates G.sub.1, G.sub.2, and first and second conductive layers L.sub.1, L.sub.2 ; and a switching transistor TR.sub.2 comprising a semiconductor channel forming region Ch.sub.2, a third conductive gate G.sub.3, and third and fourth conductive layers L.sub.3, L.sub.4, wherein the fourth conductive layer L.sub.4 is connected to the second conductive gate G.sub.2, the first conductive gate G.sub.1 and the third conductive gate G.sub.3 are connected to a first memory-cell-selection line, the first conductive layer L.sub.l and the third conductive layer L.sub.3 are connected to a second memory-cell-selection line, the second conductive layer L.sub. 2 is connected to a fixed potential, and the semiconductor channel forming region Ch.sub.2 is connected to a read/write selection line.
摘要:
There is disclosed a magnetic head which can be used for various magnetic disk drives and easily and economically fabricated. The head comprises a magnetic core consisting of a ferrite. The core is composed of two parts bonded together with a glass. A gap, a magnetic metal film, and an intermediate film are formed between the two parts of the core. The intermediate film is formed of the same glass as said glass by sputtering and has a thickness between 30 and 150 .ANG.. The metal film has a thickness between 1 and 10 .mu.m. The glass consists mainly of SiO.sub.2, for example.