公开(公告)号：US07457054B2

公开(公告)日：2008-11-25

申请号：US11604555

申请日：2006-11-27

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B9/06

CPC分类号： G02B13/003 ,  G02B9/06

摘要： An imaging lens including, in order from an object side towards an image surface side, a diaphragm, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, and a second lens which is a lens having a positive power whose convex surface faces the image surface side, wherein conditions expressed by each of following expressions (1)-(6) are to be satisfied; 1.25≧L/fl≧0.8, 0.55≧f1/f2>0, 1.5≧f1/fl≧0.9, 1≧d2/d1≧0.2, 0.35≧d1/fl≧0.1, and 0.27≧d3/fl≧0.1 (where, L: entire length of the imaging lens, fl: focal distance of the entire imaging lens, f1: focal distance of the first lens, f2: focal distance of the second lens, d1: center thickness of the first lens, d2: space between the first lens and the second lens on the optical axis, and d3: center thickness of the second lens).

摘要翻译： 一种成像透镜，包括从物体侧朝向图像表面侧的顺序，隔膜，具有凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜，以及具有 凸面朝向图像面侧的正电力，其中满足以下表达式（1） - （6）表示的条件; 1/2> = 1 / f 1 = 0.8,0.55> = f 1/2 2 > 0,1.5> = f 1 / = 0.9,1> = d 2 2 / d 1 / / SUB >> = 0.2，0.35> = d 1 / f 1 = 0.1和0.27> = d 3 / f 1 = 0.1（其中，L：成像透镜的整个长度，f1：整个成像透镜的焦距，f 1 <1：焦距 第一透镜，第二透镜，第二透镜的焦距，d <1/2>第一透镜的中心厚度，d 2 <2： 光轴上的第一透镜和第二透镜，以及第二透镜的中心厚度d 3 3）。

公开(公告)号：US07422947B2

公开(公告)日：2008-09-09

申请号：US11519891

申请日：2006-09-13

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： H01L21/336 ,  H01L21/84

CPC分类号： H01L29/78606 ,  H01L21/28052 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device manufacturing method comprises depositing a semiconductor layer and mask material in order over a semiconductor substrate on an insulating film; patterning the semiconductor layer and mask material to form a semiconductor layer in a predetermined region; removing a surface portion of the insulating film by a predetermined depth by performing etching by using the mask material as a mask; forming gate insulating films on at least a pair of opposing side surfaces of the semiconductor layer; depositing silicon on the insulating film, gate insulating films, and mask material; patterning the silicon into a gate pattern to form, on the gate insulating films, a silicon film having the gate pattern on predetermined regions of the pair of opposing side surfaces of the semiconductor layer; ion-implanting a predetermined impurity into the semiconductor layer by using the silicon film as a mask, thereby forming a source region and drain region in two end portions of the semiconductor layer where the silicon film is not formed; and forming a metal film by depositing a metal on at least the silicon film, and forming a gate electrode by reacting the silicon film with the metal film.

摘要翻译： 半导体器件制造方法包括：在半导体衬底上依次在绝缘膜上沉积半导体层和掩模材料; 图案化半导体层和掩模材料以在预定区域中形成半导体层; 通过使用掩模材料作为掩模进行蚀刻，去除绝缘膜的表面部分预定深度; 在所述半导体层的至少一对相对的侧表面上形成栅极绝缘膜; 在绝缘膜上沉积硅，栅极绝缘膜和掩模材料; 将硅图案化成栅极图案，以在栅极绝缘膜上形成在半导体层的一对相对侧表面的预定区域上具有栅极图案的硅膜; 通过使用硅膜作为掩模将预定的杂质离子注入到半导体层中，从而在不形成硅膜的半导体层的两个端部形成源极区域和漏极区域; 以及通过在至少所述硅膜上沉积金属而形成金属膜，以及通过使所述硅膜与所述金属膜反应来形成栅电极。

公开(公告)号：US07405133B2

公开(公告)日：2008-07-29

申请号：US11256929

申请日：2005-10-25

申请人： Katsuaki Natori ,  Tomohiro Saito ,  Yoshihiro Uozumi

发明人： Katsuaki Natori ,  Tomohiro Saito ,  Yoshihiro Uozumi

IPC分类号： H01L21/20

CPC分类号： H01L28/55 ,  H01L21/76807 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/75

摘要： A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously covering the plurality of lower electrodes, and an upper electrode formed on the surface of the ferroelectric film, wherein each of the capacitors is formed for each of the plurality of lower electrode.

摘要翻译： 一种半导体器件，包括半导体衬底和形成在半导体衬底上的多个电容器。 电容器包括形成在半导体衬底上的多个下电极，连续地覆盖多个下电极的铁电膜和形成在铁电体膜的表面上的上电极，其中形成每个电容器 多个下电极。

公开(公告)号：US20080037139A1

公开(公告)日：2008-02-14

申请号：US11881353

申请日：2007-07-26

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B9/06

CPC分类号： G02B13/003 ,  G02B9/06 ,  G02B13/18

摘要： It is to provide an imaging lens that can sufficiently meet demands for size and weight reduction and further improvement in optical performance, and improve productivity. The imaging lens is used for forming an image of an object on an image-taking surface of a solid image sensor element and comprises, in order from an object side to an image surface side, a diaphragm, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, and a second lens which is a meniscus lens having a positive power whose convex surface faces the image surface side, wherein a condition expressed by the following expression is to be satisfied: 1.45≦(r3+r4)/(r3−r4)≦3.4 (where, r3: center radius curvature of the object side face of the second lens, and r4: center radius curvature of the image surface side face of the second lens).

摘要翻译： 本发明提供一种能够充分满足尺寸和重量减轻的要求并进一步提高光学性能并提高生产率的成像透镜。 成像透镜用于在固体图像传感器元件的摄像表面上形成物体的图像，并且从物体侧到像面侧依次包括光阑，作为弯月形透镜的第一透镜 具有凸面朝向物体侧的正功率，以及作为凸面与图像面侧的正向功率的弯月形透镜的第二透镜，其中满足以下表达式的条件：1.45 <= （R 3 + r 4）/（r 3 -r 4）= 3.4（其中R 1，R 2，R 3， 第二透镜的物体侧面的中心半径曲率和第二透镜的像面侧面的中心半径曲率。

公开(公告)号：US20070284583A1

公开(公告)日：2007-12-13

申请号：US11882618

申请日：2007-08-03

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： H01L29/78

CPC分类号： H01L29/785 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823437 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/78621

摘要： A method of manufacturing a semiconductor device, including forming a gate electrode or dummy gate on a fin-type silicon layer, introducing an impurity into the fin-type silicon layer with the gate electrode or dummy gate used as mask so as to form first impurity regions, etching the gate electrode or dummy gate so as to form a gate electrode or dummy gate having a reduced size, and introducing an impurity into the fin-type silicon layer with the gate electrode or dummy gate of the reduced size used as a mask so as to form second impurity regions positioned adjacent to the first impurity diffusion regions.

摘要翻译： 一种制造半导体器件的方法，包括在翅片型硅层上形成栅电极或伪栅极，将栅极电极或伪栅极用作掩模，将杂质引入鳍型硅层，以形成第一杂质 区域，蚀刻栅电极或虚拟栅极，以形成尺寸减小的栅电极或伪栅，并将杂质引入鳍型硅层，将栅极电极或虚栅极用作掩模 以形成邻近第一杂质扩散区定位的第二杂质区。

公开(公告)号：US07295383B2

公开(公告)日：2007-11-13

申请号：US11580422

申请日：2006-10-12

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B13/18 ,  G02B9/00

CPC分类号： G02B13/0035 ,  G02B9/12

摘要： It is to provide an imaging lens that maintains optical performance and achieves reduction in size and weight. The imaging lens comprises, in order from an object side towards an image surface side, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, a diaphragm, a second lens which is a meniscus lens having a positive power whose convex surface faces the image surface side, and a third lens which is a biconcave lens having a negative power, wherein the following conditions are to be satisfied; 1.3≧L/fl≧1, 0.8≧f1/fl≧0.6, 0.12≧f1/f2>0, −0.1≧f1/f3≧−0.25 (where, L: entire length of the lens system [distance from the surface of the object side of the first lens to the image taking surface [air reduced length]], fl: focal distance of the entire lens system, f1: focal distance of the first lens, f2: focal distance of the second lens, and f3: focal distance of the third lens).

摘要翻译： 它是提供保持光学性能并实现尺寸和重量的减小的成像透镜。 成像透镜从物体侧朝向图像面侧依次包括作为其凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜，隔膜，作为弯月形透镜的第二透镜，具有 凸面朝向图像面侧的正电力以及具有负电力的双凹透镜的第三透镜，其中满足以下条件; 1.3> = L / fl> = 1，0.8> = f 1 / f 1 = 0.6，0.12> = f 1 / f 2 > 0，-0.1> = f 1 / f 3 3 / / SUB >> = - 0.25（其中，L：透镜系统的整个长度[距物体表面的距离 第一透镜到图像拍摄表面[空气减小长度]]，fl：整个透镜系统的焦距f 1 ：第一透镜的焦距，f 2 < SUB>：第二透镜的焦距和f 3 3：第三透镜的焦距）。

公开(公告)号：US20070133108A1

公开(公告)日：2007-06-14

申请号：US11603873

申请日：2006-11-22

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B9/06

CPC分类号： G02B13/006 ,  G02B9/06 ,  G02B13/003

摘要： An imaging lens including, in order from an object side towards an image surface side, a diaphragm, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, and a second lens which is a lens having a positive power whose convex surface faces the image surface side, wherein conditions expressed by each of following expressions (1)-(6) are to be satisfied; 1.25≧L/fl≧0.8, 1≧f1/f2≧0.2, 1.8≧f1/fl≧1, 0.5>d2/d1≧0.2, 0.35≧d1/fl≧0.1, and 0.27≧d3/fl≧0.1 (where, L: entire length of the lens system, fl: focal distance of the entire lens system, f1: focal distance of the first lens, f2: focal distance of the second lens, d1: center thickness of the first lens, d2: space between the first lens and the second lens on the optical axis, and d3: center thickness of the second lens).

摘要翻译： 一种成像透镜，包括从物体侧朝向图像表面侧的顺序，隔膜，具有凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜，以及具有 凸面朝向图像面侧的正电力，其中满足以下表达式（1） - （6）表示的条件; 1.25> = L / fl> = 0.8,1> = f 1 / f 2 2 / / SUB >> = 0.2,1.8> = f 1 / > = 1，0.5> d 2 / d 1 / / SUB >> = 0.2，0.35> = d 1 / f 1 = 0.1和0.27> = d 3 / f 1 = 0.1（其中，L：透镜系统的整个长度，fl：整个透镜系统的焦距，f 1 <1：：焦距 第一透镜，第二透镜，第二透镜的焦距，d <1/2>第一透镜的中心厚度，d 2 <2： 光轴上的第一透镜和第二透镜，以及第二透镜的中心厚度d 3 3）。

公开(公告)号：US20070127142A1

公开(公告)日：2007-06-07

申请号：US11604556

申请日：2006-11-27

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B9/06

CPC分类号： G02B13/003 ,  G02B9/06

摘要： An imaging lens including, in order from an object side towards an image surface side, a diaphragm, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, and a second lens which is a lens having a positive power whose convex surface faces the image surface side, wherein conditions expressed by each of following expressions (1)-(6) are to be satisfied; 1.25≧L/fl≧0.8, 0.55≧f1/f2>0, 1.5≧f1/fl≧0.9, 1≧d2/d1≧0.2, 0.35≧d1/fl≧0.1, and 0.27≧d3/fl≧0.1 (where, L: entire length of the imaging lens, fl: focal distance of the entire imaging lens, f1: focal distance of the first lens, f2: focal distance of the second lens, d1: center thickness of the first lens, d2: space between the first lens and the second lens on the optical axis, and d3: center thickness of the second lens).

公开(公告)号：US20070091470A1

公开(公告)日：2007-04-26

申请号：US11580422

申请日：2006-10-12

申请人： Tomohiro Saito

发明人： Tomohiro Saito

IPC分类号： G02B9/12

CPC分类号： G02B13/0035 ,  G02B9/12

摘要： It is to provide an imaging lens that maintains optical performance and achieves reduction in size and weight. The imaging lens comprises, in order from an object side towards an image surface side, a first lens which is a meniscus lens having a positive power whose convex surface faces the object side, a diaphragm, a second lens which is a meniscus lens having a positive power whose convex surface faces the image surface side, and a third lens which is a biconcave lens having a negative power, wherein the following conditions are to be satisfied; 1.3≧L/fl≧1, 0.8≧f1/fl≧0.6, 0.1 2≧f1/f2>0, −0.1≧f1/f3≧−0.25 (where, L: entire length of the lens system [distance from the surface of the object side of the first lens to the image taking surface [air reduced length ]], fl: focal distance of the entire lens system, f1: focal distance of the first lens, f2: focal distance of the second lens, and f3: focal distance of the third lens)

摘要翻译： 它是提供保持光学性能并实现尺寸和重量的减小的成像透镜。 成像透镜从物体侧朝向图像面侧依次包括作为其凸面朝向物体侧的正光焦度的弯月形透镜的第一透镜，隔膜，作为弯月形透镜的第二透镜，具有 凸面朝向图像面侧的正电力以及具有负电力的双凹透镜的第三透镜，其中满足以下条件; 1.3> = L / fl> = 1，0.8> = f 1 / f 1 = 0.6,0.1 2> = f 1 / f 2 > 0，-0.1> = f 1 / f 3 3 / / SUB >> = - 0.25（其中，L：透镜系统的整个长度[距物体表面的距离 第一透镜的一侧到图像拍摄表面[空气减小的长度]]，fl：整个透镜系统的焦距，f <1 ：第一透镜的焦距，f <2 < / SUB>：第二透镜的焦距和f 3 3：第三透镜的焦距）

公开(公告)号：US07198994B2

公开(公告)日：2007-04-03

申请号：US10991485

申请日：2004-11-19

申请人： Atsushi Yagishita ,  Tomohiro Saito

发明人： Atsushi Yagishita ,  Tomohiro Saito

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L21/84 ,  H01L27/1203

摘要： Dummy gate patterns 111, 112 are formed on a silicon active layer 103 of an SOI substrate, and thereafter, these dummy gate patterns 111, 112 are removed to form gate grooves 130, 132. A threshold voltage of each transistor is adjusted by etching a silicon active layer 103 in any one of these gate, grooves 130, 132 to reduce a thickness of a portion constituting a channel region. This enables the enhancement of freedom degree and so on in circuit designing according to conditions.

摘要翻译： 在SOI衬底的硅有源层103上形成虚拟栅极图案111,112，然后去除这些虚拟栅极图案111,112以形成栅极沟槽130,132。通过蚀刻栅极图案111,112来调节每个晶体管的阈值电压 这些栅极，沟槽130,132中的任一个中的硅有源层103，以减小构成沟道区域的部分的厚度。 这样可以根据条件提高电路设计中的自由度等。