摘要:
In a television meeting system, image data and voice data are transmitted and received among a plurality of terminal units. The terminal unit transmits and receives a video signal synthesized by combining desired background data selected by a user with taken-out image and voice. The terminal unit includes a recorder in which desired background data selected by the user is preliminarily recorded.
摘要:
A snow removing machine equipped with a snow removing plate is disclosed. The snow removing plate is mounted to a front portion of a vehicle body which forms part of the snow removing machine. An operating handle having grip portions is mounted to a rear portion of the vehicle body and obliquely extends upward. A battery, an electric motor and a power transmission mechanism are located below a linear line intersecting between an upper end of the snow removing plate and the grip portion. This causes the battery, the electric motor and the power transmission mechanism to be located below a view line of an operator when he looks at the snow removing plate, avoiding the view line from being disturbed to allow the operator to look at the upper end of the snow removing plate in his working attitude for thereby providing ease of operation of the snow removing machine.
摘要:
A photovoltaic cell module tile that includes a tile body, a recess, a fitting section, and a pressure member. The recess is provided in a top surface of the tile body, which stores a photovoltaic cell module. The fitting section is provided in the recess on an eaves side of the tile body. An eaves-side end portion of the photovoltaic cell module is inserted and fitted in the fitting section. The pressure member is provided on a ridge side of the tile body and presses a ridge-side end portion of the photovoltaic cell module against the tile body.
摘要:
A semiconductor apparatus such as a power MOSFET, an IGBT, or the like is provided having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. To prevent erroneous operation, the control circuit controls so that when the voltage of a gate terminal is positive relative to that of a source terminal, a first switch circuit is turned on, when the voltage of the gate terminal is negative relative to that of the source terminal, a second switch circuit is turned on, and when the gate terminal and the source terminal have an almost same potential and a drain terminal has a high potential, the second switch circuit is turned on, thereby reducing leakage current from the drain terminal to the gate terminal.
摘要:
A power transmission belt having a body with a length, an inside, an outside, and laterally spaced sides. The body has a bonding rubber layer in which elongate load carrying cords are embedded to extend lengthwise of the body. The body has a first layer on the inside of the bonding rubber layer in which a plurality of laterally spaced ribs are formed extending lengthwise of the body, and a second layer on the outside of the bonding rubber layer in which a plurality of laterally spaced ribs are formed extending lengthwise of the body. The bonding rubber layer has a sulfur-crosslinked rubber composition including an ethylene-&agr;-olefin elastomer. At least one of the first and second layers has a crosslinking product that is an organic peroxide-crosslinked rubber composition including an ethylene-&agr;-olefin elastomer.
摘要:
The upper surface of a tile body for use as a roofing material for a building is provided with a depression that holds therein a photovoltaic cell module having a function to convert solar energy into electrical energy. An adhesive is applied to the whole or part of the base of the depression, and the photovoltaic cell module, which has a terminal box on its lower surface, is fixed to the base of the depression by adhesive bonding.
摘要:
There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on. By adding such a control circuit, an insulated gate semiconductor apparatus having therein the protection circuit according to the invention can reduce a leakage current flowing from the drain terminal to the gate terminal when a negative voltage is applied to the gate and can operate at high speed without causing drop of a drain breakdown voltage.
摘要:
In a semiconductor device including a power MOSFET (M.sub.0) for the output stage, a temperature detection circuit produces an output signal upon detecting an abnormal rise in the chip temperature, the signal turns on a set input element (M.sub.1) in a latch circuit so that the latch circuit becomes a set state, the set output of the latch circuit turns on a control element (M.sub.5), causing the power MOSFET to become non-conductive so that it is protected from destruction. The latch circuit is not brought to a reset state even if the external gate terminal of the device is brought to zero volt. With a voltage outside the range of the normal input signal, e.g., a large negative voltage, being applied to the external gate terminal, the gate capacitance of the control element (M.sub.5) discharges, and consequently the latch circuit is brought to the reset state and the protective operation is cancelled. The semiconductor device is further provided with an external reset terminal, and the protective operation can also be cancelled through the application of a reset signal to the external reset terminal. The semiconductor device is protected from destruction and also from deterioration of characteristics of the power MOSFET (M.sub.0), and yet the protective operation is not cancelled erroneously by the normal input signal.