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公开(公告)号：US10569846B1
公开(公告)日：2020-02-25
申请号：US16278141
申请日：2019-02-17
申请人： Michael Murphy
发明人： Michael Murphy
摘要： A Method and Apparatus for Wake Enlargement System have been disclosed. By using water pick-ups that are mounted on a boat, controlled filling of ballast tanks is possible without the use of pumps.
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公开(公告)号：US09851095B2
公开(公告)日：2017-12-26
申请号：US12734075
申请日：2008-10-09
申请人： Michael Barrett , Michael Murphy
发明人： Michael Barrett , Michael Murphy
摘要： A candle holder comprising a body having a mouth, a base and sides that connect the mouth to the base is provided. The mouth comprises an opening arranged to receive a candle and at least a portion of the sides taper inwardly from the mouth towards the base. The inward most point of the tapered portion of the sides defines an aperture having a size which is less than that of the widest part of the candle. Also provided are a candle and a candle stand having a catching device for use with the candle holder. In use, wax and waste material from the candle pass through the aperture of the candle holder into the catching device. Thus, the candle holder can be reused repeatedly without the need for cleaning or replacement of the candle holder.
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公开(公告)号：US09272762B1
公开(公告)日：2016-03-01
申请号：US14701512
申请日：2015-04-30
申请人： Michael Murphy
发明人： Michael Murphy
CPC分类号： B63B35/85 , B63B1/34 , B63B9/00 , B63B2035/855 , B63B2207/02
摘要： A Method and Apparatus for Wake Enlargement System have been disclosed. By using water pick ups that are mounted or deployable on a boat controlled filling of ballast tanks is possible without the use of pumps.
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公开(公告)号：US09140217B2
公开(公告)日：2015-09-22
申请号：US13605896
申请日：2012-09-06
IPC分类号： F02M25/07
CPC分类号： F02M25/0737 , F02M26/32 , F28D7/1684 , F28D21/0003 , F28F1/025 , F28F1/08 , F28F2265/26 , Y02T10/121 , Y10T29/4935 , Y10T29/49373
摘要： An exhaust gas recirculation cooler for internal combustion engines and a method of forming same. One or more cooler tubes incorporate a flexible section, comprised of one or more integrally formed convolutions, with a tube and fin architecture. The exhaust gas recirculation cooler provides thermal compensation, on a per-tube basis, with the flexible sections of the one or more cooler tubes individually displacing upon the thermal expansion of any of the respective tubes.
摘要翻译： 用于内燃机的废气再循环冷却器及其形成方法。 一个或多个冷却器管包括由一个或多个整体形成的卷积组成的柔性部分，具有管和翅片结构。 排气再循环冷却器在每个管的基础上提供热补偿，一个或多个冷却管的柔性部分在任何相应的管的热膨胀时单独移动。
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公开(公告)号：US08857356B1
公开(公告)日：2014-10-14
申请号：US13690288
申请日：2012-11-30
申请人： Michael Murphy
发明人： Michael Murphy
CPC分类号： B63B1/32 , B63B35/73 , B63B39/061 , B63B43/06 , B63B2001/325 , B63B2035/855 , B63B2207/02 , Y02T70/12 , Y10T29/4984
摘要： A Method and Apparatus for Insta Fill Wake System have been disclosed. By using a gate that can be positioned as closed, flood, and drain and deployable on a boat, controlled filling/emptying/holding of water in ballast tanks is possible without the use of pumps.
摘要翻译： 已经公开了用于Insta填充唤醒系统的方法和装置。 通过使用可以定位为关闭，洪水和排水并可部署在船上的门，可以在不使用泵的情况下控制在压载舱中填充/排空/保持水。
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公开(公告)号：US08776030B2
公开(公告)日：2014-07-08
申请号：US12415075
申请日：2009-03-31
IPC分类号： G06F9/44
CPC分类号： G06F8/456
摘要： One embodiment of the present invention sets forth a technique for translating application programs written using a parallel programming model for execution on multi-core graphics processing unit (GPU) for execution by general purpose central processing unit (CPU). Portions of the application program that rely on specific features of the multi-core GPU are converted by a translator for execution by a general purpose CPU. The application program is partitioned into regions of synchronization independent instructions. The instructions are classified as convergent or divergent and divergent memory references that are shared between regions are replicated. Thread loops are inserted to ensure correct sharing of memory between various threads during execution by the general purpose CPU.
摘要翻译： 本发明的一个实施例提出了一种用于翻译使用并行编程模型编写的应用程序的技术，用于在多核图形处理单元（GPU）上执行以由通用中央处理单元（CPU）执行。 依赖于多核GPU的特定功能的应用程序的部分由翻译器转换，以供通用CPU执行。 应用程序被划分为独立于同步的指令的区域。 指令被分类为在区域之间共享的收敛或发散和不同的存储器引用。 插入线程循环以确保在通用CPU执行期间在不同线程之间正确共享内存。
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公开(公告)号：US08522345B2
公开(公告)日：2013-08-27
申请号：US12917430
申请日：2010-11-01
IPC分类号： G06F11/00
CPC分类号： G06F17/30569 , G06F17/30507 , G06F17/30896
摘要： There are methods and apparatus, including computer program products, for managing hierarchical reference data. There is a Web page for access by a user, where the Web page includes (i) data representing a hierarchy and (ii) rules defining modifications that are permitted to be made to data. The user is enabled to make a real-time modification to the data based on the rules.
摘要翻译： 存在用于管理分层参考数据的方法和装置，包括计算机程序产品。 存在用于由用户访问的网页，其中网页包括（i）表示层次结构的数据，以及（ii）定义允许对数据进行修改的规则。 用户可以根据规则对数据进行实时修改。
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78.发明申请Termination and Contact Structures for a High Voltage Gan-Based Heterojunction Transistor 审中-公开用于高电压甘基异质结晶体管的端接和接触结构公开(公告)号：US20120238063A1
公开(公告)日：2012-09-20
申请号：US13458703
申请日：2012-04-27
申请人： Michael Murphy , Milan Pophristic
发明人： Michael Murphy , Milan Pophristic
IPC分类号： H01L21/338
CPC分类号： H01L29/7786 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/31683 , H01L23/3171 , H01L29/2003 , H01L29/205 , H01L29/432 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.
摘要翻译： 提供了一种半导体器件，其包括衬底，设置在衬底上的第一有源层和设置在第一有源层上的第二有源层。 第二有源层具有比第一有源层更高的带隙，使得在第一有源层和第二有源层之间产生二维电子气层。 设置在第二有源层上的端接层包括InGaN。 源极，栅极和漏极触点设置在端接层上。
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公开(公告)号：US08206631B1
公开(公告)日：2012-06-26
申请号：US12562683
申请日：2009-09-18
申请人： Metin Sitti , Michael Murphy , Burak Aksak
发明人： Metin Sitti , Michael Murphy , Burak Aksak
CPC分类号： B29C41/20 , B05D1/005 , B29C39/10 , B29C39/123 , B29C39/24 , B29C39/42 , B29C43/021 , B29C43/18 , B29C2043/185 , B29K2075/00 , B29K2105/0058 , B29K2105/0097 , B29K2105/20 , B82Y30/00 , C09J7/20 , C09J175/04 , C09J2201/626 , C09J2475/00 , Y10T428/23929 , Y10T428/23957 , Y10T428/24479
摘要： Dry adhesives and methods of making dry adhesives including a method of making a dry adhesive including applying a liquid polymer to the second end of the stem, molding the liquid polymer on the stem in a mold, wherein the mold includes a recess having a cross-sectional area that is less than a cross-sectional area of the second end of the stem, curing the liquid polymer in the mold to form a tip at the second end of the stem, wherein the tip includes a second layer stem; corresponding to the recess in the mold, and removing the tip from the mold after the liquid polymer cures.
摘要翻译： 干粘合剂和制造干燥粘合剂的方法，包括制备干燥粘合剂的方法，包括将液体聚合物施加到阀杆的第二端，在模具中将液体聚合物模制在阀杆上，其中模具包括具有横截面的凹槽， 截面积小于杆的第二端的横截面积，固化模具中的液体聚合物以在杆的第二端形成尖端，其中尖端包括第二层茎; 对应于模具中的凹部，并且在液体聚合物固化后从模具中移除尖端。
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80.发明授权Termination and contact structures for a high voltage GaN-based heterojunction transistor 有权用于高电压GaN基异质结晶体管的端接和接触结构公开(公告)号：US08169003B2
公开(公告)日：2012-05-01
申请号：US13066200
申请日：2011-04-07
申请人： Michael Murphy , Milan Pophristic
发明人： Michael Murphy , Milan Pophristic
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/2003 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/31683 , H01L23/3171 , H01L29/205 , H01L29/432 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.
摘要翻译： 提供了一种半导体器件，其包括衬底，设置在衬底上的第一有源层和设置在第一有源层上的第二有源层。 第二有源层具有比第一有源层更高的带隙，使得在第一有源层和第二有源层之间产生二维电子气层。 设置在第二有源层上的端接层包括InGaN。 源极，栅极和漏极触点设置在端接层上。
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