Abstract:
An information protection system includes a mobile terminal and an encryption module. The mobile terminal requests a key sequence by transmitting a message including a Personal Identification Number (PIN) number input by a user, and encrypts or decrypts one or more communication signals, including voice signals and data signals, based on the key sequence when the key sequence is received. The encryption module is connected to the mobile terminal. The encryption module encrypts a security key using the identifier and the PIN number of the mobile terminal, decrypts the encrypted security when requested by the mobile terminal, and transmits the key sequence generated based on the decrypted security key to the mobile terminal.
Abstract:
A method of fabricating an organic electroluminescent device (OELD) according to the present invention has steps of repairing a pixel region by irradiating a laser on a drain contact hole of a passivation layer in a pixel region in need of the repair; and disabling the connection between an organic electroluminescent diode and a drain electrode of a driving thin film transistor (TFT), where the pixel region of the OELD has i) the driving TFT comprising the drain electrode, ii) the passivation layer covering the driving TFT, while comprising the drain contact hole exposing the drain electrode of the driving TFT, and iii) the organic electroluminescent diode connected to the drain electrode of the driving TFT via the drain contact hole.
Abstract:
A high voltage/power semiconductor device using a low voltage logic well is provided. The semiconductor device includes a substrate, a first well region formed by being doped in a first location on a surface of the substrate, a second well region formed by being doped with impurity different from the first well region's in a second location on a surface of the substrate, an overlapping region between the first well region and the second well region where the first well region and the second well region substantially coexist, a gate insulating layer formed on the surface of the first and the second well regions and the surface of the overlapping region, a gate electrode formed on the gate insulating layer, a source region formed on an upper portion of the first well region, and a drain region formed on an upper portion of the second well region. The semiconductor device may also include a separating unit, which is formed in the second well region on the drain side and may be formed as a shallow trench isolation (STI) region having a lower depth than the second well region.
Abstract:
An electromagnetic interference (EMI) shielding circuit and a semiconductor integrated circuit including the same are provided. The EMI shielding circuit includes a data level comparison unit, a control signal generation unit, and a driver for EMI cancellation. The data level comparison unit generates a data comparison signal by comparing a number of high-level data transmitted through a plurality of data lines and a number of low-level data transmitted through the plurality of data lines. The control signal generation unit generates a driving control signal in response to the data comparison signal. The driver for EMI cancellation outputs an EMI cancellation signal in response to the driving control signal.
Abstract:
A wireless signal transmitting/receiving apparatus for a semiconductor system is disclosed The apparatus includes a serializer/deserializer (SERDES) circuit and a coupling pad. The SERDES circuit outputs a parallel input signal as a serial signal during transmission, and outputs a serial input signal as a parallel signal during reception. The coupling pad generates an inductively coupled wireless signal according to the serial signal outputted from the SERDES circuit, and provides a signal generated by inductive coupling with an external device as the serial input signal of the SERDES circuit.
Abstract:
A mobile device and method for performing a function using a short-range communication tag are provided. In the method, the mobile device inputs function-related information into a short-range communication tag, and recognizes proximity to or contact with the short-range communication tag. Then the mobile device reads the function-related information from the short-range communication tag, and performs a function correlated with the function-related information. This allows performing various functions of the mobile device, only depending on a user's action to bring the mobile device in proximity to or contact with the Near Field Communication (NFC) tag.
Abstract:
The present invention relates to an FPC connector for electrically connecting an FPC to contact portion of a wirings printed on a PCB, and to an FPC connection method using the same, wherein an FPC (10) is inserted into a housing (110) so that the contact portion of the FPC (10) may come in direct contact with a contact portion (2a) of the PCB, and an pressing member pressing the FPC (10) on the PCB so as to directly contact the FPC (10) to the PCB (1).
Abstract:
Disclosed is a pharmaceutical composition for treating bone disease or countering inflammation containing cartilage stem cells as an active ingredient. The present disclosure provides a novel cell treatment regimen for bone disease and inflammatory disease using the cartilage stem cells as an active ingredient. When the cartilage stem cells of the present disclosure are administered into the articular capsule, the administered cartilage stem cells are highly effective in treating bone disease and inflammatory bone disease since they grow or differentiate into chondrocytes and exhibit an anti-inflammatory activity. Since the cartilage stem cells of the present disclosure do not express histocompatibility antigens which give rise to rejection in tissue or organ transplants, autologous cells or exogenous cells can be used during cell transplantation for treatment of bone disease and inflammation.
Abstract:
A semiconductor integrated circuit includes a first voltage line to which a first ground voltage is applied, a second voltage line to which a second ground voltage is applied, a third voltage line to which a first power supply voltage is applied, and a coupling unit including a MOS transistor having a source coupled to the first voltage line, a drain coupled to the second voltage line, and a gate coupled to the third voltage line.
Abstract:
A semiconductor memory chip includes: a driving voltage reception unit configured to receive a power supply voltage and a ground voltage; a first data driving unit configured to be supplied with the power supply voltage and the ground voltage, and drive first data to output the driven first data through a first data line; a second data driving unit configured to be supplied with the power supply voltage and the ground voltage, and drive second data to output the driven second data through a second data line; and a MOS transistor coupled between the first data line and the second data line.