Nonvolatile memory with faulty cell registration
    90.
    发明授权
    Nonvolatile memory with faulty cell registration 失效
    具有故障单元注册的非易失性存储器

    公开(公告)号:US08503235B2

    公开(公告)日:2013-08-06

    申请号:US13298548

    申请日:2011-11-17

    CPC classification number: G11C16/349 G11C29/76 G11C29/88

    Abstract: In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.

    Abstract translation: 响应于由用于访问存储在所述非易失性半导体存储器中的多个数据块的系统接口单元接收到的读取命令,控制器对来自非易失性半导体存储器的两个存储器执行数据块的选择性读取操作 。 所述控制器还执行数据的并行操作,所述数据传输已经经过错误校正单元的错误检测和纠错操作的第一数据块经由所述系统接口单元从所述两个存储器之一传送到主机系统,并且 将要进行错误检测和纠错操作的第二数据块的数据传输从所述非易失性半导体存储器传输到两个存储器中的另一个。

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