摘要:
An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.
摘要:
In an optical transmitter comprising a directly modulated laser and a wavelength filter provided on a post-stage of the directly modulated laser, the wavelength filter has a modulated light input port for inputting modulated light output from the directly modulated laser, a filter transmitted light output port for outputting light having a wavelength included in a filter transmission band among the modulated light as filter transmitted light, and a filter cutoff light output port provided separately from the modulated light input port and the filter transmitted light output port and outputting light having a wavelength included in a filter cutoff band among the modulated light as filter cutoff light, and the peak of the filter transmission band is set on a shorter-wave side from the peak of the spectrum of modulated light output from the directly modulated laser.
摘要:
The present mirror device for suppressing PDL on the assumption of multiple modes of angles of input light and output light to movable mirrors with respect to the crystal axis of a crystal member at the time light passes through the crystal member. The mirror device includes a mirror system 2 and a flat-shaped crystal member 3 which is arranged in such a manner that a first angle is not larger than a second angle. The crystal member is constructed in such a manner that a third angle is substantially equal to a half of a fourth angle.
摘要:
Provided is a method for automatically determining an error of a user operation or a calorimeter caused when the calorimeter is manually slid to measure the colors of color patches on a row-by-row basis. Also provided is a method capable of determining an error or a scanning direction using a feature value obtained from the calorimetric values without using fixed reference and threshold values for each patch.
摘要:
An optical switch switches ports through which a beam is input and output and includes an optical system through which the beam passes; a movable reflector that is enclosed in a casing and reflects, at a variable angle, the beam that has passed through the optical system; and a transmissive window that is disposed in the casing at a position through which the beam passes, is made of a uniaxial crystal, and obtains a phase difference with respect to the beam passing therethrough having a wavelength λ. The phase difference is λ/4 times a positive odd integer and results from a setting of an orientation of a crystal axis and a thickness of the transmissive window.
摘要:
An optical switch switches ports through which a beam is input and output and includes an optical system through which the beam passes; a movable reflector that is enclosed in a casing and reflects, at a variable angle, the beam that has passed through the optical system; and a transmissive window that is disposed in the casing at a position through which the beam passes, is made of a uniaxial crystal, and obtains a phase difference with respect to the beam passing therethrough having a wavelength λ. The phase difference is λ/4 times a positive odd integer and results from a setting of an orientation of a crystal axis and a thickness of the transmissive window.
摘要:
In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching is removed by an isotropic dry etching. The isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen. A temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom in the isotropic dry etching.
摘要:
A wavelength selective switch for suppressing degradation of pass band characteristics when the temperature rises. The wavelength selective switch includes a spectroscopic element for separating input light and providing angular dispersion depending on wavelengths, a collective lens for gathering light output from the spectroscopic element, and a movable reflection block which includes a plurality of mirrors arranged in the direction of angular dispersion made by the spectroscopic element, changes the angles of the mirrors in a direction differing from the direction of angular dispersion, and reflects the light coming from the collective lens. The collective lens is fixed at one end with respect to the direction of angular dispersion, expands with heat in a direction in which it is not fixed when the temperature rises, and outputs the light in a direction opposite to the direction in which the angle of light output from the spectroscopic element changes.
摘要:
The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.
摘要:
A collimator array includes a substrate; a plurality of lenses formed on one face of the substrate; and a plurality of projecting parts, each of which is formed on a portion corresponding to the lens on the other face of the substrate, respectively and is fusion-connected to an optical fiber, respectively; wherein an area of the fusion-connected face of the projecting part with respect to the optical fiber is set to be larger than a cross sectional area of the optical fiber. Thereby, it is possible to provide a collimator having fewer variations in an output beam angle and a diameter of an output beam and having excellent strength, and a method for manufacturing the same.