Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method
    81.
    发明授权
    Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method 有权
    具有设置在波导两侧的衍射光栅的光半导体器件及其制造方法

    公开(公告)号:US07835418B2

    公开(公告)日:2010-11-16

    申请号:US11976123

    申请日:2007-10-22

    IPC分类号: H01S3/08

    摘要: An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer.

    摘要翻译: 有源层(18)形成在具有相互面对相反方向的一对小面(15A,15B)的半导体衬底之上。 在有源层上形成上折叠层(19),其折射率低于活性层的折射率。 衍射光栅(25)设置在波导区域(22)中的分布反馈区域的两侧的上部包层中,波导区域从半导体衬底的一个面延伸到另一个面。 端部区域(22B)被限定在波导区域的两端,并且分布式反馈区域(22A)设置在端部区域之间。 低折射率区域(26)设置在波导区域的每个端部区域的两侧的上部包层中,低折射率区域的折射率低于上部包层的折射率。

    Optical transmitter
    82.
    发明授权
    Optical transmitter 有权
    光发射机

    公开(公告)号:US07738794B2

    公开(公告)日:2010-06-15

    申请号:US11364054

    申请日:2006-03-01

    IPC分类号: H04B10/04

    摘要: In an optical transmitter comprising a directly modulated laser and a wavelength filter provided on a post-stage of the directly modulated laser, the wavelength filter has a modulated light input port for inputting modulated light output from the directly modulated laser, a filter transmitted light output port for outputting light having a wavelength included in a filter transmission band among the modulated light as filter transmitted light, and a filter cutoff light output port provided separately from the modulated light input port and the filter transmitted light output port and outputting light having a wavelength included in a filter cutoff band among the modulated light as filter cutoff light, and the peak of the filter transmission band is set on a shorter-wave side from the peak of the spectrum of modulated light output from the directly modulated laser.

    摘要翻译: 在包括直接调制激光器和设置在直接调制激光器的后级上的波长滤波器的光发射机中,波长滤波器具有用于输入从直接调制的激光器输出的调制光的调制光输入端口,滤波器透射光输出 用于输出调制光中包括在滤波器传输频带中的波长的光作为滤波器透射光的端口,以及与调制光输入端口和滤光透射光输出端口分离设置的滤光器截止光输出端口,并输出具有波长 被包含在作为滤波器截止光的调制光中的滤波器截止频带中,并且滤波器传输频带的峰值被设置在从直接调制的激光器输出的调制光谱的峰值的较短波侧。

    Mirror device and optical apparatus
    83.
    发明授权
    Mirror device and optical apparatus 有权
    镜装置和光学装置

    公开(公告)号:US07706049B2

    公开(公告)日:2010-04-27

    申请号:US12033959

    申请日:2008-02-20

    IPC分类号: G02B26/00

    摘要: The present mirror device for suppressing PDL on the assumption of multiple modes of angles of input light and output light to movable mirrors with respect to the crystal axis of a crystal member at the time light passes through the crystal member. The mirror device includes a mirror system 2 and a flat-shaped crystal member 3 which is arranged in such a manner that a first angle is not larger than a second angle. The crystal member is constructed in such a manner that a third angle is substantially equal to a half of a fourth angle.

    摘要翻译: 本反射镜装置用于在时间光通过晶体部件的情况下假定输入光的多个角度和输出光相对于晶体部件的晶轴相对于可动反射镜的抑制PDL。 镜装置包括镜子系统2和平面状的晶体构件3,其以第一角度不大于第二角度的方式布置。 晶体构件的构造使得第三角度基本上等于第四角度的一半。

    APPARATUS AND METHOD FOR READING COLOR CHART AND COMPUTER-READABLE STORAGE MEDIUM
    84.
    发明申请
    APPARATUS AND METHOD FOR READING COLOR CHART AND COMPUTER-READABLE STORAGE MEDIUM 有权
    读取彩色图和计算机可读存储介质的装置和方法

    公开(公告)号:US20090316234A1

    公开(公告)日:2009-12-24

    申请号:US12483182

    申请日:2009-06-11

    申请人: Tsuyoshi Yamamoto

    发明人: Tsuyoshi Yamamoto

    IPC分类号: H04N1/46

    CPC分类号: H04N1/6033

    摘要: Provided is a method for automatically determining an error of a user operation or a calorimeter caused when the calorimeter is manually slid to measure the colors of color patches on a row-by-row basis. Also provided is a method capable of determining an error or a scanning direction using a feature value obtained from the calorimetric values without using fixed reference and threshold values for each patch.

    摘要翻译: 提供了一种用于自动确定当手动滑动量热计以在逐行基础上测量色标颜色时引起的用户操作或量热计的误差的方法。 还提供了一种能够使用从量热值获得的特征值来确定误差或扫描方向而不使用每个贴片的固定参考值和阈值的方法。

    Optical switch and MEMS package
    85.
    发明授权
    Optical switch and MEMS package 有权
    光开关和MEMS封装

    公开(公告)号:US07580599B2

    公开(公告)日:2009-08-25

    申请号:US12153820

    申请日:2008-05-23

    IPC分类号: G02B6/34 G02B6/35

    摘要: An optical switch switches ports through which a beam is input and output and includes an optical system through which the beam passes; a movable reflector that is enclosed in a casing and reflects, at a variable angle, the beam that has passed through the optical system; and a transmissive window that is disposed in the casing at a position through which the beam passes, is made of a uniaxial crystal, and obtains a phase difference with respect to the beam passing therethrough having a wavelength λ. The phase difference is λ/4 times a positive odd integer and results from a setting of an orientation of a crystal axis and a thickness of the transmissive window.

    摘要翻译: 光开关切换输入和输出光束的端口,并包括光束通过的光学系统; 可移动反射器,其被封装在壳体中并以可变的角度反射已经通过光学系统的光束; 并且在光束通过的位置处设置在壳体中的透射窗由单轴晶体制成,并且获得相对于通过其的具有波长λ的光束的相位差。 相位差为正奇数的λ/ 4倍,并且是由晶轴的取向和透射窗的厚度的设定产生的。

    Optical switch and MEMS package
    86.
    发明申请
    Optical switch and MEMS package 有权
    光开关和MEMS封装

    公开(公告)号:US20080317405A1

    公开(公告)日:2008-12-25

    申请号:US12153820

    申请日:2008-05-23

    IPC分类号: G02B6/26 G02B26/08

    摘要: An optical switch switches ports through which a beam is input and output and includes an optical system through which the beam passes; a movable reflector that is enclosed in a casing and reflects, at a variable angle, the beam that has passed through the optical system; and a transmissive window that is disposed in the casing at a position through which the beam passes, is made of a uniaxial crystal, and obtains a phase difference with respect to the beam passing therethrough having a wavelength λ. The phase difference is λ/4 times a positive odd integer and results from a setting of an orientation of a crystal axis and a thickness of the transmissive window.

    摘要翻译: 光开关切换输入和输出光束的端口,并包括光束通过的光学系统; 可移动反射器,其被封装在壳体中并以可变的角度反射已经通过光学系统的光束; 并且在光束通过的位置处设置在壳体中的透射窗由单轴晶体制成,并且获得相对于通过其的具有波长λ的光束的相位差。 相位差为正奇数的λ/ 4倍,并且是由晶轴的取向和透射窗的厚度的设定产生的。

    Method of manufacturing semiconductor device including trench-forming process
    87.
    发明申请
    Method of manufacturing semiconductor device including trench-forming process 审中-公开
    包括沟槽形成工艺的半导体器件的制造方法

    公开(公告)号:US20080305644A1

    公开(公告)日:2008-12-11

    申请号:US12153634

    申请日:2008-05-22

    IPC分类号: H01L21/306

    CPC分类号: H01L21/76232 H01L21/3065

    摘要: In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching is removed by an isotropic dry etching. The isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen. A temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom in the isotropic dry etching.

    摘要翻译: 在半导体器件的制造方法中,通过各向异性干蚀刻在半导体衬底中形成沟槽,以使其纵横比大于等于10,并且在壁和底部产生的损伤层 通过各向同性干蚀刻除去由于各向异性干蚀刻的沟槽。 使用包含碳和氟的第一气体和包括氧的第二气体进行各向同性干蚀刻。 控制半导体衬底的温度,使得在各向同性干蚀刻中从壁和底部的整个表面除去损伤层。

    Wavelength selective switch
    88.
    发明申请
    Wavelength selective switch 有权
    波长选择开关

    公开(公告)号:US20080239444A1

    公开(公告)日:2008-10-02

    申请号:US12068351

    申请日:2008-02-05

    IPC分类号: G02B26/08

    摘要: A wavelength selective switch for suppressing degradation of pass band characteristics when the temperature rises. The wavelength selective switch includes a spectroscopic element for separating input light and providing angular dispersion depending on wavelengths, a collective lens for gathering light output from the spectroscopic element, and a movable reflection block which includes a plurality of mirrors arranged in the direction of angular dispersion made by the spectroscopic element, changes the angles of the mirrors in a direction differing from the direction of angular dispersion, and reflects the light coming from the collective lens. The collective lens is fixed at one end with respect to the direction of angular dispersion, expands with heat in a direction in which it is not fixed when the temperature rises, and outputs the light in a direction opposite to the direction in which the angle of light output from the spectroscopic element changes.

    摘要翻译: 一种用于当温度升高时抑制通带特性劣化的波长选择开关。 波长选择开关包括用于分离输入光并提供取决于波长的角度色散的分光元件,用于聚集从分光元件输出的光的集体透镜,以及可移动反射块,其包括沿角度分散方向布置的多个反射镜 由分光元件制成的反射镜的角度沿与角度分散方向不同的方向改变,并且反射来自聚光透镜的光。 集体透镜相对于角度分散的方向固定在一端,当温度升高时,其在不固定的方向上以热量方式膨胀,并且沿与该角度的方向相反的方向输出光 来自分光元件的光输出变化。

    Silicon carbide semiconductor device
    89.
    发明申请
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号:US20080224150A1

    公开(公告)日:2008-09-18

    申请号:US12073837

    申请日:2008-03-11

    IPC分类号: H01L29/24

    摘要: The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.

    摘要翻译: SiC半导体器件包括由碳化硅制成的第一导电类型的衬底,由碳化硅制成的第一导电类型的漂移层,漂移层比衬底掺杂少,由衬底的一部分构成的单元部分 以及漂移层的一部分,由基板的另一部分和漂移层的另一部分构成的圆周部分,周向部分形成为围绕电池部分,以及形成在第二导电类型的RESURF层 漂移层的表面部分,以便位于圆周部分中。 RESURF层由具有不同杂质浓度的第一和第二RESURF层构成,第二RESURF层与第一RESURF层的外周接触并延伸到电池单元的周围。

    Collimator array and method for manufacturing the same
    90.
    发明授权
    Collimator array and method for manufacturing the same 失效
    准直器阵列及其制造方法

    公开(公告)号:US07424183B2

    公开(公告)日:2008-09-09

    申请号:US11041435

    申请日:2005-01-25

    IPC分类号: G02B6/32

    摘要: A collimator array includes a substrate; a plurality of lenses formed on one face of the substrate; and a plurality of projecting parts, each of which is formed on a portion corresponding to the lens on the other face of the substrate, respectively and is fusion-connected to an optical fiber, respectively; wherein an area of the fusion-connected face of the projecting part with respect to the optical fiber is set to be larger than a cross sectional area of the optical fiber. Thereby, it is possible to provide a collimator having fewer variations in an output beam angle and a diameter of an output beam and having excellent strength, and a method for manufacturing the same.

    摘要翻译: 准直器阵列包括基板; 形成在所述基板的一个面上的多个透镜; 以及分别形成在与所述基板的另一面上的所述透镜相对应的部分上的多个突出部分,并分别与光纤熔接; 其中所述突出部分的所述熔接面相对于所述光纤的面积被设定为大于所述光纤的截面面积。 由此,能够提供输出光束角度和输出光束的直径变化较小,强度优异的准直仪及其制造方法。