摘要:
A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion. Each longitudinal rib (22) is formed with a through hole (221) communicating an outside and an inner side of each connection member (13) by expanding a folded edge of the overlapped portion, the through hole is shortened by cutting the plate of the pipe surrounding an opening of the through hole (221).
摘要:
A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.
摘要:
A vial feed device is equipped with a feed arm, which is positioned between a vial tray and an oven and below either of them and having a feeding housing unit and a cooling housing unit, and a vial up-and-down moving mechanism for placing and removing vials in and from vial tray and oven. Feed arm is rotationally driven by a drive motor to move a feeding housing unit, a cooling housing unit and up-and-down moving mechanism toward vial tray or oven. High-temperature vials in oven are housed in cooling housing unit until cooling time T elapses. After cooling time T elapses, cooling housing unit is moved to a lower part of vial tray by feed arm, to be returned to vial tray by up-and-down moving mechanism.
摘要:
In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.
摘要:
An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要:
A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion. Each longitudinal rib (22) is formed with a through hole (221) communicating an outside and an inner side of each connection member (13) by expanding a folded edge of the overlapped portion, the through hole is shortened by cutting the plate of the pipe surrounding an opening of the through hole (221).
摘要:
A semiconductor device includes a base P region, a source N+ region, and a drain N+ region formed in a surface layer portion on a principal surface in an N− silicon layer. In the surface layer portion on the principal surface, an N well region is formed deeper than the drain N+ region in a region including the drain N+ region and is in contact with the base P region. A trench is formed so as to penetrate the base P region in a direction toward the drain N+ region from the source N+ region as a planar structure. A gate electrode is formed via a gate insulating film in the inside of the trench.
摘要:
A pedal device for a vehicle in which a support member for rotatably supporting a pedal arm is mounted on a dash panel positioned forward of a deck cross member. The pedal arm is pivotally attached to the support member by a pedal-rotating shaft inserted through a pedal shaft hole formed in the support member, and this support member has a pivotal impact lever which is provided above the pedal arm and forward of the deck cross member and brought down toward the pedal-rotating shaft.
摘要:
An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要:
In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching is removed by an isotropic dry etching. The isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen. A temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom in the isotropic dry etching.