Chassis Frame
    1.
    发明申请
    Chassis Frame 有权
    底盘框架

    公开(公告)号:US20140049032A1

    公开(公告)日:2014-02-20

    申请号:US14113643

    申请日:2012-04-27

    IPC分类号: B62D24/00

    摘要: A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion. Each longitudinal rib (22) is formed with a through hole (221) communicating an outside and an inner side of each connection member (13) by expanding a folded edge of the overlapped portion, the through hole is shortened by cutting the plate of the pipe surrounding an opening of the through hole (221).

    摘要翻译: 一种底盘框架(1),其包括连接构件(13),每个连接构件由连接到车身框架的管道构成。 每个连接构件(13)在管的端部设置有附接部分(2)。 安装部分(2)包括通过使管的一端平坦地破碎而形成的平坦的安装面(21),以形成重叠的管道的重叠部分。 平面安装面(21)设置在重叠部分的左右方向的中心。 管的端部的形状在其截面上是大致门形状。 安装部分(2)还包括从平坦的安装面(21)弯曲到重叠部分的左右两侧的纵向肋(22)。 每个纵向肋(22)形成有通过扩大重叠部分的折叠边缘而连通每个连接构件(13)的外侧和内侧的通孔(221),通过将板 围绕通孔(221)的开口的管道。

    Chromatograph Device
    3.
    发明申请
    Chromatograph Device 有权
    色谱仪

    公开(公告)号:US20140026757A1

    公开(公告)日:2014-01-30

    申请号:US13559415

    申请日:2012-07-26

    IPC分类号: B01D53/02

    摘要: A vial feed device is equipped with a feed arm, which is positioned between a vial tray and an oven and below either of them and having a feeding housing unit and a cooling housing unit, and a vial up-and-down moving mechanism for placing and removing vials in and from vial tray and oven. Feed arm is rotationally driven by a drive motor to move a feeding housing unit, a cooling housing unit and up-and-down moving mechanism toward vial tray or oven. High-temperature vials in oven are housed in cooling housing unit until cooling time T elapses. After cooling time T elapses, cooling housing unit is moved to a lower part of vial tray by feed arm, to be returned to vial tray by up-and-down moving mechanism.

    摘要翻译: 小瓶进料装置配备有进料臂,该进料臂位于小瓶托盘和烤箱之间并且在其下方,并具有进料壳体单元和冷却壳体单元,以及用于放置的小瓶上下移动机构 并从小瓶托盘和烤箱中取出小瓶。 进给臂由驱动马达旋转驱动,以将进给壳体单元,冷却壳体单元和上下移动机构移动到小瓶托盘或烤箱。 烤箱中的高温小瓶容纳在冷却壳体单元中,直到冷却时间T过去。 经过冷却时间T后,冷却壳体单元通过进料臂移动到小瓶托盘的下部,通过上下移动机构返回到小瓶托盘。

    Chassis frame
    6.
    发明授权
    Chassis frame 有权
    底盘框架

    公开(公告)号:US08770605B2

    公开(公告)日:2014-07-08

    申请号:US14113643

    申请日:2012-04-27

    IPC分类号: B62D21/02 B60G21/055

    摘要: A chassis frame (1) including connection members (13) each configured by a pipe that is connected to a vehicle body frame. Each connection member (13) is provided with an attachment part (2) at an end of the pipe. The attachment part (2) includes a flat attachment face (21) formed by flatly crashing an end of the pipe to form the overlapped portion where a plate of the pipe is overlapped. The flat attachment face (21) is provided on a center in left and right direction of the overlapped portion. A shape of the end of the pipe is a substantially gate shape in its cross section. The attachment part (2) further includes longitudinal ribs (22) bending from the flat attachment face (21) to both left and right sides of the overlapped portion. Each longitudinal rib (22) is formed with a through hole (221) communicating an outside and an inner side of each connection member (13) by expanding a folded edge of the overlapped portion, the through hole is shortened by cutting the plate of the pipe surrounding an opening of the through hole (221).

    摘要翻译: 一种底盘框架(1),其包括连接构件(13),每个连接构件由连接到车身框架的管道构成。 每个连接构件(13)在管的端部设置有附接部分(2)。 安装部分(2)包括通过使管的一端平坦地破碎而形成的平坦的安装面(21),以形成重叠的管道的重叠部分。 平面安装面(21)设置在重叠部分的左右方向的中心。 管的端部的形状在其截面上是大致门形状。 安装部分(2)还包括从平坦的安装面(21)弯曲到重叠部分的左右两侧的纵向肋(22)。 每个纵向肋(22)形成有通过扩大重叠部分的折叠边缘而连通每个连接构件(13)的外侧和内侧的通孔(221),通过将板 围绕通孔(221)的开口的管道。

    PEDAL DEVICE
    8.
    发明申请
    PEDAL DEVICE 审中-公开
    PEDAL设备

    公开(公告)号:US20100089198A1

    公开(公告)日:2010-04-15

    申请号:US12448567

    申请日:2007-12-26

    IPC分类号: B62M3/08

    摘要: A pedal device for a vehicle in which a support member for rotatably supporting a pedal arm is mounted on a dash panel positioned forward of a deck cross member. The pedal arm is pivotally attached to the support member by a pedal-rotating shaft inserted through a pedal shaft hole formed in the support member, and this support member has a pivotal impact lever which is provided above the pedal arm and forward of the deck cross member and brought down toward the pedal-rotating shaft.

    摘要翻译: 一种用于车辆的踏板装置,其中用于可旋转地支撑踏板臂的支撑构件安装在位于甲板横梁前方的仪表板上。 踏板臂通过插入通过形成在支撑构件中的踏板轴孔的踏板旋转轴枢转地附接到支撑构件,并且该支撑构件具有设置在踏板臂上方的枢转冲击杆,并且在甲板十字架的前方 并向踏板转轴转动。

    Method of manufacturing semiconductor device including trench-forming process
    10.
    发明申请
    Method of manufacturing semiconductor device including trench-forming process 审中-公开
    包括沟槽形成工艺的半导体器件的制造方法

    公开(公告)号:US20080305644A1

    公开(公告)日:2008-12-11

    申请号:US12153634

    申请日:2008-05-22

    IPC分类号: H01L21/306

    CPC分类号: H01L21/76232 H01L21/3065

    摘要: In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a damaged layer that is generated in a wall and a bottom of the trench due to the anisotropic dry etching is removed by an isotropic dry etching. The isotropic dry etching is performed with a first gas including carbon and fluorine and a second gas including oxygen. A temperature of the semiconductor substrate is controlled so that the damaged layer is removed from a whole surface of the wall and the bottom in the isotropic dry etching.

    摘要翻译: 在半导体器件的制造方法中,通过各向异性干蚀刻在半导体衬底中形成沟槽,以使其纵横比大于等于10,并且在壁和底部产生的损伤层 通过各向同性干蚀刻除去由于各向异性干蚀刻的沟槽。 使用包含碳和氟的第一气体和包括氧的第二气体进行各向同性干蚀刻。 控制半导体衬底的温度,使得在各向同性干蚀刻中从壁和底部的整个表面除去损伤层。