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公开(公告)号：US07781271B2
公开(公告)日：2010-08-24
申请号：US11699023
申请日：2007-01-29
CPC分类号： H01L29/66757 , B60R25/066 , H01L21/223 , H01L27/14692 , Y10T29/41
摘要： A process for laser processing an article which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof said article being made from a material selected from a semiconductor a metal an insulator and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity thereby allowing the impurity to physically or chemically diffuse into combine with or intrude into said article.The present invention also provides an apparatus for use in a laser processing process characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample a window made of a material sufficiently transparent to transmit a laser beam a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber and a means to move said chamber synchronously with the laser irradiation.
摘要翻译： 一种用于激光处理制品的方法，包括：将待掺杂杂质的所述制品加热至不高于其所述制品的熔点的温度，所述熔点由选自金属绝缘体的半导体及其组合的材料制成; 并在包含所述杂质的反应性气体气氛中将激光束照射到制品上，从而允许杂质物理或化学地扩散成与所述制品相结合或侵入所述制品。 本发明还提供了一种用于激光加工工艺的设备，其特征在于它具有内部样品保持器和用作样品的加热装置的装置，该窗口由足够透明的材料制成，该窗口透射激光束 包括真空排出装置的腔室和用于引入含有杂质元素的反应气体的装置，所述激光装置以脉冲模式操作以将激光束照射到所述腔室，以及与激光照射同步地移动所述腔室的装置。
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公开(公告)号：US07649227B2
公开(公告)日：2010-01-19
申请号：US11594759
申请日：2006-11-09
IPC分类号： H01L27/01
CPC分类号： H01L27/1274 , G02F1/13454 , G02F2001/136245 , H01L21/8213 , H01L29/02 , H01L29/78603 , H01L29/78675 , H01L29/78687 , H01L29/78696
摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region.A process for fabricating the device is also disclosed.
摘要翻译： 一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或者所述区域包括具有比所述沟道区大的带隙的材料。 还公开了一种用于制造该器件的工艺。
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公开(公告)号：US20070119815A1
公开(公告)日：2007-05-31
申请号：US11699023
申请日：2007-01-29
CPC分类号： H01L29/66757 , B60R25/066 , H01L21/223 , H01L27/14692 , Y10T29/41
摘要： A process for laser processing an article, which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
摘要翻译： 一种激光加工制品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体， 及其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空排气装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。
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公开(公告)号：US07169657B2
公开(公告)日：2007-01-30
申请号：US10724126
申请日：2003-12-01
CPC分类号： H01L29/66757 , B60R25/066 , H01L21/223 , H01L27/14692 , Y10T29/41
摘要： A process for laser processing an article which comprises: heating the intended article to be doped with an impurity to a temperature not higher than the melting point thereof, said article being made from a material selected from a semiconductor, a metal, an insulator, and a combination thereof; and irradiating a laser beam to the article in a reactive gas atmosphere containing said impurity, thereby allowing the impurity to physically or chemically diffuse into, combine with, or intrude into said article. The present invention also provides an apparatus for use in a laser processing process, characterized by that it is provided with an internal sample holder and a device which functions as a heating means of the sample, a window made of a material sufficiently transparent to transmit a laser beam, a chamber comprising a vacuum evacuation device and a device for introducing a reactive gas containing an impurity element, a laser apparatus operating in a pulsed mode to irradiate a laser beam to said chamber, and a means to move said chamber synchronously with the laser irradiation.
摘要翻译： 一种用于激光处理物品的方法，包括：将待掺杂杂质的预期制品加热到不高于其熔点的温度，所述制品由选自半导体，金属，绝缘体和 其组合; 并在包含所述杂质的反应性气体气氛中向所述制品照射激光束，从而使所述杂质物理或化学扩散到所述制品中，与之结合或侵入所述制品。 本发明还提供了一种在激光加工工艺中使用的装置，其特征在于，其具有内部样品保持器和用作样品加热装置的装置，由足够透明的材料制成的窗口， 激光束，包括真空抽出装置的腔室和用于引入含有杂质元素的反应性气体的装置，以脉冲模式操作以将激光束照射到所述腔室的激光装置，以及与所述腔室同步地移动所述腔室的装置 激光照射。
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公开(公告)号：US20050181583A1
公开(公告)日：2005-08-18
申请号：US11105404
申请日：2005-04-14
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02675 , H01L21/02686 , H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10T29/41
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19原子的浓度熔化含有碳，氮和氧的非晶半导体膜。 通过照射等效于激光束的激光束或高强度光，可以通过照射激光束或低强度光 激光束到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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公开(公告)号：US06709907B1
公开(公告)日：2004-03-23
申请号：US09225559
申请日：1999-01-05
IPC分类号： H01L21336
CPC分类号： H01L27/1274 , G02F1/13454 , G02F2001/136245 , H01L21/8213 , H01L29/02 , H01L29/78603 , H01L29/78675 , H01L29/78687 , H01L29/78696
摘要： An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or a semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region. A process for fabricating the device is also disclosed.
摘要翻译： 一种绝缘栅极半导体器件，包括其上设置有源极和漏极区域的绝缘体衬底; 沟道区域并入所述源极和所述漏极区域之间，所述沟道区域包括多晶，单晶或半非晶半导体材料; 以及设置在所述沟道区下面的区域，所述区域包含含有与作为主要成分的沟道区相同的材料的非晶材料，或所述区域包括具有比所述沟道区大的带隙的材料。 该装置也被公开。
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公开(公告)号：US06655767B2
公开(公告)日：2003-12-02
申请号：US09356376
申请日：1999-07-19
IPC分类号： G02F11333
CPC分类号： H01L29/66757 , B60R25/066 , H01L21/223 , H01L27/14692 , Y10T29/41
摘要： An active matrix display device with a semiconductor layer, an organic layer above the semiconductor layer and a pixel electrode and a conductor layer thereon connected to the source/drain region(s).
摘要翻译： 具有半导体层的有源矩阵显示装置，半导体层上方的有机层和连接到源/漏区的像素电极及其导体层。
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公开(公告)号：US06413842B2
公开(公告)日：2002-07-02
申请号：US09848307
申请日：2001-05-04
IPC分类号： H01L2120
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/78654 , H01L29/78675
摘要： A method for improving the reliability and yield of a thin film transistor by controlling the crystallinity thereof. The method comprises the steps of forming a gate electrode on an island amorphous silicon film, injecting an impurity using the gate electrode as a mask, forming a coating film containing at least one of nickel, iron, cobalt, platinum and palladium so that it adheres to parts of the impurity regions, and annealing it at a temperature lower than the crystallization temperature of pure amorphous silicon to advance the crystallization starting therefrom and to crystallize the impurity regions and channel forming region.
摘要翻译： 通过控制其结晶度来提高薄膜晶体管的可靠性和产率的方法。 该方法包括以下步骤：在岛状非晶硅膜上形成栅电极，使用栅电极作为掩模注入杂质，形成含有镍，铁，钴，铂和钯中的至少一种的涂膜，使其粘附 到部分杂质区域，并在低于纯非晶硅的结晶温度的温度下进行退火以促进从其开始的结晶，并使杂质区域和沟道形成区域结晶。
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89.发明授权Semiconductor material and method for forming the same and thin film transistor 失效用于形成相同薄膜晶体管的半导体材料和方法公开(公告)号：US06271066B1
公开(公告)日：2001-08-07
申请号：US08095172
申请日：1993-07-23
IPC分类号： H01L2184
CPC分类号： H01L29/78675 , H01L29/16
摘要： A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019 atoms·cm−3 or lower, preferably 1×1019 atoms·cm−3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下步骤制造，所述方法包括：将激光束等效于激光的激光束或高强度光照射到含有碳，氮和氧的非晶硅膜中， 浓度为5×1019原子％-3或更低，优选为1×1019原子％-3或更低，而不熔化非晶硅膜。 本发明提供了具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管等薄膜半导体器件，从而改善器件特性。
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90.发明授权Semiconductor material and method for forming the same and thin film transistor 失效用于形成相同薄膜晶体管的半导体材料和方法
公开(公告)号：US5962869A
公开(公告)日：1999-10-05
申请号：US183800
申请日：1994-01-21
CPC分类号： H01L21/2026 , H01L31/208 , Y02E10/50 , Y02P70/521
摘要： A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.multidot.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.
摘要翻译： 一种半导体材料及其形成方法，所述半导体材料通过以下方法制备，所述方法包括以5×10 19 atoms×cm 3以下，优选1×10 19原子×3 -3的浓度熔融其中含有碳，氮和氧的非晶半导体膜 或更低，通过将相当于激光束的激光束或高强度光照射到所述非晶半导体膜，然后使这样熔融的非晶硅膜重结晶。 本发明提供具有优异的再现性的高迁移率的薄膜半导体，所述半导体材料可用于制造薄膜晶体管，例如改善器件特性的薄膜晶体管。
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