公开(公告)号：US10347486B1

公开(公告)日：2019-07-09

申请号：US15846942

申请日：2017-12-19

Applicant: International Business Machines Corporation

Inventor： Ekmini Anuja De Silva ,  Dario Goldfarb ,  Nelson Felix ,  Daniel Corliss ,  Rudy J. Wojtecki

IPC: G03F7/09 ,  G03F7/20 ,  G03F7/26 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate, the patterning material film stack including a resist layer formed over one or more additional layers, and forming a metal-containing top coat over the resist layer. The method further includes exposing the multi-layer patterning material film stack to patterning radiation through the metal-containing top coat to form a desired pattern in the resist layer, removing the metal-containing top coat, developing the pattern formed in the resist layer, etching at least one underlying layer in accordance with the developed pattern, and removing remaining portions of the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.

公开(公告)号：US20190206722A1

公开(公告)日：2019-07-04

申请号：US15861774

申请日：2018-01-04

Applicant: International Business Machines Corporation

Inventor： Ekmini A. De Silva ,  Nelson Felix ,  Indira Seshadri ,  Stuart A. Sieg

IPC: H01L21/762 ,  H01L23/544 ,  H01L21/027 ,  H01L21/48 ,  H01L21/768

CPC classification number: H01L21/76294 ,  B82Y40/00 ,  H01L21/0272 ,  H01L21/4885 ,  H01L21/768 ,  H01L23/544 ,  H01L2223/54426

Abstract: A tunable amorphous silicon layer for use with multilayer patterning stacks can be used to maximize transparency and minimize reflections so as to improve overlay metrology contrast. By increasing the hydrogen content in the amorphous silicon layer, the extinction coefficient (k) value and the refractive index (n) value can be decreased to desired values. Methods for improving overlay metrology contrast with the tunable amorphous silicon layer are disclosed.

公开(公告)号：US20190196340A1

公开(公告)日：2019-06-27

申请号：US15850192

申请日：2017-12-21

Applicant: International Business Machines Corporation

Inventor： Ekmini Anuja De Silva ,  Indira Seshadri ,  Jing Guo ,  Ashim Dutta ,  Nelson Felix

IPC: G03F7/20 ,  H01L21/308 ,  G03F1/22 ,  H01L21/027

CPC classification number: G03F7/70033 ,  G03F1/22 ,  H01L21/027 ,  H01L21/3081

Abstract: A lithographic patterning method includes forming a multi-layer patterning material film stack on a semiconductor substrate. Forming the patterning material film stack more particularly includes forming a hard mask layer and forming a resist layer over the hard mask layer. The hard mask layer is configured to support selective deposition of a metal-containing layer on the resist layer, the selective deposition of the metal-containing layer on the resist layer occurring after pattern development. The method further includes exposing the multi-layer patterning material film stack to patterning radiation to form a desired pattern in the resist layer, developing the pattern formed in the resist layer, and selectively depositing the metal-containing layer on the developed pattern in the resist layer. The selective deposition avoids deposition of the metal-containing layer on portions of the hard mask layer corresponding to respective openings in the resist layer.