AUTOMATIC LOAD REBALANCING OF A WRITE GROUP
    81.
    发明申请

    公开(公告)号:US20190065093A1

    公开(公告)日:2019-02-28

    申请号:US16170881

    申请日:2018-10-25

    IPC分类号: G06F3/06 G06F11/10 G06F11/34

    摘要: A method of automatic load rebalancing includes determining that a new storage device was added to a storage array comprising a plurality of storage devices, wherein the new storage device is distinct from the plurality of storage devices. The method further includes, in response to the determining, identifying a first shard on a first storage device of the plurality of storage devices, wherein the first storage device has a fullness metric that is equal to or exceeds a fullness threshold. The method further includes moving, by a processing device of a storage array controller of the storage array, the first shard from the first storage device to the new storage device.

    Operating system management for direct flash over fabric storage devices

    公开(公告)号:US10216447B1

    公开(公告)日:2019-02-26

    申请号:US15390123

    申请日:2016-12-23

    IPC分类号: G06F3/06

    摘要: Exposing a geometry of a storage device, including: sending, by the storage device, information describing the layout of memory in the storage device; receiving, by the storage device, a write request, the write request associated with an amount of data sized in dependence upon the layout of memory in the storage device; and writing, by the storage device, the data to a memory unit, the data written to a location within the memory unit in dependence upon the layout of memory in the storage device.

    Page writes for triple level cell flash memory

    公开(公告)号:US10141050B1

    公开(公告)日:2018-11-27

    申请号:US15498979

    申请日:2017-04-27

    IPC分类号: G11C11/34 G11C11/56 G11C16/10

    摘要: A method for page writes for triple or higher level cell flash memory is provided. The method includes receiving data in a storage system, from a client that is agnostic of page write requirements for triple or higher level cell flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages. The method includes accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple or higher level cell flash memory in the storage system. The method includes writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or the higher level cell, flash memory in the storage system as an atomic write.

    BLOCK CONSOLIDATION IN A DIRECT-MAPPED FLASH STORAGE SYSTEM

    公开(公告)号:US20180173442A1

    公开(公告)日:2018-06-21

    申请号:US15665134

    申请日:2017-07-31

    IPC分类号: G06F3/06

    摘要: In one implementation, a method includes maintaining a list of available allocation units across a plurality of flash devices of a flash storage system, wherein the flash devices map erase blocks as directly addressable storage, and wherein erase blocks are categorized by the flash storage system as available for use, in use, or unusable, and wherein at least a portion of an erase block can be assigned as an allocation unit. The method further includes receiving data from a plurality of sources, wherein the data is associated with processing a dataset, the dataset comprising multiple file systems and associated metadata. The method further includes determining a plurality of subsets of the data such that each subset is capable of being written in parallel with the remaining subsets, mapping each subset of the plurality of subsets to an available allocation unit, and writing the plurality of subsets in parallel.