公开(公告)号：US20140037861A1

公开(公告)日：2014-02-06

申请号：US14048080

申请日：2013-10-08

申请人： Tai Min ,  Tang Yuhui ,  Lijie Guan

发明人： Tai Min ,  Tang Yuhui ,  Lijie Guan

IPC分类号： G11B5/23

CPC分类号： G11B5/232 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/3116 ,  H01F10/3272 ,  Y10T428/1186

摘要： A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.

摘要翻译： 制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性的单片层，反写磁耦合跨写写间隙 材料。 耦合通过增强写入场的垂直分量及其梯度来提高写入器的写入性能。 提供了作者的制作方法。

公开(公告)号：US08564903B2

公开(公告)日：2013-10-22

申请号：US13068638

申请日：2011-05-16

申请人： Tai Min ,  Yuhui Tang ,  Lijie Guan ,  Min Li

发明人： Tai Min ,  Yuhui Tang ,  Lijie Guan ,  Min Li

IPC分类号： G11B5/127

CPC分类号： G11B5/232 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/3116 ,  H01F10/3272 ,  Y10T428/1186

摘要： A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.

摘要翻译： 制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性单片层 材料。 耦合通过增强写入场的垂直分量及其梯度来提高写入器的写入性能。 提供了作者的制作方法。

公开(公告)号：US20120295133A1

公开(公告)日：2012-11-22

申请号：US13068638

申请日：2011-05-16

申请人： Tai Min ,  Yuhui Tang ,  Lijie Guan ,  Min Li

发明人： Tai Min ,  Yuhui Tang ,  Lijie Guan ,  Min Li

IPC分类号： G11B5/187 ,  H01F1/047

CPC分类号： G11B5/232 ,  G11B5/1278 ,  G11B5/235 ,  G11B5/3116 ,  H01F10/3272 ,  Y10T428/1186

摘要： A perpendicular magnetic recording (PMR) head is fabricated with main pole and a trailing edge shield antiferromagnetically coupled across a write gap by either having the write gap layer formed as a synthetic antiferromagnetic tri-layer (SAF) or formed as a monolithic layer of antiferromagnetic material. The coupling improves the write performance of the writer by enhancing the perpendicular component of the write field and its gradient. Methods of fabricating the writer are provided.

摘要翻译： 制造垂直磁记录（PMR）头，其主磁极和后沿屏蔽通过将写间隙层形成为合成反铁磁三层（SAF）或形成为反铁磁性的单片层，反写磁耦合跨写写间隙 材料。 耦合通过增强写入场的垂直分量及其梯度来改善写入器的写入性能。 提供了作者的制作方法。

公开(公告)号：US20120295132A1

公开(公告)日：2012-11-22

申请号：US13068652

申请日：2011-05-16

申请人： Tai Min ,  Yuhui Tang ,  Suping Song ,  Lijie Guan

发明人： Tai Min ,  Yuhui Tang ,  Suping Song ,  Lijie Guan

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  Y10T428/115 ,  Y10T428/1186

摘要： A perpendicular magnetic recording (PMR) head is fabricated with a main pole and a trailing edge shield having surfaces and interior portions that may include synthetic antiferromagnetic multi-layered superlattices (SAFS) formed on and/or within them respectively. The SAFS, which are multilayers formed as periodic multiples of antiferromagnetically coupled tri-layers, provide a mechanism for enhancing the component of the writing field that is vertical to the magnetic medium by exchange coupling to the magnetization of the pole and shield and constraining the directions of their magnetizations to lie within the film plane of the SAFS.

摘要翻译： 制造具有主极和后缘屏蔽的垂直磁记录（PMR）头，其具有可分别形成在其上和/或内的合成反铁磁多层超晶格（SAFS）的表面和内部部分。 作为形成为反铁磁耦合三层的周期倍数的多层的SAFS提供了一种用于通过交换耦合到磁极和屏蔽的磁化并限制方向来增强与磁介质垂直的写入场的分量的机制 的磁化位于SAFS的膜平面内。

公开(公告)号：US20120127611A1

公开(公告)日：2012-05-24

申请号：US12927797

申请日：2010-11-24

申请人： Tai Min

发明人： Tai Min

IPC分类号： G11B5/17

CPC分类号： G11B5/1278 ,  G11B5/3116

摘要： A shield design for a magnetic write head is described that eliminates the far-field WATE problem while still maintaining side shielding ability. This is achieved by moving all but the central sections of the three shields (LS, SS, and WS) and, optionally, the top yoke a short distance further away from the recording medium than the ABS.

摘要翻译： 描述了用于磁写头的屏蔽设计，其在保持侧屏蔽能力的同时消除了远场WATE问题。 这通过移动三个屏蔽件（LS，SS和WS）中的所有中心部分，并且可选地将顶部磁轭移动到比ABS更远离记录介质的距离处。

公开(公告)号：US07994597B2

公开(公告)日：2011-08-09

申请号：US12381567

申请日：2009-03-13

申请人： Tai Min

发明人： Tai Min

IPC分类号： G11C11/02

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange coupling between this antiferromagnetic layer and the free layer. When writing data into the free layer, the control valve layer is heated above its curie point thereby temporarily uncoupling the free layer from said antiferromagnetic layer. Once the control valve cools, the free layer magnetization is once again pinned by the antiferromagnetic layer.

摘要翻译： 磁阻存储元件中的自由层由反铁磁层固定而稳定。 控制阀层在该反铁磁层和自由层之间提供交换耦合。 当将数据写入自由层时，将控制阀层加热到其居里点以上，从而使自由层与所述反铁磁层暂时脱离。 一旦控制阀冷却，自由层磁化又被反铁磁层固定住。

公开(公告)号：US07929370B2

公开(公告)日：2011-04-19

申请号：US12313708

申请日：2008-11-24

申请人： Tai Min

发明人： Tai Min

IPC分类号： G11C11/06

CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： We describe the structure and method of formation of a STT MTJ or GMR MRAM cell element that utilizes transfer of spin torque as a mechanism for changing the magnetization direction of a free layer. The critical current is reduced by constructing the free layer as a lamination comprising two ferromagnetic layers sandwiching a coupling valve layer. When the Curie temperature of the coupling valve layer is above the temperature of the cell, the two ferromagnetic layers are exchange coupled in parallel directions of their magnetization. When the coupling valve layer is above its Curie temperature, it no longer exchange couples the layers and they are magnetostatically coupled. In the exchange coupled configuration, the free layer serves to store data and the cell can be read. In its magnetostatically coupled configuration, the cell can be more easily written upon because one of the layers can assist the spin torque transfer by its magnetostatic coupling. If the free layer is formed as a multi-layered lamination of N periodically repeating combinations of a ferromagnetic layer and a coupling valve layer, the critical current can be reduced by a factor of N.

摘要翻译： 我们描述了利用自旋转矩传递作为改变自由层的磁化方向的机制的STT MTJ或GMR MRAM单元元件的形成结构和方法。 通过构成自由层作为包含夹着耦合阀层的两个铁磁层的层压来降低临界电流。 当耦合阀层的居里温度高于电池的温度时，两个铁磁层在其磁化的平行方向上交换耦合。 当耦合阀层高于其居里温度时，它不再交换耦合层，并且它们是静磁耦合的。 在交换耦合配置中，自由层用于存储数据，并且可以读取单元。 在其静磁耦合配置中，电池可以更容易地被写入，因为其中一个层可以通过其静磁耦合来辅助自旋转矩传递。 如果自由层形成为铁磁层和耦合阀层的N个周期性重复组合的多层叠层，则临界电流可以降低N倍

公开(公告)号：US20100315869A1

公开(公告)日：2010-12-16

申请号：US12456324

申请日：2009-06-15

申请人： Tai Min ,  Witold Kula

发明人： Tai Min ,  Witold Kula

IPC分类号： G11C11/14 ,  H01L21/00 ,  H01L29/82

CPC分类号： H01L29/66984 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3268 ,  H01F10/329 ,  H01F41/303 ,  H01F41/307 ,  H01F41/325 ,  H01L43/08 ,  H01L43/12

摘要： The invention discloses a method to store digital information through use of spin torque transfer in a device that has a very low critical current. This is achieved by adding a spin filtering layer whose direction of magnetization is fixed to be parallel to the device's pinned layer.

摘要翻译： 本发明公开了一种通过在具有非常低临界电流的装置中使用自旋扭矩传递来存储数字信息的方法。 这是通过添加其磁化方向被固定为平行于器件的钉扎层的自旋过滤层来实现的。

公开(公告)号：US20100232215A1

公开(公告)日：2010-09-16

申请号：US12381567

申请日：2009-03-13

申请人： Tai Min

发明人： Tai Min

IPC分类号： G11C11/00 ,  H01L29/82 ,  G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1675

摘要： The free layer in a magneto-resistive memory element is stabilized through being pinned by an antiferromagnetic layer. A control valve layer provides exchange coupling between this antiferromagnetic layer and the free layer. When writing data into the free layer, the control valve layer is heated above its curie point thereby temporarily uncoupling the free layer from said antiferromagnetic layer. Once the control valve cools, the free layer magnetization is once again pinned by the antiferromagnetic layer.

摘要翻译： 磁阻存储元件中的自由层由反铁磁层固定而稳定。 控制阀层在该反铁磁层和自由层之间提供交换耦合。 当将数据写入自由层时，将控制阀层加热到其居里点以上，从而使自由层与所述反铁磁层暂时脱离。 一旦控制阀冷却，自由层磁化又被反铁磁层固定住。

公开(公告)号：US20060157765A1

公开(公告)日：2006-07-20

申请号：US11386317

申请日：2006-03-22

申请人： Tai Min ,  PoKang Wang

发明人： Tai Min ,  PoKang Wang

IPC分类号： H01L29/94

CPC分类号： G11C11/16

摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform across the array.

摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。 优选的实施方案将细胞形成为肾或花生的形状。 这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的开关场可以以跨阵列有效和均匀的方式切换电池的磁化。