Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit
    81.
    发明申请
    Utilizing Sidewall Spacer Features to Form Magnetic Tunnel Junctions in an Integrated Circuit 审中-公开
    利用侧壁间隔件在集成电路中形成磁隧道结

    公开(公告)号:US20080211055A1

    公开(公告)日:2008-09-04

    申请号:US12120915

    申请日:2008-05-15

    IPC分类号: H01L43/00 H01L43/12

    CPC分类号: H01L43/12 H01L27/222

    摘要: Novel methods for reliably and reproducibly forming magnetic tunnel junctions in integrated circuits are described. In accordance with aspects of the invention, sidewall spacer features are utilized during the processing of the film stack. Advantageously, these sidewall spacer features create a tapered masking feature which helps to avoid byproduct redeposition during the etching of the MTJ film stack, thereby improving process yield. Moreover, the sidewall spacer features may be used as encapsulating layers during subsequent processing steps and as vertical contacts to higher levels of metallization.

    摘要翻译: 描述了在集成电路中可靠且可重复地形成磁隧道结的新方法。 根据本发明的方面,在膜叠层的处理期间利用侧壁间隔物特征。 有利地,这些侧壁间隔物特征产生锥形掩蔽特征,其有助于避免在MTJ膜叠层的蚀刻期间的副产物再沉积,从而提高工艺产率。 此外,侧壁间隔物特征可以在随后的处理步骤期间用作包封层,并且可以用作垂直接触以进行更高级别的金属化。