公开(公告)号：US20100053822A1

公开(公告)日：2010-03-04

申请号：US12200034

申请日：2008-08-28

申请人： Haiwen Xi ,  Paul Anderson ,  Zheng Gao ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Paul Anderson ,  Zheng Gao ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1675

摘要： A magnetic tunnel junction cell that has a ferromagnetic pinned layer, a ferromagnetic free layer, and a non-magnetic barrier layer therebetween. The free layer has a larger area than the pinned layer, in some embodiments at least twice the size of the pinned layer, in some embodiments at least three times the size of the pinned layer, and in yet other embodiments at least four times the size of the pinned layer. The pinned layer is offset from the center of the free layer. The free layer has a changeable vortex magnetization, changeable between clockwise and counterclockwise directions.

摘要翻译： 磁性隧道结电池，其具有铁磁性钉扎层，铁磁性自由层和它们之间的非磁性阻挡层。 自由层具有比被钉扎层更大的面积，在一些实施例中为钉扎层的尺寸的至少两倍，在一些实施例中为被钉扎层的尺寸的至少三倍，并且在其它实施例中为至少四倍的尺寸 被钉扎层。 固定层从自由层的中心偏移。 自由层具有可变的涡流磁化，可在顺时针和逆时针方向之间改变。

公开(公告)号：US08508988B2

公开(公告)日：2013-08-13

申请号：US13527845

申请日：2012-06-20

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US08400825B2

公开(公告)日：2013-03-19

申请号：US13491891

申请日：2012-06-08

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US08289756B2

公开(公告)日：2012-10-16

申请号：US12502213

申请日：2009-07-13

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Haiwen Xi ,  Xiaobin Wang ,  Wei Tian ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： An apparatus that includes a magnetic structure including a reference layer; and a free layer; an exchange coupling spacer layer; and a stabilizing layer, wherein the exchange coupling spacer layer is between the magnetic structure and the stabilizing layer and exchange couples the free layer of the magnetic structure to the stabilizing layer.

摘要翻译： 一种包括具有参考层的磁性结构的装置; 和自由层; 交换耦合间隔层; 和稳定层，其中所述交换耦合间隔层位于所述磁性结构和所述稳定层之间并且将所述磁性结构的自由层与所述稳定层交换。

公开(公告)号：US20120250405A1

公开(公告)日：2012-10-04

申请号：US13491891

申请日：2012-06-08

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US08213222B2

公开(公告)日：2012-07-03

申请号：US13210436

申请日：2011-08-16

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US08198660B2

公开(公告)日：2012-06-12

申请号：US12869950

申请日：2010-08-27

申请人： Dimitar V. Dimitrov ,  Zheng Gao ,  Xiaobin Wang

发明人： Dimitar V. Dimitrov ,  Zheng Gao ,  Xiaobin Wang

IPC分类号： H01L21/02

CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

摘要： A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.

摘要翻译： 一种多位自旋扭矩磁性元件，其具有具有钉扎磁化取向的铁磁性钉扎层，非磁性层和具有至少四个方向上可切换的磁化方向的铁磁自由层，所述至少四个方向由 自由层的物理形状。 磁性元件具有至少四个不同的电阻状态。 还提供具有至少八个磁化方向的磁性元件。

公开(公告)号：US20100034008A1

公开(公告)日：2010-02-11

申请号：US12199126

申请日：2008-08-27

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/22

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US20120257447A1

公开(公告)日：2012-10-11

申请号：US13527845

申请日：2012-06-20

申请人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

发明人： Yuankai Zheng ,  Dimitar V. Dimitrov ,  Dexin Wang ,  Wei Tian ,  Xiaobin Wang ,  Xiaohua Lou

IPC分类号： G11C11/16

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

摘要翻译： 公开了一种具有补偿元件的磁性隧道结。 磁性隧道结包括参考元件和补偿元件，该补偿元件具有与参考元件的磁化矩相反的磁化力矩。 自由磁性层在参考元件和补偿元件之间，并且电绝缘和非磁性隧道势垒层将自由磁性层与参考元件分开。 自由磁性层包括Co100-X-YFeXBY，其中X是大于30的值，Y是大于15的值。

公开(公告)号：US07876595B2

公开(公告)日：2011-01-25

申请号：US12233760

申请日：2008-09-19

申请人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

发明人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

IPC分类号： G11C19/00

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.

摘要翻译： 具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反 到第一个方向。 第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。 每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。 铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。