Control panel for a cooking device
    81.
    发明授权
    Control panel for a cooking device 有权
    用于烹饪设备的控制面板

    公开(公告)号:US08604393B2

    公开(公告)日:2013-12-10

    申请号:US13902524

    申请日:2013-05-24

    申请人: Coprecitec, S.L.

    IPC分类号: H05B3/68

    CPC分类号: F24C7/083

    摘要: A control panel for controlling the operation of hotplates situated on a cooking appliance. The control panel has a translucent plate that permits the location of operating elements to be visually displayed on a top surface thereof only when lighting elements associated with the operating elements are energized. The lighting elements are selectively energized and/or de-energized so that only the operating elements of a particular hotplate are visible on the top surface of the translucent plate while a user is in the process of selecting or otherwise altering an operating parameter of the particular hot plate.

    摘要翻译: 一种用于控制位于烹饪器具上的电炉操作的控制面板。 控制面板具有半透明板,只有当与操作元件相关联的照明元件通电时,允许操作元件的位置在其顶表面上可视地显示。 照明元件被选择性地通电和/或断电,使得只有特定加热板的操作元件在半透明板的顶表面上可见,而用户正在选择或以其它方式改变特定加热板的操作参数 热板。

    MULTIPLEXED HEATER ARRAY USING AC DRIVE FOR SEMICONDUCTOR PROCESSING
    82.
    发明申请
    MULTIPLEXED HEATER ARRAY USING AC DRIVE FOR SEMICONDUCTOR PROCESSING 有权
    使用交流驱动的多路加热器阵列进行半导体加工

    公开(公告)号:US20130220989A1

    公开(公告)日:2013-08-29

    申请号:US13406978

    申请日:2012-02-28

    IPC分类号: H05B3/68

    摘要: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, branch transmission lines, common transmission lines and vias. The heating plate is capable of being driven by AC current or direct current phase alternating power, which has an advantage of minimizing DC magnetic field effects above the substrate support assembly and reduce plasma non-uniformity caused by DC magnetic fields.

    摘要翻译: 一种用于半导体等离子体处理设备中的基板支撑组件的加热板,包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域,以及用于独立地控制和供电平面加热器区域的电子装置。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热器区域,分支传输线,公共传输线路和通孔的陶瓷或聚合物片材结合在一起。 加热板能够通过交流电流或直流相交流功率驱动,其具有使基板支撑组件上方的直流磁场效应最小化的优点,并且减小由直流磁场引起的等离子体不均匀性。

    Control panel for a cooking device
    83.
    发明授权

    公开(公告)号:US08455799B2

    公开(公告)日:2013-06-04

    申请号:US12705457

    申请日:2010-02-12

    IPC分类号: H05B3/68

    CPC分类号: F24C7/083

    摘要: A control panel for controlling the operation of hotplates situated on a cooking appliance. The control panel has a translucent plate that permits the location of operating elements to be visually displayed on a top surface thereof only when lighting elements associated with the operating elements are energized. The lighting elements are selectively energized and/or de-energized so that only the operating elements of a particular hotplate are visible on the top surface of the translucent plate while a user is in the process of selecting or otherwise altering an operating parameter of the particular hot plate.

    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING
    84.
    发明申请
    THERMAL PLATE WITH PLANAR THERMAL ZONES FOR SEMICONDUCTOR PROCESSING 有权
    具有用于半导体加工的平面热区的热板

    公开(公告)号:US20130072035A1

    公开(公告)日:2013-03-21

    申请号:US13238396

    申请日:2011-09-21

    IPC分类号: H01L21/30 H01C17/02 H05B3/68

    摘要: A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.

    摘要翻译: 一种用于半导体等离子体处理装置中的衬底支撑组件的热板,包括以可伸缩复用布局布置的多个可独立控制的平面热区,以及用于独立地控制和供电平面加热器区的电子装置。 每个平面热区使用至少一个珀耳帖装置作为热电元件。 其中结合热板的基板支撑组件包括静电夹持电极层和温度控制的基板。 用于制造热板的方法包括将具有平面热区域,正,负和公共线路和通孔的陶瓷或聚合物片材结合在一起。

    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING
    85.
    发明申请
    HEATING PLATE WITH DIODE PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING 有权
    具有二极管平面加热器的加热板用于半导体加工

    公开(公告)号:US20130068750A1

    公开(公告)日:2013-03-21

    申请号:US13237444

    申请日:2011-09-20

    IPC分类号: H05B3/68

    摘要: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

    摘要翻译: 一种用于半导体等离子体处理设备中的基板支撑组件的加热板,包括以可伸缩复用布局布置的多个可独立控制的平面加热器区域,以及用于独立地控制和供电平面加热器区域的电子装置。 每个平面加热器区域使用至少一个二极管作为加热器元件。 其中结合加热板的基板支撑组件包括静电夹持电极和温度控制的基板。 制造加热板的方法包括将具有平面加热区,电源线,电源返回线和通孔的陶瓷或聚合物片粘合在一起。

    Stage for substrate temperature control apparatus
    86.
    发明授权
    Stage for substrate temperature control apparatus 有权
    基板温度控制装置的阶段

    公开(公告)号:US08399811B2

    公开(公告)日:2013-03-19

    申请号:US12596755

    申请日:2008-03-28

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67103

    摘要: A stage for a substrate temperature control apparatus having high reliability at low cost by preventing thermal deformation of a plate while employing a material other than ceramics as a material of the plate. The stage is used for mounting a substrate in the substrate temperature control apparatus for controlling a temperature of the substrate, and the stage includes: a plate having a first surface facing the substrate and a second surface opposite to the first surface; and a planar heater bonded to the second surface of the plate, wherein surface treatment is performed in a first thickness on the first surface of the plate, and the surface treatment is performed in a second thickness thinner than the first thickness or no surface treatment is performed on a predetermined area of the second surface of the plate.

    摘要翻译: 通过在采用陶瓷以外的材料作为板的材料的同时防止板的热变形,以低成本具有高可靠性的基板温度控制装置的阶段。 该台用于将基板安装在用于控制基板的温度的基板温度控制装置中,并且该台包括:具有面向基板的第一表面和与第一表面相对的第二表面的板; 以及结合到所述板的第二表面的平面加热器,其中在所述板的第一表面上以第一厚度进行表面处理,并且所述表面处理以比所述第一厚度更薄的第二厚度进行或者不进行表面处理 在板的第二表面的预定区域上执行。

    Electric patio bistro
    87.
    发明授权
    Electric patio bistro 有权
    电气露台小酒馆

    公开(公告)号:US08399810B2

    公开(公告)日:2013-03-19

    申请号:US12849850

    申请日:2010-08-04

    申请人: Mallik Ahmed

    发明人: Mallik Ahmed

    IPC分类号: H05B1/00 H05B3/68

    CPC分类号: A47J37/0709

    摘要: A grilling apparatus comprising: a base housing; a cooking grate positionable on or in an upper portion of the base housing; a radiant heat cavity within the base housing below the cooking grate; at least one electric heating element within the radiant heat cavity; and a reflective surface within the radiant heat cavity which diverges outwardly in an upward direction at an angle of from 20° to 60° from horizontal.

    摘要翻译: 一种烧烤装置,包括:基座壳体; 烹饪炉排可定位在基座壳体的上部或上部; 在烹饪炉排下方的基座壳体内的辐射热腔; 在辐射热腔内的至少一个电加热元件; 以及辐射热腔内的反射表面,其向上沿与水平方向成20°至60°的角度向外发散。

    Substrate processing apparatus and substrate stage used therein
    88.
    发明授权
    Substrate processing apparatus and substrate stage used therein 有权
    基板处理装置及基板台

    公开(公告)号:US08283606B2

    公开(公告)日:2012-10-09

    申请号:US12186103

    申请日:2008-08-05

    申请人: Daisuke Hayashi

    发明人: Daisuke Hayashi

    CPC分类号: H01L21/68785 H01L21/67109

    摘要: A substrate stage includes a stage upon which a wafer is placed, a heater element installed within the stage, an upright support that ranges upright from a bottom of a processing chamber and includes a tubular member that includes a small tube portion, a large tube portion and a middle portion attached to and joins the small tube portion and the large tube portion to one another, an outer heat shield plate disposed so as to surround the outer side of the small tube portion and an inner heat shield plate. The outer heat shield plate and the inner heat shield plate are disposed so that an inner edge of the outer heat shield plate and an outer edge of the inner heat shield plate overlap along the entire circumference.

    摘要翻译: 衬底台包括放置晶片的台,安装在平台内的加热器元件,从处理室的底部直立的直立支撑件,并且包括管状构件,该管状构件包括小管部分,大管部分 以及将小管部和大管部彼此附接并接合的中间部分,设置成围绕小管部分的外侧设置的外部热屏蔽板和内部热屏蔽板。 外部隔热板和内部隔热板被设置为使得外部隔热板的内边缘和内部隔热板的外边缘沿着整个圆周重叠。

    LASER PROCESSING WORK TABLE
    89.
    发明申请
    LASER PROCESSING WORK TABLE 审中-公开
    激光加工工作台

    公开(公告)号:US20120241437A1

    公开(公告)日:2012-09-27

    申请号:US13370577

    申请日:2012-02-10

    申请人: Il-Young JEONG

    发明人: Il-Young JEONG

    IPC分类号: H05B3/68

    摘要: A laser processing work table for processing a substrate by using a laser beam includes a base plate; a plurality of supporting blocks arranged on the base plate, each of which includes one or more penetration holes and on which the substrate is arranged; and an absorption member which is connected to the base plate and transmits an absorption force via the one or more penetration holes, such that the substrate and the plurality of supporting blocks are attached to each other.

    摘要翻译: 用于通过使用激光束来处理基板的激光加工工作台包括基板; 布置在所述基板上的多个支撑块,每个支撑块包括一个或多个穿透孔,并且所述基板布置在所述基板上; 以及吸收构件,其连接到所述基板并且经由所述一个或多个穿透孔传递吸收力,使得所述基板和所述多个支撑块彼此附接。

    Multifunctional heater/chiller pedestal for wide range wafer temperature control
    90.
    发明授权
    Multifunctional heater/chiller pedestal for wide range wafer temperature control 有权
    多功能加热器/冷水机座,适用于宽幅晶圆温度控制

    公开(公告)号:US08274017B2

    公开(公告)日:2012-09-25

    申请号:US12641819

    申请日:2009-12-18

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67109 H01L21/68792

    摘要: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

    摘要翻译: 本发明的实施例一般涉及半导体处理室,更具体地说,涉及用于半导体处理室的加热支撑基座。 在一个实施例中,提供了一种用于半导体处理室的基座。 基座包括基板支撑件,该基板支撑件包括导电材料并且具有用于接收基板的支撑表面,封装在基板支撑件内的电阻加热器,在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口, 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件,所述冷却通道组件设置在所述轴体内,用于经由内部冷却路径从所述基座移除热量,其中所述基板支撑件具有位于 加热元件和环形冷却通道。