摘要:
A control panel for controlling the operation of hotplates situated on a cooking appliance. The control panel has a translucent plate that permits the location of operating elements to be visually displayed on a top surface thereof only when lighting elements associated with the operating elements are energized. The lighting elements are selectively energized and/or de-energized so that only the operating elements of a particular hotplate are visible on the top surface of the translucent plate while a user is in the process of selecting or otherwise altering an operating parameter of the particular hot plate.
摘要:
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, branch transmission lines, common transmission lines and vias. The heating plate is capable of being driven by AC current or direct current phase alternating power, which has an advantage of minimizing DC magnetic field effects above the substrate support assembly and reduce plasma non-uniformity caused by DC magnetic fields.
摘要:
A control panel for controlling the operation of hotplates situated on a cooking appliance. The control panel has a translucent plate that permits the location of operating elements to be visually displayed on a top surface thereof only when lighting elements associated with the operating elements are energized. The lighting elements are selectively energized and/or de-energized so that only the operating elements of a particular hotplate are visible on the top surface of the translucent plate while a user is in the process of selecting or otherwise altering an operating parameter of the particular hot plate.
摘要:
A thermal plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar thermal zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar thermal zone uses at least one Peltier device as a thermoelectric element. A substrate support assembly in which the thermal plate is incorporated includes an electrostatic clamping electrode layer and a temperature controlled base plate. Methods for manufacturing the thermal plate include bonding together ceramic or polymer sheets having planar thermal zones, positive, negative and common lines and vias.
摘要:
A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.
摘要:
A stage for a substrate temperature control apparatus having high reliability at low cost by preventing thermal deformation of a plate while employing a material other than ceramics as a material of the plate. The stage is used for mounting a substrate in the substrate temperature control apparatus for controlling a temperature of the substrate, and the stage includes: a plate having a first surface facing the substrate and a second surface opposite to the first surface; and a planar heater bonded to the second surface of the plate, wherein surface treatment is performed in a first thickness on the first surface of the plate, and the surface treatment is performed in a second thickness thinner than the first thickness or no surface treatment is performed on a predetermined area of the second surface of the plate.
摘要:
A grilling apparatus comprising: a base housing; a cooking grate positionable on or in an upper portion of the base housing; a radiant heat cavity within the base housing below the cooking grate; at least one electric heating element within the radiant heat cavity; and a reflective surface within the radiant heat cavity which diverges outwardly in an upward direction at an angle of from 20° to 60° from horizontal.
摘要:
A substrate stage includes a stage upon which a wafer is placed, a heater element installed within the stage, an upright support that ranges upright from a bottom of a processing chamber and includes a tubular member that includes a small tube portion, a large tube portion and a middle portion attached to and joins the small tube portion and the large tube portion to one another, an outer heat shield plate disposed so as to surround the outer side of the small tube portion and an inner heat shield plate. The outer heat shield plate and the inner heat shield plate are disposed so that an inner edge of the outer heat shield plate and an outer edge of the inner heat shield plate overlap along the entire circumference.
摘要:
A laser processing work table for processing a substrate by using a laser beam includes a base plate; a plurality of supporting blocks arranged on the base plate, each of which includes one or more penetration holes and on which the substrate is arranged; and an absorption member which is connected to the base plate and transmits an absorption force via the one or more penetration holes, such that the substrate and the plurality of supporting blocks are attached to each other.
摘要:
Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.