Showerhead for Processing Chamber
    1.
    发明申请
    Showerhead for Processing Chamber 有权
    加工室喷头

    公开(公告)号:US20120156877A1

    公开(公告)日:2012-06-21

    申请号:US12973845

    申请日:2010-12-20

    摘要: A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension.

    摘要翻译: 提供了具有背板和毂的用于处理室的顶部组件。 背板具有第一部分和第二部分。 第一部分通过背板的中心区域连接到第二部分,其中在中心区域外部的第一和第二部分的相对表面之间限定间隙。 第一部分包括嵌入式加热元件。 轮毂在中心区域上固定在背板的第二部分的顶表面上。 毂具有顶表面,其具有限定在毂的中心区域内的多个通道开口,底面具有中心延伸部,多个通道限定在其中。 底表面包括与中心延伸部间隔开的环形延伸部。

    MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL
    2.
    发明申请
    MULTIFUNCTIONAL HEATER/CHILLER PEDESTAL FOR WIDE RANGE WAFER TEMPERATURE CONTROL 有权
    多功能加热器/冷却器用于宽范围的温度控制

    公开(公告)号:US20110147363A1

    公开(公告)日:2011-06-23

    申请号:US12641819

    申请日:2009-12-18

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67109 H01L21/68792

    摘要: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

    摘要翻译: 本发明的实施例一般涉及半导体处理室,更具体地说,涉及用于半导体处理室的加热支撑基座。 在一个实施例中,提供了一种用于半导体处理室的基座。 基座包括基板支撑件,该基板支撑件包括导电材料并且具有用于接收基板的支撑表面,封装在基板支撑件内的电阻加热器,在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口, 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件,所述冷却通道组件设置在所述轴体内,用于经由内部冷却路径从所述基座移除热量,其中所述基板支撑件具有位于 加热元件和环形冷却通道。

    PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION
    3.
    发明申请
    PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION 审中-公开
    PEDESTAL加热器用于低温PECVD应用

    公开(公告)号:US20090314208A1

    公开(公告)日:2009-12-24

    申请号:US12490168

    申请日:2009-06-23

    IPC分类号: C23C16/54

    摘要: A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin.

    摘要翻译: 提供了一种用于向加热的支撑台提供电力的方法和装置。 在一个实施方案中,描述了处理试剂盒。 该处理套件包括一个空心轴,该导电材料由一端连接到一基板支撑件,一相对端连接一底座组件,该基座组件适于耦接至设置在半导体加工工具上的动力箱。 在一个实施例中,基座组件包括至少一个暴露的电连接器,其设置在由电介质材料(例如塑料树脂)制成的插入件中。

    Showerhead for processing chamber
    4.
    发明授权
    Showerhead for processing chamber 有权
    处理室用喷头

    公开(公告)号:US08733280B2

    公开(公告)日:2014-05-27

    申请号:US12973845

    申请日:2010-12-20

    摘要: A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension.

    摘要翻译: 提供了具有背板和毂的用于处理室的顶部组件。 背板具有第一部分和第二部分。 第一部分通过背板的中心区域连接到第二部分,其中在中心区域外部的第一和第二部分的相对表面之间限定间隙。 第一部分包括嵌入式加热元件。 轮毂在中心区域上固定在背板的第二部分的顶表面上。 毂具有顶表面,其具有限定在毂的中心区域内的多个通道开口,底面具有中心延伸部,多个通道限定在其中。 底表面包括与中心延伸部间隔开的环形延伸部。

    Multifunctional heater/chiller pedestal for wide range wafer temperature control
    5.
    发明授权
    Multifunctional heater/chiller pedestal for wide range wafer temperature control 有权
    多功能加热器/冷水机座,适用于宽幅晶圆温度控制

    公开(公告)号:US08274017B2

    公开(公告)日:2012-09-25

    申请号:US12641819

    申请日:2009-12-18

    IPC分类号: H05B3/68

    CPC分类号: H01L21/67109 H01L21/68792

    摘要: Embodiments of the invention generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one embodiment, a pedestal for a semiconductor processing chamber is provided. The pedestal comprises a substrate support comprising a conductive material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to the substrate support at a first end and a mating interface at an opposing end, the hollow shaft comprising a shaft body having a hollow core, and a cooling channel assembly encircling the hollow core and disposed within the shaft body for removing heat from the pedestal via an internal cooling path, wherein the substrate support has a heat control gap positioned between the heating element and the ring-shaped cooling channel.

    摘要翻译: 本发明的实施例一般涉及半导体处理室,更具体地说,涉及用于半导体处理室的加热支撑基座。 在一个实施例中,提供了一种用于半导体处理室的基座。 基座包括基板支撑件,该基板支撑件包括导电材料并且具有用于接收基板的支撑表面,封装在基板支撑件内的电阻加热器,在第一端处耦合到基板支撑件的中空轴和在相对端处的配合接口, 所述空心轴包括具有中空芯的轴体和围绕所述中空芯的冷却通道组件,所述冷却通道组件设置在所述轴体内,用于经由内部冷却路径从所述基座移除热量,其中所述基板支撑件具有位于 加热元件和环形冷却通道。