摘要:
Methods and systems for interconnecting back contact solar cells. The solar cells preferably have reduced area busbars, or are entirely busbarless, and current is extracted from a variety of points on the interior of the cell surface. The interconnects preferably relieve stresses due to solder reflow and other thermal effects. The interconnects may be stamped and include external or internal structures which are bonded to the solder pads on the solar cell. These structures are designed to minimize thermal stresses between the interconnect and the solar cell. The interconnect may alternatively comprise porous metals such as wire mesh, wire cloth, or expanded metal, or corrugated or fingered strips. The interconnects are preferably electrically isolated from the solar cell by an insulator which is deposited on the cell, placed on the cell as a discrete layer, or laminated directly to desired areas of the interconnect.
摘要:
Method for controlling glass formation on a semiconductor substrate. By using a doped diffusion barrier material, such as a transition metal oxide paste, the subsequent diffusion of glass forming elements into the substrate may be stabilized and controlled.
摘要:
Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared to the average dopant concentration on front or rear surfaces, and provided increased efficiency. Certain methods provide for selective doping to holes for forming conductive vias by use of printed dopant pastes. Other methods provide for use of spin-on glass substrates including dopant.
摘要:
Back contact solar cells including rear surface structures and methods for making same. The rear surface is doped to form an n+ emitter and then coated with a dielectric layer. Small regions are scribed in the rear surface and p-type contacts are then formed in the regions. Large conductive grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.
摘要:
Methods for fabrication of emitter wrap through (EWT) back-contact solar cells and cells made by such methods. Certain methods provide for higher concentration of dopant in conductive vias compared to the average dopant concentration on front or rear surfaces, and provided increased efficiency. Certain methods provide for selective doping to holes for forming conductive vias by use of printed dopant pastes. Other methods provide for use of spin-on glass substrates including dopant.
摘要:
Methods and systems for interconnecting back contact solar cells. The solar cells preferably have reduced area busbars, or are entirely busbarless, and current is extracted from a variety of points on the interior of the cell surface. The interconnects preferably relieve stresses due to solder reflow and other thermal effects. The interconnects may be stamped and include external or internal structures which are bonded to the solder pads on the solar cell. These structures are designed to minimize thermal stresses between the interconnect and the solar cell. The interconnect may alternatively comprise porous metals such as wire mesh, wire cloth, or expanded metal, or corrugated or fingered strips. The interconnects are preferably electrically isolated from the solar cell by an insulator which is deposited on the cell, placed on the cell as a discrete layer, or laminated directly to desired areas of the interconnect.
摘要:
A buried-contact solar cell, in-process buried-contact solar cell components and methods for making buried contact solar cells wherein a self-doping contact material is placed in a plurality of buried-contact surface grooves. By combining groove doping and metallization steps, the resulting solar cell is simpler and more economical to manufacture.
摘要:
A buried-contact solar cell, in-process buried-contact solar cell components and methods for making buried contact solar cells wherein a self-doping contact material is placed in a plurality of buried-contact surface grooves. By combining groove doping and metallization steps, the resulting solar cell is simpler and more economical to manufacture.
摘要:
Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.
摘要:
Methods of manufacturing back-contacted silicon solar cells fabricated using a gradient-driven solute transport process, such as thermomigration or electromigration, to create n-type conductive vias connecting the n-type emitter layer on the front side to n-type ohmic contacts located on the back side.