CONTACTLESS DEVICE FOR GENERATING COMPRESSION OR TENSION STEPS

    公开(公告)号:US20240361198A1

    公开(公告)日:2024-10-31

    申请号:US18646254

    申请日:2024-04-25

    IPC分类号: G01L25/00

    CPC分类号: G01L25/00

    摘要: A device including a sensor capable of carrying out dynamic force or mass measurements, for example a force sensor, including a magnetic device to generate a magnetic field according to at least one axis (XX′), a device to adjust and then hold a relative position, according to the axis (XX′), between a force sensor to be tested and the magnetic device, and a device to measure a signal representative of a tensile or compressive force applied to a contactless force sensor, directly using the magnetic device.

    Radar detection device
    2.
    发明授权

    公开(公告)号:US12123934B2

    公开(公告)日:2024-10-22

    申请号:US17456452

    申请日:2021-11-24

    IPC分类号: G01S13/02 G01S13/34

    CPC分类号: G01S13/0209 G01S13/343

    摘要: A radar measuring device including at least:



    a circuit for generating a radar signal RFIN(t);
    an emitting antenna;
    an injection-locked oscillator;
    a first power divider comprising an input coupled to an output of the circuit for generating the radar signal RFIN(t), a first output coupled to the emitting antenna, and a second output to an input of the injection-locked oscillator which is configured to be locked over a portion of an effective band B of the radar signal RFIN(t);
    a receiving antenna intended to receive a reflected radar signal RFIN_REFL(t);
    a mixer comprising a first input coupled to the receiving antenna, a second input coupled to an output of the injection-locked oscillator, and an output coupled to an input to a signal processing circuit.

    Method for sizing a gray scale lithography mask

    公开(公告)号:US12111569B2

    公开(公告)日:2024-10-08

    申请号:US18601853

    申请日:2024-03-11

    发明人: Ujwol Palanchoke

    IPC分类号: G03F1/70

    CPC分类号: G03F1/70

    摘要: A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.

    METHOD FOR MANAGING A CACHE MEMORY
    6.
    发明公开

    公开(公告)号:US20240320151A1

    公开(公告)日:2024-09-26

    申请号:US18581454

    申请日:2024-02-20

    发明人: Olivier SAVRY

    IPC分类号: G06F12/0811 G06F21/60

    CPC分类号: G06F12/0811 G06F21/602

    摘要: This method comprises:



    selecting, depending on an address of a word to be read or written, a first cell in an indirection table and using, as first value generated for a line index, the value contained in this first cell, and
    in response to triggering of a cache miss:

    storing the word retrieved from a memory of higher rank in a new line identified by a second line-index value, this second value being contained in a second cell of the indirection table, and
    permutating, in the indirection table, only values contained in the first and second cells, so that after this permutation the first cell contains the second value and the second cell contains the first value.

    PROCESS FOR PRODUCING LIGHT-EMITTING DIODES
    7.
    发明公开

    公开(公告)号:US20240313150A1

    公开(公告)日:2024-09-19

    申请号:US18575478

    申请日:2022-06-27

    IPC分类号: H01L33/00

    CPC分类号: H01L33/0075

    摘要: A process for producing light-emitting diodes includes producing a first segment made of inorganic semiconductor doped with a first conductivity type; producing, on a first region of the first segment and through a mask, a first emitting segment made of inorganic semiconductor; moving the mask; producing, on a second region of the first segment, a second emitting segment made of inorganic semiconductor; and producing, at least on the first and second emitting segments, a segment made of inorganic semiconductor doped with a second conductivity type. The chemical compositions of the first and second emitting segments are different from each other and such that their bandgaps are narrower than or equal to those of the segments made of doped inorganic semiconductor.

    METHOD FOR SIZING A GRAY SCALE LITHOGRAPHY MASK

    公开(公告)号:US20240302737A1

    公开(公告)日:2024-09-12

    申请号:US18601853

    申请日:2024-03-11

    发明人: Ujwol PALANCHOKE

    IPC分类号: G03F9/00 G03F7/00

    CPC分类号: G03F1/70

    摘要: A method for sizing a greyscale lithography mask is disclosed. The mask includes first opaque zones, being opaque to light-exposing radiation, located in first pixels forming a first mask grating. A first target density of a first surface density of first opaque zones is first established. This first target density makes it possible to expose a resin to light over a first given target thickness when it is exposed to the radiation through the first grating. The dimensions of the first pixels and the dimensions of the first opaque zones are then established, such that the value of an error over the first target thickness is less than a first given threshold. The dimensions obtained for the sizing of the first mask grating are used.