公开(公告)号：US20100304501A1

公开(公告)日：2010-12-02

申请号：US12740348

申请日：2007-11-09

Applicant: Dae Sik Lee ,  Rae Man Park ,  Sung Lyul Maeng ,  Moon Youn Jung ,  Seon Hee Park ,  Hyun Chul Yoon

Inventor： Dae Sik Lee ,  Rae Man Park ,  Sung Lyul Maeng ,  Moon Youn Jung ,  Seon Hee Park ,  Hyun Chul Yoon

IPC: G01N33/543 ,  G01N30/96

CPC classification number: G01N33/54366 ,  B01L3/502707 ,  B01L3/50273 ,  B01L2200/0673 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0816 ,  B01L2300/089 ,  B01L2300/161 ,  B01L2400/0436 ,  B01L2400/0496 ,  G01N33/5438

Abstract: Disclosed is a bio lab-on-a-chip. The bio lab-on-a-chip is provided on a piezoelectric thin film on a substrate, and includes a sensing unit to sense a bio signal and a fluidic control unit which controls a transfer of a microfluid adjacent to the sensing unit. Provided is also a method of fabricating the bio lab-on-a-chip. The method includes the steps of forming a piezoelectric thin film, forming a sensing unit to sense a bio signal of a microfluid on the piezoelectric thin film, and forming a fluidic control unit located adjacent to the sensing unit.

Abstract translation: 公开了一种生物实验室芯片。 片上生物实验室设置在基板上的压电薄膜上，并且包括用于感测生物信号的感测单元和控制与感测单元相邻的微流体传输的流体控制单元。 还提供了一种制造生物芯片实验室的方法。 该方法包括形成压电薄膜的步骤，形成感测单元以感测压电薄膜上的微流体的生物信号，以及形成位于感测单元附近的流体控制单元。

公开(公告)号：US20090207472A1

公开(公告)日：2009-08-20

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/786

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。