WAFER HOLDER AND SEMICONDUCTOR MANUFACTURING APPARATUS
    1.
    发明申请
    WAFER HOLDER AND SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
    过滤器和半导体制造设备

    公开(公告)号:US20170067162A1

    公开(公告)日:2017-03-09

    申请号:US15017880

    申请日:2016-02-08

    摘要: A wafer holder according to an embodiment includes a wafer holder. A wafer support-portion is provided at an end portion of a mount region for a wafer. A first portion is located nearer a central portion of the mount region than the wafer support-portion. A first depth of the first portion with reference to an upper surface of the wafer holder outside the mount region is larger than a second depth of the wafer support-portion and a third depth of a third portion located nearer the central portion of the mount region than the first portion. A second portion is located nearer the central portion of the mount region than the wafer support-portion. A fourth depth of the second portion with reference to the upper surface of the wafer holder outside the mount region is larger than the second and third depths and smaller than the first depth.

    摘要翻译: 根据实施例的晶片保持器包括晶片保持器。 在晶片的安装区域的端部设置有晶片支撑部。 第一部分位于比晶片支撑部分更靠近安装区域的中心部分。 相对于安装区域外的晶片保持器的上表面,第一部分的第一深度大于晶片支撑部分的第二深度,并且位于更靠近安装区域的中心部分的第三部分的第三深度 比第一部分。 第二部分位于比晶片支撑部分更靠近安装区域的中心部分。 相对于安装区域外的晶片保持器的上表面的第二部分的第四深度大于第二和第三深度并且小于第一深度。

    X-RAY CT APPARATUS
    3.
    发明申请
    X-RAY CT APPARATUS 有权
    X射线CT装置

    公开(公告)号:US20140079178A1

    公开(公告)日:2014-03-20

    申请号:US14110860

    申请日:2013-01-21

    发明人: Go Mukumoto

    IPC分类号: A61B6/00 A61B6/03

    摘要: An X-ray CT apparatus, which is capable of quickly acquiring information for determining whether further CT imaging is required, is provided. The X-ray CT apparatus according to the embodiment comprises a reconstruction processor, a setting unit, and a controller. The reconstruction processor carries out first reconstruction processing to be carried out at a first image thickness based on detection data to be sequentially acquired by X-ray scanning of the desired site of a subject, and second reconstruction processing to be carried out at a second image thickness based on all detection data acquired by the X-ray scanning. The setting unit sets the first image thickness based on the second image thickness set in advance. The controller allows the reconstruction processor to initiate the first reconstruction processing in parallel with the X-ray scanning at the set first image thickness and initiate the second reconstruction processing at the second image thickness once the first reconstruction processing is completed.

    摘要翻译: 提供了能够快速获取用于确定是否需要进一步CT成像的信息的X射线CT装置。 根据实施例的X射线CT装置包括重构处理器,设置单元和控制器。 重构处理器基于要通过对被摄体的期望位置的X射线扫描顺序获取的检测数据,以第一图像厚度进行第一重建处理,以及在第二图像处执行的第二重建处理 基于通过X射线扫描获取的所有检测数据的厚度。 设定单元基于预先设定的第二图像厚度设定第一图像厚度。 控制器允许重建处理器在设置的第一图像厚度处与X射线扫描并行地开始第一重建处理,并且一旦完成第一重建处理就开始第二重建处理。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20170077220A1

    公开(公告)日:2017-03-16

    申请号:US15062207

    申请日:2016-03-07

    摘要: A semiconductor device includes a SiC layer that has a first surface and a second surface, a first electrode in contact with the first surface, a first SiC region of a first conductivity type in the SiC layer, a second SiC region of a second conductivity type in the SiC layer and surrounding a portion of the first SiC region, a third SiC region of the second conductivity type in the SiC layer and surrounding the second SiC region, the third SiC region having an impurity concentration of the second conductivity type lower than that of the second SiC region, and a fourth SiC region of the second conductivity type in the SiC layer between the second SiC region and the third Sic region, the fourth SiC region having an impurity concentration of the second conductivity type higher than that of the second SiC region.

    摘要翻译: 半导体器件包括具有第一表面和第二表面的SiC层,与第一表面接触的第一电极,SiC层中的第一导电类型的第一SiC区域,第二导电类型的第二SiC区域 在SiC层中并且包围第一SiC区域的一部分,SiC层中的第二导电类型的第三SiC区域并且围绕第二SiC区域,具有低于第二导电类型的第二导电类型的第三导电类型的第三SiC区域 以及在第二SiC区域和第三Sic区域之间的SiC层中的第二导电类型的第四SiC区域,具有比第二SiC区域的第二导电类型的第二导电类型的杂质浓度高的第四SiC区域 SiC区域。

    SPOKEN SENTENCE PROCESSING APPARATUS, METHOD, AND NON-TRANSITORY COMPUTER READABLE MEDIUM

    公开(公告)号:US20230134696A1

    公开(公告)日:2023-05-04

    申请号:US17898067

    申请日:2022-08-29

    IPC分类号: G10L15/08 G10L15/22

    摘要: According to one embodiment, a spoken sentence processing apparatus includes a processing circuit. The processing circuit receives a spoken sentence from a user. The processing circuit estimates an intention expressed by the user based on the spoken sentence. The processing circuit estimates a search condition specified by the user based on the spoken sentence. The processing circuit determines whether the spoken sentence is an invalid speech respectively in a first estimation result related to the estimated intention and a second estimation result related to the estimated search condition.

    Signal transmission device and signal transmission method

    公开(公告)号:US11641291B2

    公开(公告)日:2023-05-02

    申请号:US17472960

    申请日:2021-09-13

    发明人: Takashi Doi

    摘要: According to one embodiment, a signal transmission device AC-coupled with a reception device through a digital transmission line, includes transmitting circuitry configured to transmit a differential signal to the digital transmission line, the differential signal including a first signal and a second signal that are based on an encoded bit serial input signal, wherein absolute values of amplitudes of the first and second signals are 857.14 (mV) or larger.

    Failure detection circuit and semiconductor device

    公开(公告)号:US11639961B2

    公开(公告)日:2023-05-02

    申请号:US17016751

    申请日:2020-09-10

    发明人: Kenji Suina

    IPC分类号: G01R31/317

    摘要: A first circuit outputs a third signal having a first level during a period over which first and second signals have the same level, and having a second level during a period over which the first and second signals have different levels. A second circuit outputs a fifth signal having the first level during a period over which a fourth signal having the same level as the third signal has the same level as the first signal, and having the second level during a period over which the first and fourth signals have different levels. A third circuit outputs a sixth signal having a third level during a period over which the second and fifth signals have the same level, and having a fourth level during a period over which the second and fifth signals have different levels.

    Sensor and electric device
    9.
    发明授权

    公开(公告)号:US11639946B2

    公开(公告)日:2023-05-02

    申请号:US17668230

    申请日:2022-02-09

    发明人: Hiroaki Yamazaki

    IPC分类号: G01R1/20 G01R19/00

    摘要: According to one embodiment, a sensor includes a base including a first face including a first face region, and a first structure body fixed to the first face region. The first structure body includes a first support portion fixed to the first face region, a second support portion fixed to the first face region, a first movable portion, and a first fixed electrode fixed to the first face region. The first movable portion is supported by the first and second support portions and apart from the base in a first direction crossing the first face region. The first movable portion includes a first movable electrode facing the first fixed electrode, and a first conductive member. A first current flows the first conductive member along a second direction crossing the first direction. A first gap is provided between the first fixed electrode and the first movable portion.

    Dialogue apparatus, method and non-transitory computer readable medium

    公开(公告)号:US11636271B2

    公开(公告)日:2023-04-25

    申请号:US17186667

    申请日:2021-02-26

    摘要: According to one embodiment, a dialogue apparatus includes a processing circuit. The processing circuit designates one database from among a plurality of databases. The processing circuit extracts a keyword from text information. The processing circuit searches the designated database and another database which is included in the plurality of databases and which is other than the designated database, by using the keyword. The processing circuit generates a response in accordance with a first number of hit items, which is a number of data items matching the keyword in the designated database, and a second number of hit items, which is a number of data items matching the keyword in said another database.