Abstract:
A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.
Abstract:
A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.
Abstract:
An apparatus for bonding substrates and a method of bonding substrates are provided. In accordance with one exemplary embodiment of the present invention, a first plate to mount a first substrate is provided. A chamber body movably connected to the first plate is provided. A second plate that is placed opposite to the first plate and a second substrate is mounted on the second plate is provided. A chamber lead having the second plate mounted inside is provided which is movably connected to the chamber body to move rotationally or linearly to open or close the chamber space with the chamber body. A pair of first alignment cameras is placed outside of the chamber space to scan the first substrate or the second substrate. A stage control unit is provided to move the first plate or the second plate to align the first substrate and the second substrate.
Abstract:
The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber. The wafer bonding method includes the steps of: providing a first process chamber with a first wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the first wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the first wafer; withdrawing out the first wafer from the first process chamber and providing a second process chamber with the first wafer; providing a third process chamber with a second wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the second wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the second wafer; withdrawing out the second wafer from the third process chamber and providing the second process chamber with the second wafer whose bonding surface faces to the bonding surface of the first wafer and bonding the bonding surfaces of the first and second wafers to each other.