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    Substrate bonding system and mobile chamber used thereto
    1.
    发明授权
    Substrate bonding system and mobile chamber used thereto 有权
    基板接合系统和移动室

    公开(公告)号：US08999099B2

    公开(公告)日：2015-04-07

    申请号：US13577458

    申请日：2010-11-26

    Applicant: Yong-Won Cha ,  Sang Wook Yoo ,  Gun-Woo Park ,  Seung-Hee Jung

    Inventor： Yong-Won Cha ,  Sang Wook Yoo ,  Gun-Woo Park ,  Seung-Hee Jung

    IPC: B29C65/00 ,  B32B37/00 ,  H01L21/677 ,  H01L21/67

    CPC classification number: H01L21/6776 ,  H01L21/67092 ,  H01L21/6719

    Abstract: A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.

    Abstract translation: 一种基板连接系统，包括用于接收对准的一对基板的便携式室; 提供了一种输送机输送装置，其连续地移动便携式室，并且提供连接到便携式室的真空端口以抽真空便携式室的内部的真空发生器。 以及用于进行加热处理的加热装置，其中对准的基板在便携式室中彼此附接，其中输送机输送装置布置成穿过加热装置。 衬底附着系统可以有助于高附着精度，并且由于室的尺寸减小，空间利用率可能高，并且由于通过使用输送机输送装置连续地执行附接过程，因此， 时间可能会减少。

    Wafer cleaning method and wafer bonding method using the same
    2.
    发明授权
    Wafer cleaning method and wafer bonding method using the same 失效
    晶片清洗方法及使用其的晶片接合方法

    公开(公告)号：US08278186B2

    公开(公告)日：2012-10-02

    申请号：US12602285

    申请日：2007-10-31

    Applicant: Yong Won Cha ,  Dong Chul Kim

    Inventor： Yong Won Cha ,  Dong Chul Kim

    IPC: H01L21/30

    CPC classification number: H01L21/02052 ,  H01L21/02046 ,  H01L21/02054 ,  H01L21/0206 ,  H01L21/187 ,  H01L21/76251

    Abstract: The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber. The wafer bonding method includes the steps of: providing a first process chamber with a first wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the first wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the first wafer; withdrawing out the first wafer from the first process chamber and providing a second process chamber with the first wafer; providing a third process chamber with a second wafer whose bonding surface faces upward; cleaning and surface-treating the bonding surface of the second wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the second wafer; withdrawing out the second wafer from the third process chamber and providing the second process chamber with the second wafer whose bonding surface faces to the bonding surface of the first wafer and bonding the bonding surfaces of the first and second wafers to each other.

    Abstract translation: 本发明涉及使用这种方法的晶片清洗和晶片接合方法，其可以通过使用大气压等离子体和清洁溶液清洁晶片来提高清洁工艺的产率和粘合清洁晶片的接合性能。 晶片清洗方法包括以下步骤：向处理室提供接合面朝上的晶片，通过向晶片的接合表面供给大气压等离子体和清洗溶液来清洁和表面处理晶片的接合表面;以及 从处理室中取出晶片。 晶片接合方法包括以下步骤：向第一处理室提供接合面朝上的第一晶片; 通过向第一晶片的接合表面供应大气压等离子体和清洁溶液来清洁和表面处理第一晶片的接合表面; 从第一处理室中取出第一晶片并且提供具有第一晶片的第二处理室; 提供具有接合表面朝上的第二晶片的第三处理室; 通过向第二晶片的接合表面供应大气压等离子体和清洁溶液来清洁和表面处理第二晶片的结合表面; 从第三处理室中取出第二晶片，并向第二处理室提供第二晶片，其第二晶片的键合表面面向第一晶片的结合表面，并将第一和第二晶片的结合表面彼此结合。

    METHODS OF MANUFACTURING A THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES FABRICATED THEREBY
    3.
    发明申请
    METHODS OF MANUFACTURING A THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES FABRICATED THEREBY 有权
    制造三维半导体器件的方法及其制造的半导体器件

    公开(公告)号：US20070158831A1

    公开(公告)日：2007-07-12

    申请号：US11621513

    申请日：2007-01-09

    Applicant: Yong-Won CHA ,  Dong-Chul SUH ,  Dae-Lok BAE

    Inventor： Yong-Won CHA ,  Dong-Chul SUH ,  Dae-Lok BAE

    IPC: H01L23/34 ,  H01L21/00

    CPC classification number: H01L23/34 ,  H01L21/76254 ,  H01L21/84

    Abstract: A method of fabricating a three-dimensional semiconductor device is provided along with a three-dimensional semiconductor device fabricated thereby. The method includes forming a heat conductive plug to channel heat away from devices on a substrate, while high temperature processes are performed on a stacked semiconductor layer. The ability to use high temperature processes on the stacked semiconductor layer without adversely effecting devices on the substrate allows the formation of a high quality single-crystalline stacked semiconductor layer. The high quality single-crystalline semiconductor layer can then be used to fabricate improved thin film transistors.

    Abstract translation: 提供一种制造三维半导体器件的方法以及由此制造的三维半导体器件。 该方法包括形成导热塞以将热量从衬底上的器件引导出来，同时在堆叠的半导体层上进行高温处理。 在堆叠的半导体层上使用高温工艺而不会不利地影响衬底上的器件的能力允许形成高质量的单晶层叠半导体层。 然后可以使用高质量的单晶半导体层来制造改进的薄膜晶体管。

    Methods of fabricating semiconductor devices having laser-formed single crystalline active structures
    5.
    发明申请
    Methods of fabricating semiconductor devices having laser-formed single crystalline active structures 失效
    制造具有激光形成的单晶活性结构的半导体器件的方法

    公开(公告)号：US20080014726A1

    公开(公告)日：2008-01-17

    申请号：US11701694

    申请日：2007-02-02

    Applicant: Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

    Inventor： Yong-Won Cha ,  Sung-Kwan Kang ,  Pil-Kyu Kang ,  Yong-Hoon Son ,  Jong-Wook Lee

    IPC: H01L21/00

    CPC classification number: H01L21/31144 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02686 ,  H01L29/66651

    Abstract: Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.

    Abstract translation: 提供制造半导体器件的方法。 提供半导体衬底，其在至少其限定区域内包括单晶结构。 在半导体衬底上形成薄层。 图案化薄层以形成多个间隔开的场结构，并在其间具有单晶结构的半导体衬底的部分露出。 在具有单晶结构的半导体衬底的露出部分上形成非晶层。 非晶层被平坦化以暴露场结构的上表面并且从场结构之间的非晶层限定非结晶活性结构。 产生激光束，其加热非结晶活性结构以将其改变成具有与半导体衬底的限定区域基本上相同的单晶结构的单晶有源结构。

    SUBSTRATE BONDING SYSTEM AND MOBILE CHAMBER USED THERETO
    8.
    发明申请
    SUBSTRATE BONDING SYSTEM AND MOBILE CHAMBER USED THERETO 有权
    基板接合系统和移动电话室

    公开(公告)号：US20120298306A1

    公开(公告)日：2012-11-29

    申请号：US13577458

    申请日：2010-11-26

    Applicant: Yong-Won Cha ,  Sang Wook Yoo ,  Gun-Woo Park ,  Seung-Hee Jung

    Inventor： Yong-Won Cha ,  Sang Wook Yoo ,  Gun-Woo Park ,  Seung-Hee Jung

    IPC: B32B37/10 ,  B32B37/06

    CPC classification number: H01L21/6776 ,  H01L21/67092 ,  H01L21/6719

    Abstract: A substrate attachment system, including a portable chamber for receiving a pair of substrates which are aligned; a conveyor transportation device which continuously moves the portable chamber and to which a vacuum generator that is connected to a vacuum port of the portable chamber to evacuate the inside of the portable chamber is provided; and a heating device for performing a heating process in which the aligned substrates are attached to each other in the portable chamber, wherein the conveyor transportation device is arranged to pass through the heating device. The substrate attachment system may contribute to high attachment accuracy, and also, since the size of a chamber is reduced, a spatial utilization rate may be high, and also, since an attachment process is continuously performed by using a conveyor transportation device, a process time may be reduced.

    Abstract translation: 一种基板连接系统，包括用于接收对准的一对基板的便携式室; 提供了一种输送机输送装置，其连续地移动便携式室，并且提供连接到便携式室的真空端口以抽真空便携式室的内部的真空发生器。 以及用于进行加热处理的加热装置，其中对准的基板在便携式室中彼此附接，其中输送机输送装置布置成穿过加热装置。 衬底附着系统可以有助于高附着精度，并且由于室的尺寸减小，空间利用率可能高，并且由于通过使用输送机输送装置连续地执行附接过程，因此， 时间可能会减少。

    Methods of filling trenches using high-density plasma deposition (HDP)
    9.
    发明授权
    Methods of filling trenches using high-density plasma deposition (HDP) 有权
    使用高密度等离子体沉积（HDP）填充沟槽的方法

    公开(公告)号：US07598177B2

    公开(公告)日：2009-10-06

    申请号：US11402166

    申请日：2006-04-11

    Applicant: Yong-Won Cha ,  Kyu-tae Na

    Inventor： Yong-Won Cha ,  Kyu-tae Na

    IPC: H01L21/302

    CPC classification number: H01L21/76837 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76227

    Abstract: Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.

    Abstract translation: 提供了在集成电路基板上填充由电路元件限定的沟槽/间隙的方法。 所述方法包括使用第一反应气体在其上包括至少一个沟槽的集成电路衬底上形成第一高密度等离子体层。 使用包括氮化氢气体（NF 3）的蚀刻气体蚀刻第一高密度等离子体层。 使用包括氮化氟的第二反应气体，在蚀刻的第一高密度等离子体层上形成第二高密度等离子体层。

    Methods of Fabricating Silicon on Insulator (SOI) Wafers
    10.
    发明申请
    Methods of Fabricating Silicon on Insulator (SOI) Wafers 审中-公开
    在绝缘体（SOI）晶片上制造硅的方法

    公开(公告)号：US20090221133A1

    公开(公告)日：2009-09-03

    申请号：US12370783

    申请日：2009-02-13

    Applicant: Seung-Woo Choi ,  Dae-Lok Bae ,  Jong-Wook Lee ,  Yong-Won Cha ,  Pil-Kyu Kang ,  Jung-Ho Kim

    Inventor： Seung-Woo Choi ,  Dae-Lok Bae ,  Jong-Wook Lee ,  Yong-Won Cha ,  Pil-Kyu Kang ,  Jung-Ho Kim

    IPC: H01L21/762

    CPC classification number: H01L21/76254

    Abstract: Methods of fabricating SOI wafers are provided including providing a donor wafer and forming a hydrogen ion implantation layer in the donor wafer. A circumference portion of one side of the donor wafer is recessed to form a height difference. The one side of the donor wafer and a handle wafer are bonded to form a bonded wafer. The bonded wafer is heat treated to separate the bonded wafer along the hydrogen ion implantation layer.

    Abstract translation: 提供制造SOI晶片的方法包括提供施主晶片并在施主晶片中形成氢离子注入层。 供体晶片的一侧的周边部分被凹入以形成高度差。 供体晶片和处理晶片的一侧被结合以形成接合晶片。 接合的晶片被热处理以沿着氢离子注入层分离键合的晶片。

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