公开(公告)号：US4980730A

公开(公告)日：1990-12-25

申请号：US388809

申请日：1989-08-03

申请人： Osamu Mishima ,  Shinobu Yamaoka ,  Osamu Fukunaga ,  Junzo Tanbaka ,  Koh Era

发明人： Osamu Mishima ,  Shinobu Yamaoka ,  Osamu Fukunaga ,  Junzo Tanbaka ,  Koh Era

IPC分类号： B01J3/06 ,  C30B9/00 ,  H01L33/00 ,  H01L33/32 ,  H01L33/50

CPC分类号： C30B9/00 ,  B01J3/062 ,  C30B29/38 ,  H01L33/0075 ,  H01L33/325 ,  H01L33/502 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/068

摘要： A method for growing a single crystal of a cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.

摘要翻译： 一种用于在高压和高温条件下密封的生长容器中生长立方氮化硼半导体的单晶的方法，该方法包括在含掺杂剂的氮化硼溶剂中溶解放置在高温区中的氮化硼原料 并且向溶剂提供温度梯度，使得溶解度的温度依赖性被用于使单晶形成并在生长的容器中的低温区域生长。