cBN semiconductor device having an ohmic electrode and a method of
making the same
    3.
    发明授权
    cBN semiconductor device having an ohmic electrode and a method of making the same 失效
    具有欧姆电极的cBN半导体器件及其制造方法

    公开(公告)号:US5414279A

    公开(公告)日:1995-05-09

    申请号:US124754

    申请日:1993-09-22

    摘要: An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

    摘要翻译: 在cBN晶体上形成欧姆电极,形成用作固体电子元件的cBN半导体器件。 cBN半导体器件可以是n型,p型或pn结型,其中钼沉积到cBN晶体的n型掺杂区上,或者铂沉积到p型掺杂区上,从而形成 具有欧姆特性的电极。 通过使用气相沉积法,在惰性气体气氛中,在300℃〜1100℃的温度下加热附着物,进行钼或铂的沉积。 cBN半导体器件可以用作固体电子元件或用于整流器,晶体管,发光二极管等的光电元件及其集成元件。

    Method of making cBN semiconductor device having an ohmic electrode
    4.
    发明授权
    Method of making cBN semiconductor device having an ohmic electrode 失效
    制造具有欧姆电极的cBN半导体器件的方法

    公开(公告)号:US5444017A

    公开(公告)日:1995-08-22

    申请号:US305658

    申请日:1994-09-14

    摘要: An ohmic electrode is formed on a cBN crystal to form a cBN semiconductor device which is used as a solid electronic element. The cBN semiconductor device may be of an n-type, a p-type or a pn junction type wherein molybdenum is deposited onto an n-type doped region of the cBN crystal or platinum is deposited onto a p-type doped region to thereby form an electrode with ohmic characteristic. The deposition of the molybdenum or the platinum is conducted by using a vapor deposition method followed by heating the attached substance at a temperature of 300.degree. C.-1100.degree. C. in an inactive gas atmosphere. The cBN semiconductor device can be used as a solid electronic element or an optoelectronic element for rectifiers, transistors, light emitting diodes and so on and integrated elements thereof.

    摘要翻译: 在cBN晶体上形成欧姆电极,形成用作固体电子元件的cBN半导体器件。 cBN半导体器件可以是n型,p型或pn结型,其中钼沉积到cBN晶体的n型掺杂区上,或者铂沉积到p型掺杂区上,从而形成 具有欧姆特性的电极。 通过使用气相沉积法,在惰性气体气氛中,在300℃〜1100℃的温度下加热附着物,进行钼或铂的沉积。 cBN半导体器件可以用作固体电子元件或用于整流器,晶体管,发光二极管等的光电元件及其集成元件。

    Production planning system
    6.
    发明授权
    Production planning system 失效
    生产计划制度

    公开(公告)号:US07039481B2

    公开(公告)日:2006-05-02

    申请号:US10357470

    申请日:2003-02-04

    IPC分类号: G06F19/00

    摘要: The production of semiconductor devices manufactured through a plurality of manufacturing sites is unitarily managed and an appropriate production plan is instructed. A computer projects a production plan of an entire company based on various information. The production plan is provided to each manufacturing site as a production instruction and provided to each business person or customer as a storing reply or an order accepting period reply. If the projected production plan (possible production volume) does not coincide with a production plan (necessary production volume), parameters obtained by correcting production allocation, production capability, lead time, yield and the like are re-input from a parameter input terminal. Based on the corrected parameters, the computer re-projects the production plan and projects an optimum production plan.

    摘要翻译: 通过多个制造场所制造的半导体器件的生产是一体管理的,并且指示了适当的生产计划。 计算机根据各种信息对整个公司的生产计划进行预测。 生产计划作为生产指导提供给每个制造现场,并作为存储答复或订单接受期回复提供给每个业务人员或客户。 如果预计的生产计划(可能的生产量)与生产计划(必要的生产量)不一致,则通过参数输入端重新输入通过校正生产分配,生产能力,提前期,产量等获得的参数。 根据修正的参数,计算机重新计划生产计划并制定最佳的生产计划。

    Slide driving apparatus of press machine
    7.
    发明授权
    Slide driving apparatus of press machine 失效
    压力机滑动驱动装置

    公开(公告)号:US5226337A

    公开(公告)日:1993-07-13

    申请号:US828045

    申请日:1992-01-30

    IPC分类号: B30B1/26 B30B15/00

    摘要: A Slide driving apparatus of press machine, wherein a main gear 3 as a rotational drive member and a lever member 10 as a driven member are opposed to one another in a eccentric state which an axes O.sub.1 and O.sub.2 are separated, the main gear 3 and the lever member 10 being connected to one another by a connecting member 13 consisting of a pin member 11 and a bush member 12. A drive rotation locus A which can be traced, round the axis O.sub.1, by a movement of a connecting center O.sub.5 where the main gear 3 and the connecting member 13 are connected, and a driven rotation locus B which can be traced, round the axis O.sub.2, by a movement of a connecting center O.sub.4 where the lever member 10 and the connecting member 13 are connected, intersect one another at points of C and D. A slide of the press machine is connected, by the connecting rod, to an eccentric portion 8A of the crankshaft 8 where the lever member 10 is fixed.