公开(公告)号：US20100117175A1

公开(公告)日：2010-05-13

申请号：US12591066

申请日：2009-11-06

申请人： Yoshinori Shizuno

发明人： Yoshinori Shizuno

IPC分类号： H01L31/0232

CPC分类号： H01L31/02325 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05599

摘要： A semiconductor module including a semiconductor chip having a light receiving device formed at a front thereof and a light permeable cover having a front, a back, and a side. The light permeable cover is disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the light permeable cover. The light permeable cover is provided at the outer circumferential region of the front thereof and at the side thereof with a light shielding layer. It is possible to prevent the incidence of unnecessary light from the side of the light permeable cover of a CSP and to easily adjust the distance between a lens and the front of the semiconductor chip within tolerance.

摘要翻译： 一种半导体模块，包括具有形成在其前面的光接收装置的半导体芯片和具有正面，背面和侧面的透光罩。 透光性盖与半导体芯片的前方相对设置，使得半导体芯片的前部被透光性盖的背面覆盖。 透光性盖设置在其前部的外周区域处，并且在其一侧设置有遮光层。 可以防止来自CSP的透光性盖侧的不必要的光的入射，并容易地调节透镜与半导体芯片的前端之间的距离。

公开(公告)号：US07863690B2

公开(公告)日：2011-01-04

申请号：US12713524

申请日：2010-02-26

申请人： Katsutoshi Saeki ,  Yoshitaka Satou

发明人： Katsutoshi Saeki ,  Yoshitaka Satou

IPC分类号： H01L21/00

CPC分类号： H01L27/105 ,  H01L27/115 ,  H01L27/11568 ,  H01L27/11573

摘要： A semiconductor device includes a first field effect transistor and a second field effect transistor. The first field effect transistor includes a first gate electrode formed; first impurity diffused areas; and first sidewall portions. The first sidewall portions include a first lower insulation film and a first charge accumulation film. The second field effect transistor includes a second gate electrode; second impurity diffused areas; and second sidewall portions. The second sidewall portions include a second lower insulation film and a second charge accumulation film. The first lower insulation film contains one of a silicon thermal oxide film and a non-doped silicate glass, and the second lower insulation film contains a non-doped silicate glass. The second sidewall portions have a width along a gate longitudinal direction larger than that of the first sidewall portions. The second lower insulation film has a thickness larger than that of the first lower insulation film.

摘要翻译： 半导体器件包括第一场效应晶体管和第二场效应晶体管。 第一场效应晶体管包括形成的第一栅电极; 第一杂质扩散区; 和第一侧壁部分。 第一侧壁部分包括第一下绝缘膜和第一电荷累积膜。 第二场效应晶体管包括第二栅电极; 第二杂质扩散区; 和第二侧壁部分。 第二侧壁部分包括第二下绝缘膜和第二电荷累积膜。 第一下部绝缘膜包含硅热氧化物膜和非掺杂硅酸盐玻璃之一，第二下部绝缘膜含有未掺杂的硅酸盐玻璃。 第二侧壁部分沿着栅极纵向的宽度大于第一侧壁部分的宽度。 第二下绝缘膜的厚度大于第一下绝缘膜的厚度。