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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130248854A1

    公开(公告)日：2013-09-26

    申请号：US13899736

    申请日：2013-05-22

    申请人： Seminconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Miyuki Hosoba ,  Suzunosuke Hiraishi

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0041 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

    摘要翻译： 公开了一种半导体器件，其包括薄膜晶体管和连接到薄膜晶体管的布线，其中薄膜晶体管在氧化物半导体层中具有沟道形成区域，并且铜金属用于栅电极中的至少一个 源电极，漏电极，栅极布线，源极布线和漏极布线。 具有氧化物半导体层的晶体管的极低的截止电流有助于降低半导体器件的功耗。 此外，铜金属的使用允许半导体器件与显示元件的组合提供具有高显示质量和可忽略的缺陷的显示器件，这是由于由铜金属形成的布线和电极的低电阻引起的。

    Semiconductor device and manufacturing method thereof
    4.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US09202927B2

    公开(公告)日：2015-12-01

    申请号：US14456313

    申请日：2014-08-11

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki

    IPC分类号： H01L29/66 ,  H01L21/84 ,  H01L29/786 ,  H01L29/49 ,  H01L29/10 ,  H01L29/24

    CPC分类号： H01L29/7869 ,  H01L29/1054 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

    摘要： An object is to provide a transistor in which the state of an interface between an oxide semiconductor layer and an insulating film (gate insulating layer) in contact with the oxide semiconductor layer is favorable; and a method for manufacturing the transistor. In order to obtain the transistor, nitrogen is added to a region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer. Specifically, a concentration gradient of nitrogen is formed in the oxide semiconductor layer, and a region containing much nitrogen is provided at the interface with the gate insulating layer. By the addition of nitrogen, a region with high crystallinity can be formed in the region of the oxide semiconductor layer in the vicinity of the interface with the gate insulating layer, so that a stable interface state can be obtained.

    摘要翻译： 目的在于提供一种晶体管，其中与氧化物半导体层接触的氧化物半导体层和绝缘膜（栅极绝缘层）之间的界面的状态是有利的; 以及晶体管的制造方法。 为了获得晶体管，在与栅极绝缘层的界面附近，在氧化物半导体层的区域添加氮。 具体地，在氧化物半导体层中形成氮的浓度梯度，并且在与栅绝缘层的界面处设置含有大量氮的区域。 通过添加氮，可以在与栅极绝缘层的界面附近的氧化物半导体层的区域中形成具有高结晶度的区域，从而可以获得稳定的界面状态。