Abstract:
Disclosed is a display device including: a first TFT implemented as a Low-Temperature Polycrystalline Silicon (LTPS) TFT; a second TFT implemented as an oxide TFT stacked on the LTPS TFT; and a light emitting device formed next to a structure in which the first TFT and the second TFT are stacked, in which one electrode of the first TFT is connected to a gate of the second TFT, and one electrode of the second TFT is connected to the light emitting device.
Abstract:
An optical fingerprint recognition sensor may improve internal light utilization efficiency and includes: a glass substrate; a protection layer that is positioned on the glass substrate; an active layer that is positioned above the glass substrate and in the protection layer; and a functional layer that is positioned in the protection layer and on the active layer and that includes a first transparent oxide layer and a first metal layer that are sequentially stacked.
Abstract:
Provided is a thin film transistor liquid crystal display (TFT LCD) in which a capacitive touch sensor is embedded, the TFT LCD comprising: a touch sensor source follower TFT formed on a substrate; a first electrode connected to a gate electrode of the touch sensor source follower TFT; a touch sensor reset TFT including the first electrode; an insulator film formed on the first electrode; a second electrode formed on the insulator film; and a display switching TFT including the second electrode, wherein the second electrode is connected to a drain electrode of the display switching TFT; the touch sensor reset TFT and the gate electrode of the touch sensor source follower TFT share the first electrode; and the first electrode is connected to the gate electrode of the touch sensor source follower TFT.
Abstract:
The present invention relates to an optical thin film transistor-type fingerprint sensor, which comprises a backlight unit for irradiating light, including at least one of a red light source, the green light source and the infrared light source; and a photo sensor unit for sensing light irradiated from the backlight unit and reflected by a fingerprint of a user.
Abstract:
The present invention relates to an optical fingerprint sensor which can comprise: a backlight unit for irradiating light; an uneven surface layer onto which the light from the backlight unit is irradiated; and a photosensor unit arranged between the backlight unit and the uneven surface layer so as to detect the light irradiated from the backlight unit and reflected from a user's fingerprint coming into contact with the uneven surface layer.
Abstract:
Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.
Abstract:
Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes.The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.
Abstract:
A display device includes: a first-color light emitting diode (LED); thin film transistors (TFTs) and wires located on the first-color LED; a second-color LED located in a first area on the TFTs and the wires; a third-color LED located in a second area on the TFTs and the wires; a plurality of wires located between the first area and the second area; and a plurality of pads connected to the plurality of wires.
Abstract:
A display apparatus according to an embodiment includes a plurality of display modules including a display region where a plurality of pixels are positioned and a non-display region outside the display region, wherein, for two display modules adjacent among a plurality of display modules to provide a continuous display region, the display region of the first display module among two adjacent display modules and the non-display region of the second display module among the two adjacent display modules overlap each other in a plane view.
Abstract:
A sensor pixel according to a feature of the present invention includes: a detection electrode that forms capacitance with a recognition target; and a sensor pixel circuit that is connected to the detection electrode, generates a detection signal by using the detection electrode, and to which a DC voltage for resetting is supplied, wherein a coupling pulse is periodically applied to the recognition target that forms the capacitance with the detection electrode, and the detection signal may be changed according to the coupling pulse.