Suture anchor
    4.
    发明授权

    公开(公告)号:US11452515B2

    公开(公告)日:2022-09-27

    申请号:US15057077

    申请日:2016-02-29

    发明人: Mark D. Brunsvold

    IPC分类号: A61B17/04

    摘要: An anchor device and system for coupling soft tissue to osseous tissue includes a stopper member that supports a loop of suture material. A fixing member includes features that allow it to be rigidly coupled to surrounding bone and thus hold the stopper member in a cavity within the bone. The loop of suture material, in turn, supports a second suture device, which is coupled to, and thus retains, the soft tissue. In certain embodiments, the stopper member includes a mechanical linkage for coupling it to the fixing member, and surface features that resist withdrawal of the fixing member from the bone.

    Therapeutic back support and stabilization

    公开(公告)号:US10271659B2

    公开(公告)日:2019-04-30

    申请号:US14853814

    申请日:2015-09-14

    发明人: Mark Powicki

    摘要: A therapeutic back support device including a back support portion that automatically and repeatedly moves forward to maintain engagement with a user's back as the user moves forward with respect to a chair seat. The back support portion substantially resists backward motion and provides substantially continuous therapeutic support to the user's spine pending a release signal.

    Complex mass trajectories for improved haptic effect

    公开(公告)号:US11465175B2

    公开(公告)日:2022-10-11

    申请号:US17074559

    申请日:2020-10-19

    IPC分类号: B06B1/04

    摘要: A haptic actuator includes mechanical links defining a first J-trajectory and mechanical links defining a second J-trajectory as well as a motor coupled to the mechanical links so as to synchronously accelerate a first mass over the first J-trajectory and a second mass over the second J-trajectory. During a first time interval, reactive forces of the first mass accelerating substantially balance reactive forces of the second mass accelerating and during a second time interval reactive forces of the first mass accelerating do not substantially balance reactive forces of the second mass accelerating. This un-balanced condition results in a tap signal being produced.

    Doping and trap profile engineering in GaN buffer to maximize AlGaN/GaN HEMT EPI stack breakdown voltage

    公开(公告)号:US11031493B2

    公开(公告)日:2021-06-08

    申请号:US16431151

    申请日:2019-06-04

    摘要: The present invention proposes a set of impurity doping configurations for GaN buffer in an AlGaN/GaN HEMT device to improve breakdown characteristics of the device. The breakdown characteristics depend on a unique mix of donor and acceptor traps and using carbon as a dopant increases both donor and acceptor trap concentrations, resulting in a trade-off in breakdown voltage improvement and device performance. A modified silicon and carbon co-doping is proposed, which enables independent control over donor and acceptor trap concentrations in the buffer, thus potentially improving breakdown characteristics of the device without adversely affecting the device performance.