-
公开(公告)号：US20240158907A1
公开(公告)日：2024-05-16
申请号：US18192991
申请日：2023-03-30
发明人： Chien-Hsun CHUANG
CPC分类号： C23C14/165 , C23C14/46
摘要： A nano-twinned ultra-thin metallic film structure is provided. The nano-twinned ultra-thin metallic film structure includes a substrate and a nano-twinned metallic thin film on the surface of the substrate. The nano-twinned metallic thin film has a thickness of 0.5 μm to 3 μm and includes silver, copper, gold, palladium or nickel. The nano-twinned metallic thin film has a transition layer near the substrate and a twin layer away from the substrate. The twin layer accounts for at least 70% of the thickness of the nano-twinned metallic thin film and has parallel-arranged twin boundaries. The parallel-arranged twin boundaries include more than 50% (111) crystal orientation. The nano-twinned ultra-thin metallic film structure is formed by activating the substrate surface using ion beam bombardment, followed by performing a sputtering process on the activated substrate surface with a substrate bias.
-
公开(公告)号：US11488920B2
公开(公告)日：2022-11-01
申请号：US16844972
申请日：2020-04-09
发明人： Hsing-Hua Tsai , An-Chi Chuang , Po-Ching Wu , Chung-Hsin Chou
IPC分类号： H01L23/00
摘要： A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include Σ3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries include 95% or more crystal orientation.
-
公开(公告)号：US20220344298A1
公开(公告)日：2022-10-27
申请号：US17460153
申请日：2021-08-27
发明人： Tung-Han CHUANG , Hsing-Hua TSAI
IPC分类号： H01L23/00
摘要： A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.
-
公开(公告)号：US20230027664A1
公开(公告)日：2023-01-26
申请号：US17699048
申请日：2022-03-18
发明人： Tung-Han CHUANG , Hsing-Hua TSAI
IPC分类号： H01L23/00
摘要： A bonding structure is provided, including a first substrate; a second substrate disposed opposite the first substrate; a first bonding layer disposed on the first substrate; a second bonding layer disposed on the second substrate and opposite the first bonding layer; and a silver feature disposed between the first bonding layer and the second bonding layer. The silver feature includes a silver nano-twinned structure including parallel twin boundaries. The silver nano-twinned structure includes 90% or more [111] crystal orientation. A method for forming a bonding structure is also provided. Each of steps of forming a first silver feature and second silver feature includes sputtering or evaporation coating. Negative bias ion bombardment is applied to the first silver feature and second silver feature during sputtering or evaporation.
-
公开(公告)号：US11837568B2
公开(公告)日：2023-12-05
申请号：US17460153
申请日：2021-08-27
发明人： Tung-Han Chuang , Hsing-Hua Tsai
IPC分类号： H01L23/00
CPC分类号： H01L24/29 , H01L24/27 , H01L24/32 , H01L24/83 , H01L2224/2745 , H01L2224/29007 , H01L2224/29139 , H01L2224/29541 , H01L2224/29582 , H01L2224/29666 , H01L2224/29671 , H01L2224/29684 , H01L2224/32147 , H01L2224/8383 , H01L2224/83895 , H01L2924/35121
摘要： A bonding structure is provided, wherein the bonding structure includes a first substrate, a second substrate, a first adhesive layer, a second adhesive layer, and a silver feature. The second substrate is disposed opposite to the first substrate. The first adhesive layer is disposed on the first substrate. The second adhesive layer is disposed on the second substrate and opposite the first adhesive layer. The silver feature is disposed between the first adhesive layer and the second adhesive layer. The silver feature includes a silver nano-twinned structure that includes twin boundaries that are arranged in parallel. The parallel-arranged twin boundaries include 90% or more [111] crystal orientation.
-
公开(公告)号：US20240170434A1
公开(公告)日：2024-05-23
申请号：US18193012
申请日：2023-03-30
发明人： Chien-Hsun CHUANG
IPC分类号： H01L23/00
CPC分类号： H01L24/29 , H01L24/27 , H01L2224/2745 , H01L2224/29082 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29166 , H01L2224/29171
摘要： A back side metallization thin film structure is provided, which includes a wafer and a metallic nano-twinned thin film on the back side of the wafer. A plurality of integrated circuit devices are formed on the front side of the wafer. The metallic nano-twinned thin film includes silver, copper, gold, palladium, or nickel. The metallic nano-twinned thin film has a transition layer near the wafer and a twin layer away from the wafer. The twin layer accounts for at least 70% of the thickness of the metallic nano-twinned thin film and includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include more than 50% of (111) crystal orientation. The back side metallization thin film structure is formed by activating the wafer surface by ion beam bombardment, followed by an evaporation deposition process performed on the activated wafer surface with simultaneous ion beam bombardment.
-
公开(公告)号：US20230090030A1
公开(公告)日：2023-03-23
申请号：US17833822
申请日：2022-06-06
发明人： Tung-Han CHUANG , Po-Ching WU , Pei-Ing LEE , Hsing-Hua TSAI
IPC分类号： H01L23/00
摘要： A nano-twinned structure on a metallic thin film surface is provided. The nano-twinned structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a metallic thin film including Ag, Cu, Au, Pd or Ni over the adhesive-lattice-buffer layer. The bottom region of the metallic thin film has equi-axial coarse grains. The surface region of the metallic thin film contains parallel-arranged high-density twin boundaries (Σ3+Σ9) with a pitch from 1 nm to 100 nm. The quantity of the parallel-arranged twin boundaries is 50% to 80% of the total quantity of twin boundaries in the cross-sectional view of the metallic thin film. The parallel-arranged twin boundaries include 30% to 90% [111] crystal orientation. The nano-twinned structure on the metallic thin film surface is formed through a post-deposition ion bombardment on the evaporated metallic thin film surface after the evaporation process.
-
公开(公告)号：US20230057312A1
公开(公告)日：2023-02-23
申请号：US17488171
申请日：2021-09-28
发明人： Tung-Han CHUANG , Po-Ching WU , Pei-Ing LEE , Hsing-Hua TSAI
IPC分类号： C23C28/02
摘要： A metallic nano-twinned thin film structure and a method for forming the same are provided. The metallic nano-twinned thin film structure includes a substrate, an adhesive-lattice-buffer layer over the substrate, and a single-layer or multi-layer metallic nano-twinned thin film over the adhesive-lattice-buffer layer. The metallic nano-twinned thin film includes parallel-arranged twin boundaries (Σ3+Σ9). In a cross-sectional view of the metallic nano-twinned thin film, the parallel-arranged twin boundaries account for 30% to 90% of total twin boundaries. The parallel-arranged twin boundaries include 80% to 99% of crystal orientation [111]. The single-layer metallic nano-twinned thin film includes copper, gold, palladium or nickel. The multi-layer metallic nano-twinned thin films are respectively composed of silver, copper, gold, palladium or nickel.
-
公开(公告)号：US20220336407A1
公开(公告)日：2022-10-20
申请号：US17473964
申请日：2021-09-13
发明人： Tung-Han CHUANG , Hsing-Hua TSAI
IPC分类号： H01L23/00
摘要： A die bonding structure is provided. The die bonding structure includes a chip, an adhesive layer under the chip, a bonding layer under the adhesive layer, and a heat dissipation substrate under the bonding layer. The bonding layer includes a silver nano-twinned thin film, which has parallel-arranged twin boundaries. The parallel-arranged twin boundaries include at least 90% of [111] crystal orientation.
-
公开(公告)号：US20210225793A1
公开(公告)日：2021-07-22
申请号：US16844972
申请日：2020-04-09
发明人： Hsing-Hua TSAI , An-Chi CHUANG , Po-Ching WU , Chung-Hsin CHOU
IPC分类号： H01L23/00
摘要： A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include Σ 3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries include 95% or more crystal orientation.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.018 秒)
