Multiple lithographic system mask shape sleeving
    1.
    发明授权
    Multiple lithographic system mask shape sleeving 有权
    多个平版印刷系统面罩形状套管

    公开(公告)号:US08518611B2

    公开(公告)日:2013-08-27

    申请号:US13007242

    申请日:2011-01-14

    CPC classification number: G03F7/203 G03F1/68

    Abstract: A mask fabrication method can include receiving a mask design, sending first exposure parameters to a first exposure machine, sending second exposure parameters to a second exposure machine, sending a first exposure generation command to the first machine based on the first exposure parameters and sending a second exposure generation command to the second machine based on the second exposure parameters.

    Abstract translation: 掩模制造方法可以包括接收掩模设计,将第一曝光参数发送到第一曝光机,向第二曝光机发送第二曝光参数,基于第一曝光参数向第一机器发送第一曝光生成命令,并发送 基于第二曝光参数向第二机器提供第二曝光生成命令。

    MULTIPLE LITHOGRAPHIC SYSTEM MASK SHAPE SLEEVING
    2.
    发明申请
    MULTIPLE LITHOGRAPHIC SYSTEM MASK SHAPE SLEEVING 有权
    多层次光刻系统掩模形状

    公开(公告)号:US20120183889A1

    公开(公告)日:2012-07-19

    申请号:US13007242

    申请日:2011-01-14

    CPC classification number: G03F7/203 G03F1/68

    Abstract: A mask fabrication method can include receiving a mask design, sending first exposure parameters to a first exposure machine, sending second exposure parameters to a second exposure machine, sending a first exposure generation command to the first machine based on the first exposure parameters and sending a second exposure generation command to the second machine based on the second exposure parameters.

    Abstract translation: 掩模制造方法可以包括接收掩模设计,将第一曝光参数发送到第一曝光机,向第二曝光机发送第二曝光参数,基于第一曝光参数向第一机器发送第一曝光生成命令,并发送 基于第二曝光参数向第二机器提供第二曝光生成命令。

    Photoresist trimming process
    4.
    发明授权
    Photoresist trimming process 失效
    光刻胶修边工艺

    公开(公告)号:US07304000B2

    公开(公告)日:2007-12-04

    申请号:US10711043

    申请日:2004-08-19

    Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

    Abstract translation: 提供光致抗蚀剂修整气体化合物,其将从光刻胶的侧壁的下部选择性地去除抗蚀剂底脚或浮渣。 此外,修剪剂化合物硬化或韧化光致抗蚀剂的上表面,从而加强光致抗蚀剂。 修剪剂化合物包括O 2 CO 2和至少一种其它气态氧化物,并且通常在干蚀刻工艺中用于在光致抗蚀剂中形成沟槽之后。除O 2 可以包括CO 2,SO 2和NO 2。

    Elastomeric suspension and mounting system
    5.
    发明授权
    Elastomeric suspension and mounting system 有权
    弹性悬挂和安装系统

    公开(公告)号:US06676116B2

    公开(公告)日:2004-01-13

    申请号:US09899730

    申请日:2001-07-05

    CPC classification number: F16F15/08 F16F1/445 F16F2230/0047

    Abstract: A vibration isolator is provided that includes a plurality of elastomeric members. The vibration isolator also includes first and second supports. The first and second supports cooperate with the plurality of elastomeric members to isolate and damp vibration between the first and second supports. The first support defines a first raised portion. The second support is spaced from the first support and defines a second raised portion facing the first support. The first and second raised portions are structured to cooperate so as to define a recess therebetween adapted to at least partially receive at least one elastomeric member. The vibration isolator also includes at least one fastener that is structured to mount the at least one elastomeric member between the first and second supports such that the elastomeric member(s) isolates and damps vibration transmitted between the first and second supports.

    Abstract translation: 提供了一种隔振器,其包括多个弹性构件。 隔振器还包括第一和第二支撑件。 第一和第二支撑件与多个弹性体构件协作以隔离和减弱第一和第二支撑件之间的振动。 第一支撑件限定第一凸起部分。 第二支撑件与第一支撑件间隔开并且限定面向第一支撑件的第二凸起部分。 第一和第二凸起部分构造成协作以便在其间限定适于至少部分地容纳至少一个弹性体构件的凹部。 隔振器还包括至少一个紧固件,其被构造成在第一和第二支撑件之间安装至少一个弹性体构件,使得弹性体构件隔离并阻止在第一和第二支撑件之间传递的振动。

    Photoresist trimming process
    6.
    发明授权
    Photoresist trimming process 有权
    光刻胶修边工艺

    公开(公告)号:US07955988B2

    公开(公告)日:2011-06-07

    申请号:US11862255

    申请日:2007-09-27

    Abstract: A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2 and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2 may include CO2, SO2 and NO2.

    Abstract translation: 提供光致抗蚀剂修整气体化合物,其将从光刻胶的侧壁的下部选择性地去除抗蚀剂底脚或浮渣。 此外,修剪剂化合物硬化或韧化光致抗蚀剂的上表面,从而加强光致抗蚀剂。 修剪剂化合物包括O 2和至少一种其它气态氧化物,并且在光致抗蚀剂中形成沟槽之后通常用于干蚀刻工艺。 除了O2之外的其它氧化物气体可以包括CO 2,SO 2和NO 2。

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