公开(公告)号：US07217989B2

公开(公告)日：2007-05-15

申请号：US11251880

申请日：2005-10-18

申请人： Ai Hiramitsu ,  Takashi Ito ,  Tetsuji Hori

发明人： Ai Hiramitsu ,  Takashi Ito ,  Tetsuji Hori

IPC分类号： H01L23/58

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride layer is obtainable, and a polishing method employing such a composition. A polishing composition which has silicon oxide abrasive grains, an acidic additive and water, wherein the acidic additive is such that when it is formed into a 85 wt % aqueous solution, the chemical etching rate of the silicon nitride layer is at most 0.1 nm/hr in an atmosphere of 80° C. Particularly preferred is one wherein the silicon oxide abrasive grains have an average particle size of from 1 to 50 nm, and the pH of the composition is from 3.5 to 6.5.

摘要翻译： 为了提供一种抛光组合物，其中氮化硅层的原料去除率高于氧化硅层的原料去除率，对抛光平面化基本上没有不利影响，并且氮化硅层的充分的除屑率为 以及使用这种组合物的抛光方法。 一种具有氧化硅磨粒，酸性添加剂和水的抛光组合物，其中所述酸性添加剂使得当其形成为85重量％的水溶液时，所述氮化硅层的化学蚀刻速率为至多0.1nm / hr。特别优选的是其中氧化硅磨粒的平均粒度为1〜50nm，组合物的pH为3.5〜6.5。

公开(公告)号：US20080125017A1

公开(公告)日：2008-05-29

申请号：US11943159

申请日：2007-11-20

申请人： Mikikazu Shimizu ,  Takehiko Nakajima ,  Takashi Ito ,  Ai Hiramitsu

发明人： Mikikazu Shimizu ,  Takehiko Nakajima ,  Takashi Ito ,  Ai Hiramitsu

IPC分类号： B24B1/00 ,  C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： To provide a polishing composition which is capable of selectively polishing a silicon oxide film against a polysilicon film, and a polishing method employing such a polishing composition.The polishing composition of the present invention comprises abrasive grains selected from silica and ceria; an alkali selected from ammonia, an ammonium salt, an alkali metal salt and an alkali metal hydroxide; and an organic modified silicone oil selected from a polyoxyethylene-modified silicone oil, a poly(oxyethyleneoxypropylene)-modified silicone oil, an epoxy/polyether-modified silicone oil and an amino/polyether-modified silicone oil.

摘要翻译： 提供能够选择性地对多晶硅膜抛光氧化硅膜的抛光组合物和使用这种抛光组合物的抛光方法。 本发明的抛光组合物包含选自二氧化硅和二氧化铈的磨料颗粒; 选自氨，铵盐，碱金属盐和碱金属氢氧化物的碱; 和选自聚氧乙烯改性硅油，聚（氧乙烯氧丙烯）改性硅油，环氧/聚醚改性硅油和氨基/聚醚改性硅油的有机改性硅油。

公开(公告)号：US20060084270A1

公开(公告)日：2006-04-20

申请号：US11251880

申请日：2005-10-18

申请人： Ai Hiramitsu ,  Takashi Ito ,  Tetsuji Hori

发明人： Ai Hiramitsu ,  Takashi Ito ,  Tetsuji Hori

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： To provide a polishing composition whereby the stock removal rate of a silicon nitride layer is higher than the stock removal rate of a silicon oxide layer, there is substantially no adverse effect against polishing planarization, and a sufficient stock removal rate of a silicon nitride layer is obtainable, and a polishing method employing such a composition. A polishing composition which comprises silicon oxide abrasive grains, an acidic additive and water, wherein the acidic additive is such that when it is formed into a 85 wt % aqueous solution, the chemical etching rate of the silicon nitride layer is at most 0.1 nm/hr in an atmosphere of 80° C. Particularly preferred is one wherein the silicon oxide abrasive grains have an average particle size of from 1 to 50 nm, and the pH of the composition is from 3.5 to 6.5.

摘要翻译： 为了提供一种抛光组合物，其中氮化硅层的原料去除率高于氧化硅层的原料去除率，对抛光平面化基本上没有不利影响，并且氮化硅层的充分的除屑率为 以及使用这种组合物的抛光方法。 一种抛光组合物，其包含氧化硅磨粒，酸性添加剂和水，其中所述酸性添加剂使得当其形成为85重量％的水溶液时，所述氮化硅层的化学蚀刻速率为至多0.1nm / hr。特别优选的是其中氧化硅磨粒的平均粒度为1〜50nm，组合物的pH为3.5〜6.5。