公开(公告)号：US5688331A

公开(公告)日：1997-11-18

申请号：US673599

申请日：1996-07-01

申请人： Michio Aruga ,  Atsunobu Ohkura ,  Akihiko Saito ,  Kenji Suzuki ,  Kenichi Taguchi ,  Dale Robert DuBois ,  Alan Ferris Morrison

发明人： Michio Aruga ,  Atsunobu Ohkura ,  Akihiko Saito ,  Kenji Suzuki ,  Kenichi Taguchi ,  Dale Robert DuBois ,  Alan Ferris Morrison

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/4586 ,  C23C16/46

摘要： In CVD processes susceptors can be made of a thermally conductive ceramic such as aluminum nitride which has superior durability with respect to fluorine plasma. Such aluminum nitride susceptors can include an embedded heater element and/or embedded ground or RF electrodes which as a result of their embedment are protected from the deleterious effects of the processing chamber environment. The conductors leading to these elements are protected from exposure to the process chamber environment by passing through a cylindrical member filled with inert gas supporting the wafer support plate of said susceptor. Alternately, the conductors leading to these elements can be run through passages in a hermetically sealed stem supporting the susceptor wafer support plate. The stem passes through the wall of the processing chamber so that connections to the susceptor wafer support plate can be made outside the processing chamber. Such a stem supporting the susceptor support plate can also provide passages for passing vacuum and purge gas to the back of the wafer support plate. Vacuum and purge gas can then be distributed through passages in the wafer support plate as appropriate to its top surface for a vacuum chuck and perimeter purge gas flow.

摘要翻译： 在CVD工艺中，感受体可以由诸如氮化铝的导热陶瓷制成，其相对于氟等离子体具有优异的耐久性。 这种氮化铝基座可以包括嵌入式加热器元件和/或嵌入式接地或RF电极，其作为其嵌入的结果被保护免受处理室环境的有害影响。 导向这些元件的导体通过穿过填充有支撑所述基座的晶片支撑板的惰性气体的圆柱形构件来防止暴露于处理室环境。 或者，导向这些元件的导体可以在支撑基座晶片支撑板的密封的阀杆中通过通道。 杆穿过处理室的壁，使得可以在处理室外部与基座晶片支撑板的连接。 支撑感受器支撑板的这种杆也可以提供用于将真空和吹扫气体通过到晶片支撑板背面的通道。 然后可以将真空和吹扫气体通过晶片支撑板中的通道分配到其顶部表面，用于真空吸盘和周边吹扫气体流。

公开(公告)号：US5935338A

公开(公告)日：1999-08-10

申请号：US606267

申请日：1996-02-23

申请人： Lawrence Chung-Lai Lei ,  Ilya Perlov ,  Karl Anthony Littau ,  Alan Ferris Morrison ,  Mei Chang ,  Ashok K. Sinha

发明人： Lawrence Chung-Lai Lei ,  Ilya Perlov ,  Karl Anthony Littau ,  Alan Ferris Morrison ,  Mei Chang ,  Ashok K. Sinha

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

公开(公告)号：US6103014A

公开(公告)日：2000-08-15

申请号：US605809

申请日：1996-02-23

申请人： Lawrence Chung-Lai Lei ,  Ilya Perlov ,  Karl Anthony Littau ,  Alan Ferris Morrison ,  Mei Chang ,  Ashok K. Sinha

发明人： Lawrence Chung-Lai Lei ,  Ilya Perlov ,  Karl Anthony Littau ,  Alan Ferris Morrison ,  Mei Chang ,  Ashok K. Sinha

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687 ,  C23C16/00

CPC分类号： C23C16/45519 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H01L21/68792 ,  Y10S438/935

摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

摘要翻译： 公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。 用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。 吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。 在加工过程中，真空进料管将基板安装到基座板上。 耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。 排气泵板改善了来自腔室的废气排出的均匀性。