公开(公告)号：US07566181B2

公开(公告)日：2009-07-28

申请号：US10933028

申请日：2004-09-01

申请人： Wenge Yang ,  Alan Nolet

发明人： Wenge Yang ,  Alan Nolet

IPC分类号： G03D5/00 ,  G03C5/00 ,  H01L21/00 ,  G03F7/00

CPC分类号： G03F7/30 ,  H01L22/12

摘要： In semiconductor processing, the critical dimensions of structures formed on a wafer are controlled by first developing photoresist on top of a film layer on a wafer using a developer tool, the photoresist development being a function of developer tool process variables including temperature and length of time of development. After developing the photoresist, one or more etching steps are performed on the film layer on the wafer using an etch tool. After the one or more etching steps are performed, critical dimensions of structures at a plurality of locations on the wafer are measured using an optical metrology tool. After the critical dimensions are measured, one or more of the developer tool process variables are adjusted based on the critical dimensions of structures measured at the plurality of locations on the wafer.

摘要翻译： 在半导体处理中，通过使用显影剂工具在晶片上的薄膜层的顶部上首先显影光刻胶来控制在晶片上形成的结构的关键尺寸，光致抗蚀剂显影是显影剂工具过程变量的函数，包括温度和时间长度 的发展。 在显影光致抗蚀剂之后，使用蚀刻工具在晶片上的膜层上执行一个或多个蚀刻步骤。 在执行一个或多个蚀刻步骤之后，使用光学测量工具测量晶片上多个位置处的结构的临界尺寸。 在测量临界尺寸之后，基于在晶片上的多个位置处测量的结构的临界尺寸来调整一个或多个显影剂工具过程变量。

公开(公告)号：US07444196B2

公开(公告)日：2008-10-28

申请号：US11408744

申请日：2006-04-21

申请人： Steven Scheer ,  Alan Nolet ,  Manuel Madriaga

发明人： Steven Scheer ,  Alan Nolet ,  Manuel Madriaga

IPC分类号： G06F19/00 ,  G01B11/14 ,  G01R31/26 ,  H01L21/66

CPC分类号： G01N21/4788 ,  G03F7/70625

摘要： A patterned structure in a wafer is created using one or more fabrication treatment processes. The patterned structure has a treated and an untreated portion. One or more diffraction sensitivity enhancement techniques are applied to the structure, the one or more diffraction sensitivity enhancement techniques adjusting one or more properties of the patterned structure to enhance diffraction contrast between the treated portion and untreated portions. A first diffraction signal is measured off an unpatterned structure on the wafer using an optical metrology device. A second diffraction signal is measured off the patterned structure on the wafer using the optical metrology device. One or more diffraction sensitivity enhancement techniques are selected based on comparisons of the first and second diffraction signals.

摘要翻译： 使用一个或多个制造处理工艺制造晶片中的图案化结构。 图案化结构具有经处理和未处理的部分。 将一种或多种衍射灵敏度增强技术应用于该结构，一种或多种衍射灵敏度增强技术调节图案化结构的一个或多个性质以增强经处理部分和未处理部分之间的衍射对比度。 使用光学测量装置从晶片上的未图案化结构测量第一衍射信号。 使用光学测量装置从晶片上的图案化结构测量第二衍射信号。 基于第一和第二衍射信号的比较来选择一种或多种衍射灵敏度增强技术。

公开(公告)号：US20060046166A1

公开(公告)日：2006-03-02

申请号：US10933028

申请日：2004-09-01

申请人： Wenge Yang ,  Alan Nolet

发明人： Wenge Yang ,  Alan Nolet

IPC分类号： G03C5/00

CPC分类号： G03F7/30 ,  H01L22/12

摘要： In semiconductor processing, the critical dimensions of structures formed on a wafer are controlled by first developing photoresist on top of a film layer on a wafer using a developer tool, the photoresist development being a function of developer tool process variables including temperature and length of time of development. After developing the photoresist, one or more etching steps are performed on the film layer on the wafer using an etch tool. After the one or more etching steps are performed, critical dimensions of structures at a plurality of locations on the wafer are measured using an optical metrology tool. After the critical dimensions are measured, one or more of the developer tool process variables are adjusted based on the critical dimensions of structures measured at the plurality of locations on the wafer.

公开(公告)号：US20090011679A1

公开(公告)日：2009-01-08

申请号：US12141876

申请日：2008-06-18

申请人： Rajeev Bajaj ,  Alan Nolet

发明人： Rajeev Bajaj ,  Alan Nolet

IPC分类号： B24D11/00 ,  B24B1/00

CPC分类号： B24B37/26

摘要： A polishing pad includes a plurality of polishing surfaces, a first group of the polishing surfaces made of a first material having a first coefficient of friction and a second group of the polishing surfaces made of a second material having a second coefficient of friction. The first and second groups of polishing surfaces may be arranged over the polishing pad so as to provide a non-planar material removal profile. The polishing surface layout may be designed by evaluating a material removal profile for an existing polishing pad of known characteristics, observing how variations in polishing surface densities and/or coefficients of friction affect that material removal profile, and then mapping the polishing surface coefficients of friction and density profiles to the subject polishing pad layout.

摘要翻译： 抛光垫包括多个抛光表面，由具有第一摩擦系数的第一材料制成的第一组抛光表面和由具有第二摩擦系数的第二材料制成的第二组抛光表面。 第一组和第二组抛光表面可以布置在抛光垫上方，以便提供非平面材料去除轮廓。 可以通过评估已知特征的现有抛光垫的材料去除轮廓来设计抛光表面布局，观察抛光表面密度和/或摩擦系数的变化如何影响材料去除曲线，然后映射抛光表面摩擦系数 以及与主体抛光垫布局的密度分布。

公开(公告)号：US07515282B2

公开(公告)日：2009-04-07

申请号：US11173198

申请日：2005-07-01

申请人： Shifang Li ,  Vi Vuong ,  Alan Nolet ,  Junwei Bao

发明人： Shifang Li ,  Vi Vuong ,  Alan Nolet ,  Junwei Bao

IPC分类号： G01B11/14

CPC分类号： G01B11/24 ,  G03F7/70625

摘要： The profile of a structure having a region with a spatially varying property is modeled using an optical metrology model. A set of profile parameters is defined for the optical metrology model to characterize the profile of the structure. A set of layers is defined for a portion the optical metrology model that corresponds to the region of the structure with the spatially varying property, each layer having a defined height and width. For each layer, a mathematic function that varies across at least a portion of the width of the layer is defined to characterize the spatially varying property within a corresponding layer in the region of the structure.

摘要翻译： 使用光学测量模型对具有空间变化特性的区域的结构的轮廓进行建模。 为光学测量模型定义了一组轮廓参数，以表征结构轮廓。 对于与具有空间变化性质的结构区域对应的光学计量学模型的一部分定义了一组层，每层具有限定的高度和宽度。 对于每个层，在层的宽度的至少一部分上变化的数学函数被定义为表征结构区域中相应层内的空间变化特性。

公开(公告)号：US20070250200A1

公开(公告)日：2007-10-25

申请号：US11408744

申请日：2006-04-21

申请人： Steven Scheer ,  Alan Nolet ,  Manuel Madriaga

发明人： Steven Scheer ,  Alan Nolet ,  Manuel Madriaga

IPC分类号： G06F19/00

CPC分类号： G01N21/4788 ,  G03F7/70625

摘要： A patterned structure in a wafer is created using one or more fabrication treatment processes. The patterned structure has a treated and an untreated portion. One or more diffraction sensitivity enhancement techniques are applied to the structure, the one or more diffraction sensitivity enhancement techniques adjusting one or more properties of the patterned structure to enhance diffraction contrast between the treated portion and untreated portions. A first diffraction signal is measured off an unpatterned structure on the wafer using an optical metrology device. A second diffraction signal is measured off the patterned structure on the wafer using the optical metrology device. One or more diffraction sensitivity enhancement techniques are selected based on comparisons of the first and second diffraction signals.

摘要翻译： 使用一个或多个制造处理工艺制造晶片中的图案化结构。 图案化结构具有经处理和未处理的部分。 将一种或多种衍射灵敏度增强技术应用于该结构，一种或多种衍射灵敏度增强技术调整图案化结构的一个或多个性质以增强经处理部分和未处理部分之间的衍射对比度。 使用光学测量装置从晶片上的未图案化结构测量第一衍射信号。 使用光学测量装置从晶片上的图案化结构测量第二衍射信号。 基于第一和第二衍射信号的比较来选择一种或多种衍射灵敏度增强技术。

公开(公告)号：US20070002337A1

公开(公告)日：2007-01-04

申请号：US11173198

申请日：2005-07-01

申请人： Shifang Li ,  Vi Vuong ,  Alan Nolet ,  Junwei Bao

发明人： Shifang Li ,  Vi Vuong ,  Alan Nolet ,  Junwei Bao

IPC分类号： G01B11/14

CPC分类号： G01B11/24 ,  G03F7/70625

摘要： The profile of a structure having a region with a spatially varying property is modeled using an optical metrology model. A set of profile parameters is defined for the optical metrology model to characterize the profile of the structure. A set of layers is defined for a portion the optical metrology model that corresponds to the region of the structure with the spatially varying property, each layer having a defined height and width. For each layer, a mathematic function that varies across at least a portion of the width of the layer is defined to characterize the spatially varying property within a corresponding layer in the region of the structure.

摘要翻译： 使用光学测量模型对具有空间变化特性的区域的结构的轮廓进行建模。 为光学测量模型定义了一组轮廓参数，以表征结构轮廓。 对于与具有空间变化性质的结构区域对应的光学计量学模型的一部分定义了一组层，每层具有限定的高度和宽度。 对于每个层，在层的宽度的至少一部分上变化的数学函数被定义为表征结构区域中相应层内的空间变化特性。