摘要:
A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)≦0.3, and where the content is measured in atomic percent.
摘要:
A method of making a photovoltaic device includes providing a first photovoltaic cell, placing a conductive interconnect in contact with an upper surface of the first photovoltaic cell, providing a thermoset adhesive over the conductive interconnect and over the upper surface of the first photovoltaic cell, and applying a current or voltage to the conductive interconnect to cure the thermoset adhesive such that the cured thermoset adhesive bonds the conductive interconnect to the upper surface of the first photovoltaic cell. The system used to make the device includes a conveyor, a wire applicator, a thermoset adhesive reservoir, a pressure roller in fluid communication with the reservoir, and first and second electrode rollers configured to apply a current or voltage to the conductive wire interconnect.
摘要:
Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In one embodiment, material including an absorber layer is scribed using an infrared laser source and a picosecond pulse width.
摘要:
Provided herein are improved methods of laser scribing photovoltaic structures to form monolithically integrated photovoltaic modules. The methods involve forming P1, P2 or P3 scribes by an ablative scribing mechanism having low melting, and in certain embodiments, substantially no melting. In certain embodiments, the methods involve generating an ablation shockwave at an interface of the film to be removed and the underlying layer. The film is then removed by mechanical shock. According to various embodiments, the ablation shockwave is generated by using a laser beam having a wavelength providing an optical penetration depth on the order of the film thickness and a minimum threshold intensity. In some embodiments, photovoltaic materials can be scribed using picosecond pulse widths and certain wavelength and laser fluence levels.