公开(公告)号：US4107564A

公开(公告)日：1978-08-15

申请号：US579227

申请日：1975-05-20

Applicant: Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

Inventor： Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

IPC: H01J9/233 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/00 ,  H01J39/00 ,  H01J39/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemitter sensitive in the optical range of wavelengths comprises, according to the invention, a substrate made from p-type semiconductor materials of a group of chemical compounds A.sup.II B.sup.IV C.sub.2.sup.V, where A.sup.II are elements belonging to the second subgroup of group II: zinc and cadmium, B.sup.IV are elements belonging to the second subgroup of group IV: germanium, silicon and tin, C.sub.2.sup.V are elements belonging to the second subgroup of group V: phosphorus and arsenic, and a coating of cesium and oxygen. Homogeneity of the bulk and surface properties of the emitter substrate provides high sensitivity in the near-threshold region of photosensitivity corresponding to the width of the forbidden band of the photoemitter substrate.

Abstract translation: 根据本发明，在波长的光学范围内敏感的光电探测器包括由一组化合物AIIBIVC2V的p型半导体材料制成的衬底，其中AII是属于第二组的第二亚组的元素：锌和镉， BIV是属于第IV组第二亚组的元素：锗，硅和锡，C2V是属于第V族第二亚组的元素：磷和砷，以及铯和氧的涂层。 发射极衬底的体积和表面性质的均匀性在对应于光发射器衬底的禁带的宽度的光敏性的近阈值区域中提供高灵敏度。