Large area semiconductor on glass insulator
    2.
    发明授权
    Large area semiconductor on glass insulator 失效
    玻璃绝缘子大面积半导体

    公开(公告)号:US07691730B2

    公开(公告)日:2010-04-06

    申请号:US11517908

    申请日:2006-09-08

    IPC分类号: H01L21/36

    CPC分类号: H01L21/76254

    摘要: Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers.

    摘要翻译: 方法和装置提供使多个施主半导体晶片的相应第一表面与玻璃基板接触; 使用电解将多个施主半导体晶片的第一表面与玻璃基板接合; 将所述多个施主半导体晶片与所述玻璃基板分离,留下结合到所述玻璃基板的各剥离层; 以及在剥离层的暴露表面上沉积另外的半导体层以增加剥离层的厚度。

    DEVICES AND METHODS FOR RADIATION ASSISTED CHEMICAL PROCESSING
    3.
    发明申请
    DEVICES AND METHODS FOR RADIATION ASSISTED CHEMICAL PROCESSING 审中-公开
    辐射辅助化学处理装置和方法

    公开(公告)号:US20100247401A1

    公开(公告)日:2010-09-30

    申请号:US12744431

    申请日:2008-11-25

    IPC分类号: B01J19/08 B05D7/22

    摘要: Disclosed is a device for performing radiation assisted chemical processing including a fluid path, defined at least in part by a first surface of a wall transparent to radiation useful for performing radiation assisted chemical processing, and a gas discharge or plasma chamber arranged for producing the radiation, wherein the chamber is defined at least in part by a second surface of the transparent wall, opposite the first A related method of forming a photocatalytic reactor comprises among other steps the step of wash-coating the fluid path so as to deposit a photocatalytic material therein, wherein the step of wash-coating includes depositing, and not depositing or removing photocatalytic mateπal, respectively, on a first portion or from a second portion of the of non-circular cross section of the path, the second portion including at least some of the first surface of the wall of transparent material

    摘要翻译: 公开了一种用于执行辐射辅助化学处理的装置,其包括流体路径,该流体路径至少部分地由对用于进行辐射辅助化学处理的辐射透明的壁的第一表面以及被布置用于产生辐射的气体放电或等离子体室 ,其中所述室至少部分地由所述透明壁的第二表面限定,与形成光催化反应器的第一A相关方法相反,包括以下步骤:洗涤涂布流体路径以沉积光催化材料的步骤 其中,所述洗涤步骤包括沉积并且不沉积或除去光催化剂配合物分别在所述路径的非圆形横截面的第一部分或第二部分上,所述第二部分包括在 至少一些透明材料墙的第一表面

    LARGE AREA SEMICONDUCTOR ON GLASS INSULATOR
    4.
    发明申请
    LARGE AREA SEMICONDUCTOR ON GLASS INSULATOR 审中-公开
    玻璃绝缘子上的大面积半导体

    公开(公告)号:US20100112784A1

    公开(公告)日:2010-05-06

    申请号:US12652965

    申请日:2010-01-06

    IPC分类号: H01L21/762

    CPC分类号: H01L21/76254

    摘要: Methods and apparatus provide for contacting respective first surfaces of a plurality of donor semiconductor wafers with a glass substrate; bonding the first surfaces of the plurality of donor semiconductor wafers to the glass substrate using electrolysis; separating the plurality of donor semiconductor wafers from the glass substrate leaving respective exfoliation layers bonded to the glass substrate; and depositing a further semiconductor layer on exposed surfaces of the exfoliation layers to augment a thickness of the exfoliation layers.

    摘要翻译: 方法和装置提供使多个施主半导体晶片的相应第一表面与玻璃基板接触; 使用电解将多个施主半导体晶片的第一表面与玻璃基板接合; 将所述多个施主半导体晶片与所述玻璃基板分离,留下结合到所述玻璃基板的各剥离层; 以及在剥离层的暴露表面上沉积另外的半导体层以增加剥离层的厚度。