公开(公告)号：US09523157B2

公开(公告)日：2016-12-20

申请号：US14126449

申请日：2012-05-17

申请人： Mikhail Yurievich Pogorelsky ,  Alexei Petrovich Shkurko ,  Alexei Nikolaevich Alexeev ,  Viktor Petrovich Chaly

发明人： Mikhail Yurievich Pogorelsky ,  Alexei Petrovich Shkurko ,  Alexei Nikolaevich Alexeev ,  Viktor Petrovich Chaly

IPC分类号： C30B25/08 ,  C30B25/18 ,  C30B23/02 ,  C23C14/24 ,  C30B29/38 ,  C30B29/40 ,  C30B25/14

CPC分类号： C30B25/186 ,  C23C14/243 ,  C30B23/02 ,  C30B25/08 ,  C30B25/14 ,  C30B29/38 ,  C30B29/403

摘要： The invention relates to the technology for producing three-dimensional monocrystals and can preferably be used in optoelectronics for manufacturing substrates for various optoelectronic devices, including light-emitting diodes that emit light in the ultraviolet region. The method for growing an AlN monocrystal by gas-phase epitaxy from a mixture containing a source of Al and NH3 comprises arranging the Al source and a substrate, with the growth surface of said substrate turned towards said Al source, opposite one another in a growth chamber, said source and substrate forming a growth zone, producing a flow of NH3 in the growth zone; and heating the Al source and the substrate to temperatures that ensure the growth of the AlN monocrystal on the substrate. The Al source used is only free Al, the substrate is pretreated with Ga and/or In, whereupon the Al source is cooled to a temperature of 800-900° C. and the substrate is annealed by being heated to a temperature of 1300-1400° C. with subsequent cooling of said substrate to the nitriding temperature of the growth surface of said substrate. The invention ensures a reduction in the extent of flaws in the AlN monocrystal being grown.

摘要翻译： 本发明涉及三维单晶的制造技术，可以优选用于制造用于各种光电器件的衬底的光电子器件，包括在紫外区发射光的发光二极管。 通过气相外延从含有Al和NH 3源的混合物生长AlN单晶的方法包括设置Al源和衬底，其中所述衬底的生长表面朝着所述Al源转动，在生长中彼此相对 所述源和底物形成生长区，在生长区中产生NH 3流; 并将Al源和衬底加热至确保衬底上AlN单晶生长的温度。 所使用的Al源仅为游离Al，基底用Ga和/或In预处理，于是Al源被冷却至800-900℃的温度，并且通过加热至1300℃的温度对基底进行退火， 随后将所述衬底冷却至所述衬底的生长表面的氮化温度。 本发明确保生长的AlN单晶中的缺陷程度的降低。

公开(公告)号：US20140331918A1

公开(公告)日：2014-11-13

申请号：US14126449

申请日：2012-05-17

申请人： Mikhail Yurievich Pogorelsky ,  Alexei Petrovich Shkurko ,  Alexei Nikolaevich Alexeev ,  Viktor Petrovich Chaly

发明人： Mikhail Yurievich Pogorelsky ,  Alexei Petrovich Shkurko ,  Alexei Nikolaevich Alexeev ,  Viktor Petrovich Chaly

IPC分类号： C30B25/18 ,  C30B29/40 ,  C30B25/08

CPC分类号： C30B25/186 ,  C23C14/243 ,  C30B23/02 ,  C30B25/08 ,  C30B25/14 ,  C30B29/38 ,  C30B29/403

摘要： The invention relates to the technology for producing three-dimensional monocrystals and can preferably be used in optoelectronics for manufacturing substrates for various optoelectronic devices, including light-emitting diodes that emit light in the ultraviolet region. The method for growing an AlN monocrystal by gas-phase epitaxy from a mixture containing a source of Al and NH3 comprises arranging the Al source and a substrate, with the growth surface of said substrate turned towards said Al source, opposite one another in a growth chamber, said source and substrate forming a growth zone, producing a flow of NH3 in the growth zone; and heating the Al source and the substrate to temperatures that ensure the growth of the AlN monocrystal on the substrate. The Al source used is only free Al, the substrate is pretreated with Ga and/or In, whereupon the Al source is cooled to a temperature of 800-900° C. and the substrate is annealed by being heated to a temperature of 1300-1400° C. with subsequent cooling of said substrate to the nitriding temperature of the growth surface of said substrate. The invention ensures a reduction in the extent of flaws in the AlN monocrystal being grown.

摘要翻译： 本发明涉及三维单晶的制造技术，可以优选用于制造用于各种光电器件的衬底的光电子器件，包括在紫外区发射光的发光二极管。 通过气相外延从含有Al和NH 3源的混合物生长AlN单晶的方法包括设置Al源和衬底，其中所述衬底的生长表面朝着所述Al源转动，在生长中彼此相对 所述源和底物形成生长区，在生长区中产生NH 3流; 并将Al源和衬底加热至确保衬底上AlN单晶生长的温度。 所使用的Al源仅为游离Al，基底用Ga和/或In预处理，于是Al源被冷却至800-900℃的温度，并且通过加热至1300℃的温度对基底进行退火， 随后将所述衬底冷却至所述衬底的生长表面的氮化温度。 本发明确保生长的AlN单晶中的缺陷程度的降低。