公开(公告)号：US20060081873A1

公开(公告)日：2006-04-20

申请号：US11243469

申请日：2005-10-04

申请人： Andrei Osinsky ,  Jianwei Dong ,  Mohammed Kauser ,  Brian Hertog ,  Amir Dabiran

发明人： Andrei Osinsky ,  Jianwei Dong ,  Mohammed Kauser ,  Brian Hertog ,  Amir Dabiran

IPC分类号： H01L29/732

CPC分类号： H01L33/28 ,  H01L33/14

摘要： A heterostructure semiconductor device capable of emitting electromagnetic radiation and having a junction with opposite conductivity type materials on either side thereof supported on a substrate with an active layer therebetween comprising zinc oxide and having a band gap energy that is less than that of either of the opposite conductivity type materials.

摘要翻译： 一种异质结构半导体器件，其能够发射电磁辐射并且具有在其两侧上具有相反导电类型材料的接合部，该接合部被支撑在衬底上，其间包含氧化锌并且具有小于相反 导电型材料。