公开(公告)号：US11948795B2

公开(公告)日：2024-04-02

申请号：US17052889

申请日：2019-12-09

申请人： IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

发明人： Myung Mo Sung ,  Lynn Lee ,  Jin Won Jung ,  Jong Chan Kim

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C30B25/02 ,  C30B29/16 ,  H01L21/30 ,  H01L29/04 ,  H01L29/20 ,  H01L29/22 ,  H01L29/786 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32

CPC分类号： H01L21/0262 ,  C23C16/407 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/30 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/78696 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32

摘要： Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.

公开(公告)号：US11740495B2

公开(公告)日：2023-08-29

申请号：US16697650

申请日：2019-11-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Tae Gon Kim ,  Garam Park ,  Jooyeon Ahn ,  Shang Hyeun Park ,  Shin Ae Jun

IPC分类号： G02F1/017 ,  B82Y20/00 ,  C09K11/88 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  C09K11/02 ,  C09K11/08 ,  C09K11/62 ,  H10K50/115

CPC分类号： G02F1/01716 ,  B82Y20/00 ,  C09K11/02 ,  C09K11/025 ,  C09K11/0811 ,  C09K11/0883 ,  C09K11/62 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01L33/34 ,  H10K50/115 ,  G02F1/01791

摘要： A quantum dot including a core and a shell disposed on the core wherein one of the core and the shell includes a first semiconductor nanocrystal including zinc and sulfur and the other of the core and the shell includes a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, the first semiconductor nanocrystal further includes a metal and a halogen configured to act as a Lewis acid in a halide form, an amount of the metal is greater than or equal to about 10 mole percent (mol %) based on a total number of moles of sulfur, and an amount of the halogen is greater than or equal to about 10 mol % based on a total number of moles of sulfur, a method of producing the same, and a composite and an electronic device including the same.

公开(公告)号：US20230268471A1

公开(公告)日：2023-08-24

申请号：US18307015

申请日：2023-04-26

申请人： NICHIA CORPORATION

发明人： Masakatsu TOMONARI ,  Masahiko SANO

IPC分类号： H01L33/54 ,  H01L33/60 ,  H01L33/58 ,  H01L33/46 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/62 ,  H01L33/64

CPC分类号： H01L33/54 ,  H01L33/60 ,  H01L33/58 ,  H01L33/46 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/0753 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/502 ,  H01L33/62 ,  H01L33/647 ,  H01L33/642 ,  H01L33/486

摘要： A light emitting device including a first light emitting element and an optical member disposed over the first light emitting element. The optical member includes a light transmissive member and a ceramic component. The light transmissive member has a first upper surface, a second upper surface, and a lower surface opposing to the first upper surface and a second upper surface. The ceramic component is disposed on the second upper surface of the light transmissive member. The light transmissive member and the ceramic component each has a portion that overlaps with the first light emitting element when viewed in plan view.

公开(公告)号：US20190259913A1

公开(公告)日：2019-08-22

申请号：US15751264

申请日：2017-11-02

申请人： LG INNOTEK CO., LTD.

发明人： Kwang Sun BAEK ,  Jong Ho NA ,  Dae Seob HAN ,  Jung Hyun HWANG

IPC分类号： H01L33/32 ,  H01L33/06

CPC分类号： H01L33/02 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32

摘要： Disclosed herein is a semiconductor device. The semiconductor device includes a substrate, a first conductive type semiconductor layer disposed over the substrate, an active layer disposed over the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed over the active layer. The first conductive type semiconductor layer includes a first layer, a second layer and a third layer having different composition ratios of indium (In). The first semiconductor layer is disposed close to the active layer. The second semiconductor layer is disposed under the first semiconductor layer. The third semiconductor layer is disposed under the second semiconductor layer. In content is reduced from the active layer to the third semiconductor layer, and In content of the third semiconductor layer may be 5% or more to 10% or less of that of the active layer.

公开(公告)号：US20190043717A1

公开(公告)日：2019-02-07

申请号：US16057801

申请日：2018-08-07

申请人： COMSATS Institute of Information Technology (CIIT)

发明人： Arshad Saleem BHATTI ,  Uzma NOSHEEN ,  Liaquat AZIZ ,  Nashmia SABIH

IPC分类号： H01L21/02 ,  H01L33/28 ,  H01L33/00

CPC分类号： H01L21/02474 ,  H01L21/02381 ,  H01L21/02557 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02664 ,  H01L33/0095 ,  H01L33/28

摘要： According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.

公开(公告)号：US20180212202A1

公开(公告)日：2018-07-26

申请号：US15329352

申请日：2016-05-18

申请人： Boe Technologies Group Co., Ltd.

发明人： Jiuxia Yang ,  Feng Bai

IPC分类号： H01L51/52 ,  H01L51/50 ,  H01L33/06 ,  H01L33/00 ,  H01L51/56

CPC分类号： H01L51/5293 ,  C09K11/02 ,  C09K11/883 ,  H01L33/0083 ,  H01L33/06 ,  H01L33/28 ,  H01L51/0037 ,  H01L51/502 ,  H01L51/5036 ,  H01L51/56

摘要： The present disclosure provides a quantum rod, a method of manufacturing a quantum rod and a display panel, wherein the quantum rod comprises a core and a shell covering the core, and the core and/or the shell is further covered with a conductive material layer.

公开(公告)号：US20180211919A1

公开(公告)日：2018-07-26

申请号：US15875735

申请日：2018-01-19

申请人： EPISTAR CORPORATION

发明人： Yung-Chung PAN ,  Chang-Yu TSAI ,  Ching-Chung HU ,  Ming-Pao CHEN ,  Chi SHEN ,  Wei-Chieh LIEN

IPC分类号： H01L23/532 ,  H01L21/02 ,  H01L21/285 ,  H01L33/28 ,  H01L33/12 ,  H01L21/768 ,  H01L31/0304 ,  H01L33/32 ,  H01L29/205

CPC分类号： H01L23/53223 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/28575 ,  H01L21/76846 ,  H01L29/205 ,  H01L31/03042 ,  H01L31/03046 ,  H01L33/04 ,  H01L33/12 ,  H01L33/28 ,  H01L33/32

摘要： A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

公开(公告)号：US10014437B2

公开(公告)日：2018-07-03

申请号：US15452543

申请日：2017-03-07

申请人： IMEC VZW ,  Katholieke Universiteit Leuven, KU Leuven R&D

发明人： Hugo Bender ,  Yang Qiu

IPC分类号： H01L33/00 ,  H01L29/06 ,  H01L33/18 ,  H01L33/34 ,  H01L31/036 ,  H01L31/18 ,  H01L33/28 ,  H01L33/08 ,  H01L31/028 ,  H01L31/0352 ,  H01L33/24 ,  H01L21/02 ,  H01L21/762

CPC分类号： H01L33/0095 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/036 ,  H01L31/1804 ,  H01L31/1864 ,  H01L33/0054 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/28 ,  H01L33/34

摘要： An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This semiconductor material can contain silicon. A method for manufacturing the optical semiconductor device comprises annealing the sidewalls of the fin, thereby inducing a stress gradient along the width of the fin.

公开(公告)号：US20180151774A1

公开(公告)日：2018-05-31

申请号：US15858887

申请日：2017-12-29

申请人： LUMEOVA, INC.

发明人： Mohammad Ali Khatibzadeh ,  Arunesh Goswami

IPC分类号： H01L33/06 ,  H04B10/116 ,  H04B10/114

CPC分类号： H01L33/14 ,  H01L25/167 ,  H01L27/156 ,  H01L31/167 ,  H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/145 ,  H01L33/28 ,  H01L33/30 ,  H04B10/11 ,  H04B10/1143 ,  H04B10/1149 ,  H04B10/116 ,  H04B10/40 ,  H04B10/502 ,  H04B10/60 ,  H04H20/71

摘要： Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a light-emitting diode (LED) includes a substrate, a carrier confinement (CC) region positioned over the substrate, and an active region positioned over the CC region. The CC region includes a first CC layer comprising indium gallium phosphide and a second CC layer positioned over the first CC layer. The second CC layer includes gallium arsenide phosphide. The active region is configured to have a transient response time of less than 500 picoseconds (ps).

公开(公告)号：US09935240B2

公开(公告)日：2018-04-03

申请号：US14101867

申请日：2013-12-10

申请人： Geoffrey J. S. Supran ,  Katherine W. Song ,  Gyuweon Hwang ,  Raoul Emile Correa ,  Yasuhiro Shirasaki ,  Moungi G. Bawendi ,  Vladimir Bulovic ,  Jennifer Scherer

发明人： Geoffrey J. S. Supran ,  Katherine W. Song ,  Gyuweon Hwang ,  Raoul Emile Correa ,  Yasuhiro Shirasaki ,  Moungi G. Bawendi ,  Vladimir Bulovic ,  Jennifer Scherer

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L33/28 ,  H01L51/42 ,  H01L31/055 ,  H01L21/02 ,  H01L31/0352 ,  H01L51/50

CPC分类号： H01L33/28 ,  H01L21/02601 ,  H01L31/035218 ,  H01L31/055 ,  H01L51/426 ,  H01L51/5008 ,  H01L51/502

摘要： A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 μm. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.